公开(公告)号：US08590485B2

公开(公告)日：2013-11-26

申请号：US12767125

申请日：2010-04-26

Applicant: Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

Inventor： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC classification number: H01J37/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H05H1/30

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

Abstract translation: 公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。 与常规ICP源相反，本公开描述了不是圆柱形的ICP源。 相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。 可以定义源的深度以最大化从天线到等离子体的能量传递。 在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。 离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

公开(公告)号：US08545624B2

公开(公告)日：2013-10-01

申请号：US12487058

申请日：2009-06-18

Applicant: Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson

Inventor： Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson

IPC: C30B13/28

CPC classification number: B22D39/02 ,  C30B11/001 ,  C30B11/003 ,  C30B29/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/403 ,  C30B29/60

Abstract: An apparatus to pump a melt is disclosed. The pump has a chamber that defines a cavity configured to hold the melt. A gas source is in fluid communication with the chamber. A first valve is between the chamber and a first pipe and a second valve is between the chamber and a second pipe. The valves may be check valves in one embodiment.

Abstract translation: 公开了一种用于泵送熔体的装置。 泵具有限定被配置为保持熔体的腔的腔室。 气体源与腔室流体连通。 第一阀在腔室和第一管之间，第二阀在腔室和第二管之间。 在一个实施例中，阀可以是止回阀。

公开(公告)号：US08263941B2

公开(公告)日：2012-09-11

申请号：US12616589

申请日：2009-11-11

Applicant: Victor Benveniste ,  James S. Buff ,  Frank Sinclair ,  Joseph C. Olson

Inventor： Victor Benveniste ,  James S. Buff ,  Frank Sinclair ,  Joseph C. Olson

IPC: H01J49/20

CPC classification number: H01J37/05 ,  H01J37/08 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/022 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/083 ,  H01J2237/31705

Abstract: A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.

Abstract translation: 带状光束质量分析仪，具有第一和第二电磁线圈和钢轭装置。 每个电磁线圈具有大致“跑道”结构，其限定了离子带束通过该空间行进的空间。 螺线管线圈沿着带状束的行进方向间隔开。 每个电磁线圈产生均匀的磁场以适应宽带束的质量分辨率，以产生从离子源产生的离子的期望图像。

公开(公告)号：US08129695B2

公开(公告)日：2012-03-06

申请号：US12647950

申请日：2009-12-28

Applicant: Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

Inventor： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

IPC: G21K1/06

CPC classification number: H01J37/3171 ,  H01J37/1477 ,  H01J2237/053 ,  H01J2237/12 ,  H01J2237/24514

Abstract: A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

Abstract translation: 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

公开(公告)号：US20110240876A1

公开(公告)日：2011-10-06

申请号：US12754258

申请日：2010-04-05

Applicant: Frank Sinclair ,  Costel Biloiu ,  Bon-Woong Koo ,  Victor Benveniste ,  Shardul Patel

Inventor： Frank Sinclair ,  Costel Biloiu ,  Bon-Woong Koo ,  Victor Benveniste ,  Shardul Patel

IPC: H01J27/02

CPC classification number: H01J37/32495 ,  H01J27/16 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32522 ,  H01J2237/022 ,  H01J2237/0266 ,  H01J2237/0817

Abstract: An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.

Abstract translation: RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。 当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。 当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

公开(公告)号：US20110155921A1

公开(公告)日：2011-06-30

申请号：US12647950

申请日：2009-12-28

Applicant: Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

Inventor： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

IPC: G21K1/06 ,  H01J3/14

CPC classification number: H01J37/3171 ,  H01J37/1477 ,  H01J2237/053 ,  H01J2237/12 ,  H01J2237/24514

Abstract: A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

Abstract translation: 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

公开(公告)号：US07888653B2

公开(公告)日：2011-02-15

申请号：US12348091

申请日：2009-01-02

Applicant: Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

Inventor： Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

IPC: H01J3/14 ,  H01J49/22 ,  H01J23/083

CPC classification number: H01J37/1471 ,  H01J37/12 ,  H01J37/3171

Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.

Abstract translation: 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。

公开(公告)号：US07816153B2

公开(公告)日：2010-10-19

申请号：US12478513

申请日：2009-06-04

Applicant: Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson ,  Nicholas P. T. Bateman ,  Robert J. Mitchell

Inventor： Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson ,  Nicholas P. T. Bateman ,  Robert J. Mitchell

IPC: H01L21/00

CPC classification number: C30B11/003 ,  C30B11/001 ,  C30B28/06 ,  C30B29/06 ,  C30B29/60

Abstract: A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate.

Abstract translation: 可以由熔体形成无位错的片材。 使用冷却板在材料的熔体上形成具有第一宽度的材料片。 这张纸有位错。 片材相对于冷却板输送，并且位错迁移到片材的边缘。 片材的第一宽度通过冷却板增加到第二宽度。 片材在第二个宽度上不具有位错。 在一种情况下，冷却板可以具有两种不同宽度的形状。 冷却板可以具有在不同温度下操作的段，以在另一种情况下增加片材的宽度。 片材可以相对于冷却板拉动或流动。

公开(公告)号：US20100140077A1

公开(公告)日：2010-06-10

申请号：US12328096

申请日：2008-12-04

Applicant: Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

Inventor： Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

IPC: B01J19/08 ,  C23C16/513

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/24514

Abstract: An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.

Abstract translation: 公开了一种利用离子源和/或原子气体注入的离子源。 在离子束施加中，源气体可以直接使用，如通常提供的。 或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。 这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。 在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。 在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。 在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。 这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

公开(公告)号：US07692139B2

公开(公告)日：2010-04-06

申请号：US11872576

申请日：2007-10-15

Applicant: Bon Woong Koo ,  Frank Sinclair

Inventor： Bon Woong Koo ,  Frank Sinclair

IPC: H01J37/317

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/04 ,  H01J2237/05

Abstract: A system for ion beam neutralization includes a beamguide configured to transport an ion beam through a dipole field, a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The system may further include a charged particle source having one or more apertures configured to inject charged particles into the ion beam. The system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam.

Abstract translation: 用于离子束中和的系统包括被配置为将离子束传送通过偶极场的波导，第一磁体阵列和被配置为产生多尖点磁场的第二磁体阵列，第一磁体阵列位于第一 离子束路径的一侧和第二磁体阵列位于离子束路径的第二侧上。 该系统还可以包括具有一个或多个孔的带电粒子源，所述孔被配置为将带电粒子注入到离子束中。 该系统还可以将一个或多个孔与第一磁体阵列和第二磁体阵列中的至少一个对准，以使来自带电粒子源的注入的带电粒子与一个或多个磁性区域对准，以使有效的带电粒子扩散成 离子束。