公开(公告)号：US20100173495A1

公开(公告)日：2010-07-08

申请号：US12724935

申请日：2010-03-16

申请人： Randhir Thakur ,  Steve G. Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Alexander Brailove ,  Nir Merry ,  Vinay K. Shah ,  Andreas G. Hegedus

发明人： Randhir Thakur ,  Steve G. Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Alexander Brailove ,  Nir Merry ,  Vinay K. Shah ,  Andreas G. Hegedus

IPC分类号： H01L21/302 ,  H01L21/316 ,  H01L21/314 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45593 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67757 ,  H01L21/67781

摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.

摘要翻译： 本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统（例如，集群工具）来处理基板的方法和装置。 在一个实施例中，系统被配置为执行仅包含批处理室的衬底处理序列，或批处理和单个衬底处理室，以优化生产量并且由于暴露于污染环境而最小化处理缺陷。 在一个实施例中，批处理室用于通过执行与在集群工具上执行的衬底处理序列中的其他工艺配方步骤相比不成比例地长的工艺配方步骤来增加系统吞吐量。 在另一个实施方案中，使用两个或更多个间隔室来处理多个基板，使用处理顺序中的一个或多个不成比例的长处理步骤。 本发明的方面还包括用于将前体输送到处理室的装置和方法，使得可以执行可重复的ALD或CVD沉积工艺。

公开(公告)号：US20090205677A1

公开(公告)日：2009-08-20

申请号：US12423760

申请日：2009-04-14

申请人： Randhir Thakur ,  Steven Verhaverbeke ,  J. Kelly Truman

发明人： Randhir Thakur ,  Steven Verhaverbeke ,  J. Kelly Truman

IPC分类号： B08B3/12

CPC分类号： H01L21/67051 ,  B08B3/024 ,  B08B3/12

摘要： A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.

摘要翻译： 一种单晶片清洁装置，其包括可容纳晶片的可旋转托架，具有第一表面张力的冲洗流体，具有低于第一表面张力的第二表面张力的第二流体，能够将冲洗流体施加到第一表面张力的第一喷嘴 位于所述晶片上的位于所述支架中的第一位置，所述第二喷嘴能够在所述晶片上的第二位置处施加所述第二流体，其中所述第二位置在所述第一位置的内侧，并且所述第一喷嘴和所述第二喷嘴能够跨越 晶片将第一位置和第二位置从晶片中心平移到晶片外边缘。

公开(公告)号：US20090172321A1

公开(公告)日：2009-07-02

申请号：US11967987

申请日：2007-12-31

申请人： Roy E. Scheuerlein ,  Randhir Thakur ,  Christopher Moore

发明人： Roy E. Scheuerlein ,  Randhir Thakur ,  Christopher Moore

IPC分类号： G06F12/14 ,  G06F12/02 ,  G06F12/16

CPC分类号： G06F12/0638 ,  G06F11/1415 ,  G06F12/1425 ,  G06F2212/2142

摘要： Methods and apparatus for a solid state non-volatile storage sub-system of a computer is provided. The storage sub-system may include a write-once storage sub-system memory device and a write-many storage sub-system memory device. Numerous other aspects are provided.

摘要翻译： 提供了一种计算机固态非易失性存储子系统的方法和装置。 存储子系统可以包括一次写入存储子系统存储器设备和多写存储子系统存储器设备。 提供了许多其他方面。

公开(公告)号：US20090010626A1

公开(公告)日：2009-01-08

申请号：US12212487

申请日：2008-09-17

申请人： SUNDAR RAMAMURTHY ,  Andreas G. Hegedus ,  Randhir Thakur

发明人： SUNDAR RAMAMURTHY ,  Andreas G. Hegedus ,  Randhir Thakur

IPC分类号： A21B2/00

CPC分类号： H01L21/67103

摘要： A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.

摘要翻译： 提出了一种在处理室内调节传热特性的方法。 可以通过调节设置在处理室中的边缘环的热质量来确定和调整室特性。

公开(公告)号：US20070196011A1

公开(公告)日：2007-08-23

申请号：US11610468

申请日：2006-12-13

申请人： Damon Cox ,  Todd Egan ,  Randhir Thakur ,  Arkadii Samoilov ,  Per-Ove Hansson

发明人： Damon Cox ,  Todd Egan ,  Randhir Thakur ,  Arkadii Samoilov ,  Per-Ove Hansson

IPC分类号： H01L21/66 ,  G06K9/00

CPC分类号： G01N21/33 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67745

摘要： Aspects of the invention generally provide an apparatus and method for processing substrates using a multi-chamber processing system that is adapted to process substrates and analyze the results of the processes performed on the substrate. In one aspect of the invention, one or more analysis steps and/or pre-processing steps are performed on the substrate to provide data for processes performed on subsequent substrates. In one aspect of the invention, a system controller and one or more analysis devices are utilized to monitor and control a process chamber recipe and/or a process sequence to reduce substrate scrap due to defects in the formed device and device performance variability issues. Embodiments of the present invention also generally provide methods and a system for repeatably and reliably forming semiconductor devices used in a variety of applications.

