中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

42 records (took 0.033 seconds)

    CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    21.
    发明申请
    CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
    清洁组合物，清洁工艺和生产半导体器件的方法

    公开(公告)号：US20140135246A1

    公开(公告)日：2014-05-15

    申请号：US14158454

    申请日：2014-01-17

    Applicant: FUJIFILM Corporation

    Inventor： Atsushi MIZUTANI ,  Hideo FUSHIMI ,  Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI

    IPC: H01L21/02

    CPC classification number: H01L21/02076 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02071

    Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.

    Abstract translation: 提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的 羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤 。 还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物， （成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵 化合物，该组合物的pH为5〜10。

    TREATMENT LIQUID, TREATMENT METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
    22.
    发明申请
    TREATMENT LIQUID, TREATMENT METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权

    公开(公告)号：US20250019836A1

    公开(公告)日：2025-01-16

    申请号：US18889891

    申请日：2024-09-19

    Applicant: FUJIFILM Corporation

    Inventor： Kohei HAYASHI ,  Moe NARITA ,  Atsushi MIZUTANI

    IPC: C23F11/12 ,  C23F11/04

    Abstract: An object of the present invention is to provide a treatment liquid that has excellent removability of a metal part and suppressed dissolution of an insulating film in a case of being applied to an object to be treated, including the insulating film and the metal part. The treatment liquid of an embodiment of the present invention includes water, a fluoride source, periodic acid or a salt thereof, and a surfactant, and satisfies at least one of the following requirement A, the following requirement B, or the following requirement C.
    Requirement A: The surfactant includes a cationic surfactant and has a predetermined aliphatic hydrocarbon group, and the cationic surfactant has a molecular weight of 300 or less.
    Requirement B: The surfactant includes an anionic surfactant, the anionic surfactant has a predetermined group, and a mass ratio of a content of the anionic surfactant to a content of the fluoride source is 0.01 to 0.5.
    Requirement C: The surfactant includes a nonionic surfactant, and the nonionic surfactant does not have a fluorine atom and is represented by a predetermined formula.

    CHEMICAL LIQUID AND TREATMENT METHOD
    28.
    发明申请
    CHEMICAL LIQUID AND TREATMENT METHOD 有权

    公开(公告)号：US20230112048A1

    公开(公告)日：2023-04-13

    申请号：US17895534

    申请日：2022-08-25

    Applicant: FUJIFILM Corporation

    Inventor： Atsushi MIZUTANI ,  Yuta SHIGENOI

    IPC: C09K13/06 ,  H01L21/311

    Abstract: A chemical liquid contains phosphoric acid or a salt thereof, a polar aprotic solvent, water, and a compound that has a carboxy group and does not have a hydroxyl group or a salt of the compound, in which a content of the phosphoric acid or a salt thereof is 5.0% by mass or less with respect to a total mass of the chemical liquid, a content of the polar aprotic solvent is 50.0% by mass or more with respect to the total mass of the chemical liquid, and a content of the water is 2.0% by mass or more and less than 50.0% by mass with respect to the total mass of the chemical liquid.

Patent Agency Ranking