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32 条记录 (耗时 0.038 秒)

    Method for fabricating a semiconductor device
    23.
    发明申请
    Method for fabricating a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US20060172474A1

    公开(公告)日：2006-08-03

    申请号：US11045124

    申请日：2005-01-31

    申请人： Cory Wajda ,  Gert Leusink

    发明人： Cory Wajda ,  Gert Leusink

    IPC分类号： H01L21/84 ,  H01L21/26 ,  H01L21/425

    CPC分类号： H01L21/02321 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/0234 ,  H01L21/28079 ,  H01L21/316 ,  H01L29/495

    摘要： A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.

    摘要翻译： 一种在制造半导体器件中处理栅叠层的方法，其特征在于，提供一种基板，该基板含有形成在基板上的电介质层的栅叠层和形成在高k电介质层上的含金属的栅电极层， 来自等离子体中的工艺气体的能量激发的掺杂剂物质，并且将栅极堆叠暴露于激发的掺杂物种类以将掺杂剂掺入到栅极堆叠中。 该方法可用于调整栅极堆叠的功能。

    Method of forming a gate stack containing a gate dielectric layer having reduced metal content
    25.
    发明授权
    Method of forming a gate stack containing a gate dielectric layer having reduced metal content 失效
    形成包含具有降低的金属含量的栅极电介质层的栅极堆叠的方法

    公开(公告)号：US07470591B2

    公开(公告)日：2008-12-30

    申请号：US11239321

    申请日：2005-09-30

    申请人： David L. O'Meara ,  YoungJong Lee ,  Cory Wajda

    发明人： David L. O'Meara ,  YoungJong Lee ,  Cory Wajda

    IPC分类号： H01L21/00

    CPC分类号： H01L21/28194 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31122 ,  H01L29/517 ,  H01L29/78

    摘要： A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.

    摘要翻译： 提供了一种用于降低金属含量并控制栅叠层中的栅介质层的金属深度分布的方法。 该方法包括在处理室中提供衬底，在衬底上沉积栅极电介质层，其中栅极电介质层包括金属元素。 从栅介质层的至少一部分选择性地蚀刻金属元件，以形成具有降低的金属含量的蚀刻栅极电介质层，并且在蚀刻的栅极介电层上形成栅极电极层。

    PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS
    26.
    发明申请
    PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS 审中-公开
    含金属薄膜的脉冲化学气相沉积

    公开(公告)号：US20110065287A1

    公开(公告)日：2011-03-17

    申请号：US12557771

    申请日：2009-09-11

    申请人： Cory Wajda

    发明人： Cory Wajda

    IPC分类号： H01L21/314

    CPC分类号： H01L21/02148 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31645

    摘要： A method is provided for forming a metal-silicon-containing film on a substrate by pulsed chemical vapor deposition. The method includes providing the substrate in a process chamber, maintaining the substrate at a temperature suited for chemical vapor deposition of a metal-silicon-containing film by thermal decomposition of a metal-containing gas and a silicon-containing gas on the substrate, exposing the substrate to a continuous flow of the metal-containing gas, and during the continuous flow, exposing the substrate to sequential pulses of the silicon-containing gas.

    摘要翻译： 提供了通过脉冲化学气相沉积在基板上形成含金属硅膜的方法。 该方法包括在处理室中提供衬底，通过在衬底上热分解含金属气体和含硅气体，将衬底保持在适于化学气相沉积含金属硅膜的温度，将衬底暴露 该衬底连续流入含金属的气体，并且在连续流动期间，将衬底暴露于含硅气体的顺序脉冲。

    Method of forming high-dielectric constant films for semiconductor devices
    27.
    发明授权
    Method of forming high-dielectric constant films for semiconductor devices 有权
    形成用于半导体器件的高介电常数膜的方法

    公开(公告)号：US07964515B2

    公开(公告)日：2011-06-21

    申请号：US11963150

    申请日：2007-12-21

    申请人： Robert D. Clark ,  Cory Wajda

    发明人： Robert D. Clark ,  Cory Wajda

    IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C14/00 ,  C23C16/00

    CPC分类号： H01L21/3141 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

    摘要： A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.

    摘要翻译： 提供一种用于形成用于半导体器件的高介电常数（高k）膜的方法。 根据一个实施方案，通过交替地和顺序地将基底暴露于金属 - 碳前体和含有臭氧的氧化源的近饱和暴露水平来沉积金属 - 碳 - 氧高k膜。 该方法能够形成具有良好厚度均匀性的金属 - 碳 - 氧高k膜，同时阻碍金属 - 碳 - 氧高k膜和衬底之间的界面层的生长。 根据一个实施例，金属 - 碳 - 氧高k膜可以用氧化工艺处理以从膜去除碳。

    Method and processing system for monitoring status of system components
    28.
    发明授权
    Method and processing system for monitoring status of system components 有权
    监控系统组件状态的方法和处理系统

    公开(公告)号：US07479454B2

    公开(公告)日：2009-01-20

    申请号：US10674703

    申请日：2003-09-30

    申请人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

    发明人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

    摘要： A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

    摘要翻译： 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
    29.
    发明授权
    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation 失效
    使用多频电磁辐射增加薄膜拉伸应力的方法和系统

    公开(公告)号：US07300891B2

    公开(公告)日：2007-11-27

    申请号：US11091755

    申请日：2005-03-29

    申请人： Igeta Masonobu ,  Cory Wajda ,  Gert Leusink

    发明人： Igeta Masonobu ,  Cory Wajda ,  Gert Leusink

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76801 ,  C23C16/345 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

    摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electro-magnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

    摘要翻译： 描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。 薄膜可以是平面薄膜，或非平面薄膜，例如在NMOS栅极上形成的氮化物薄膜。 该薄膜暴露于电磁（EM）辐射，例如波长分量小于约500nm的EM辐射。 EM源可以包括多频辐射源。 另外，为了选择性地处理非平面膜的区域，准直辐射源。

    Method and system for forming a high-k dielectric layer
    30.
    发明申请
    Method and system for forming a high-k dielectric layer 审中-公开
    用于形成高k电介质层的方法和系统

    公开(公告)号：US20060228898A1

    公开(公告)日：2006-10-12

    申请号：US11093261

    申请日：2005-03-30

    申请人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

    发明人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/31691 ,  H01L28/56

    摘要： A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.

    摘要翻译： 一种制备用于衬底上的高k电介质层的界面层的方法。 所述衬底的表面暴露于由紫外线（UV）辐射引起的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基以形成氧化膜。 将氧化膜暴露于通过包含至少一种包含氮的分子组合物的第二工艺气体的等离子体诱导解离而形成的氮自由基以氮化氧化物膜以形成界面层。 在所述界面层上形成高k电介质层。