摘要翻译： 本发明的方面通常提供一种使用多室处理系统来处理衬底的装置和方法，所述多室处理系统适于处理衬底并分析在衬底上执行的工艺的结果。 在本发明的一个方面，在衬底上执行一个或多个分析步骤和/或预处理步骤以提供在后续衬底上执行的处理的数据。 在本发明的一个方面，系统控制器和一个或多个分析装置用于监测和控制处理室配方和/或处理顺序，以减少由于所形成的装置中的缺陷和装置性能变异性问题引起的衬底废料。 本发明的实施例还通常提供了用于可重复且可靠地形成用于各种应用的半导体器件的方法和系统。

公开(公告)号：US20060246679A1

公开(公告)日：2006-11-02

申请号：US11425607

申请日：2006-06-21

申请人： Randhir Thakur ,  James Pan

发明人： Randhir Thakur ,  James Pan

IPC分类号： H01L21/20

CPC分类号： H01L28/84 ,  C23C16/045 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L27/10852 ,  H01L28/90 ,  H01L28/91 ,  Y10S438/964

摘要： A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.

摘要翻译： 通过在膜的形成期间流动氯，形成具有增强的选择性的多晶硅膜。 氯作为蚀刻剂，其邻近多晶硅结构的绝缘区域需要形成薄膜。 使用该工艺形成用于电容器的底部电极，随后进行退火以产生半球形晶粒（HSG）多晶硅。 多层电容器容器形成在非氧化环境中，使得在层之间不形成氧化物。 所形成的结构被平坦化以形成由掺杂和未掺杂的非晶硅层制成的分离的容器。 将选定的未掺杂层接种在含氯环境中并退火以形成HSG。 形成电介质层和第二电极以完成电池电容器。

公开(公告)号：US20050279283A1

公开(公告)日：2005-12-22

申请号：US11210607

申请日：2005-08-23

申请人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： C30B33/00 ,  H01L21/316 ,  C23C16/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用，这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US20050009361A1

公开(公告)日：2005-01-13

申请号：US10910229

申请日：2004-08-03

申请人： Scott DeBoer ,  Randhir Thakur

发明人： Scott DeBoer ,  Randhir Thakur

IPC分类号： C23C16/40 ,  C23C16/52 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01L21/31

CPC分类号： H01L21/02183 ,  C23C16/40 ,  C23C16/52 ,  H01L21/02274 ,  H01L21/02356 ,  H01L21/316 ,  H01L21/31691 ,  H01L28/40 ,  H01L29/516

摘要： A method of forming a high dielectric oxide film conventionally formed using a post formation oxygen anneal to reduce the leakage current of such film includes forming a high dielectric oxide film on a surface. The high dielectric oxide film has a dielectric constant greater than about 4 and includes a plurality of oxygen vacancies present during the formation of the film. The high dielectric oxide film is exposed during the formation thereof to an amount of atomic oxygen sufficient for reducing the number of oxygen vacancies and eliminating the post formation oxygen anneal of the high dielectric oxide film. Further, the amount of atomic oxygen used in the formation method may be controlled as a function of the amount of oxygen incorporated into the high dielectric oxide film during the formation thereof or be controlled as a function of the concentration of atomic oxygen in a process chamber in which the high dielectric oxide film is being formed. An apparatus for forming the high dielectric oxide film is also described.

摘要翻译： 使用后形成氧退火形成常规形成的高电介质氧化膜以减少这种膜的漏电流的方法包括在表面上形成高介电氧化物膜。 高电介质氧化物膜具有大于约4的介电常数，并且在膜的形成期间包括存在的多个氧空位。 高电介质氧化物膜在其形成期间暴露于足以减少氧空位数并且消除高电介质氧化物膜的后形成氧退火的原子氧量。 另外，形成方法中使用的原子氧的量可以作为在形成高电介质氧化物膜期间掺入到高电介质氧化膜中的氧的量的函数来控制，或者作为处理室中的原子氧浓度的函数来控制 其中形成高电介质氧化膜。 还描述了用于形成高电介质氧化物膜的装置。

公开(公告)号：US06827790B2

公开(公告)日：2004-12-07

申请号：US09798445

申请日：2001-03-02

申请人： Daniel Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

发明人： Daniel Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

IPC分类号： C23C1600

摘要： a method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, rhodium, nickel, silver, and gold.

公开(公告)号：US06673689B2

公开(公告)日：2004-01-06

申请号：US10159892

申请日：2002-05-30

申请人： Husam N. Al-Shareef ,  Scott DeBoer ,  Randhir Thakur

发明人： Husam N. Al-Shareef ,  Scott DeBoer ,  Randhir Thakur

IPC分类号： H01L2100

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L28/55

摘要： A high surface area capacitor comprising a double metal layer of an electrode metal and a barrier material deposited on hemispherical grain (HSG) silicon and a high dielectric constant (HDC) material deposited over the double metal layer. An upper cell plate electrode is deposited over the HDC material. The double metal layer preferably comprises one noble metal for the electrode metal and an oxidizable metal for the barrier material. The noble metal alone would normally allow oxygen to diffuse into and oxidize any adhesion layer and/or undesirably oxidize any silicon-containing material during the deposition of the HDC material. The barrier metal is used to form a conducting oxide layer or a conducting layer which stops the oxygen diffusion. The HSG polysilicon provides a surface roughness that boosts cell capacitance. The HDC material is also used to boost cell capacitance.

摘要翻译： 一种高表面电容器，包括电极金属的双金属层和沉积在双金属层上沉积的半球形晶粒（HSG）硅和高介电常数（HDC））材料上的阻挡材料。 在HDC材料上沉积上电池板电极。 双金属层优选包含用于电极金属的一种贵金属和用于阻挡材料的可氧化金属。 单独的贵金属通常将允许氧气在HDC材料的沉积期间扩散进入并氧化任何粘附层和/或不期望地氧化任何含硅材料。 阻挡金属用于形成导电氧化物层或阻止氧扩散的导电层。 HSG多晶硅提供了提高电池电容的表面粗糙度。 HDC材料也用于提高电池电容。