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    SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT
    21.
    发明申请
    SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT 有权
    半导体元件的制造方法和半导体元件的制造方法

    公开(公告)号：US20110233721A1

    公开(公告)日：2011-09-29

    申请号：US13156987

    申请日：2011-06-09

    申请人： Andreas Meiser ,  Walter Hartner ,  Hermann Gruber ,  Dietrich Bonart ,  Thomas Gross

    发明人： Andreas Meiser ,  Walter Hartner ,  Hermann Gruber ,  Dietrich Bonart ,  Thomas Gross

    IPC分类号： H01L29/06

    CPC分类号： H01L21/76802 ,  H01L21/76286 ,  H01L21/76877 ,  H01L21/84 ,  H01L27/1203

    摘要： A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.

    摘要翻译： 半导体部件包括半导体本体，其中形成有：第一导电类型的衬底，布置在衬底上的第二导电类型的埋入半导体层，以及布置在埋置的第三导电类型的功能单元半导体层 半导体层，其中设置有横向彼此排列的至少两个半导体功能单元。 掩埋半导体层是至少一个半导体功能单元的一部分，半导体功能单元通过渗透功能单元半导体层，埋入半导体层和基板的隔离结构彼此电绝缘。 隔离结构包括至少一个沟槽和与衬底的导电接触，与衬底的接触通过至少一个沟槽与功能单元半导体层和掩埋层电绝缘。

    Semiconductor circuit arrangement and method
    22.
    发明申请
    Semiconductor circuit arrangement and method 审中-公开
    半导体电路的布置和方法

    公开(公告)号：US20070018274A1

    公开(公告)日：2007-01-25

    申请号：US11478912

    申请日：2006-06-30

    申请人： Dietrich Bonart ,  Walter Hartner ,  Hermann Gruber ,  Andreas Meiser

    发明人： Dietrich Bonart ,  Walter Hartner ,  Hermann Gruber ,  Andreas Meiser

    IPC分类号： H01L29/00

    CPC分类号： H01L27/0805 ,  H01L28/60

    摘要： One aspect of the present invention relates to a semiconductor circuit arrangement and to a method for producing the latter. One aspect of the invention is that, as a result of a connecting trench structure and an isolation trench structure of a semiconductor circuit being in direct spatial proximity with respect to one another, an additional capacitor device is formed. The capacitance of said capacitor device is connected as a usable capacitance for the semiconductor circuit and is connected to the latter.

    摘要翻译： 本发明的一个方面涉及一种半导体电路装置及其制造方法。 本发明的一个方面是，由于半导体电路的连接沟槽结构和隔离沟槽结构相对于彼此直接空间接近，所以形成附加的电容器器件。 所述电容器件的电容被连接作为用于半导体电路的可用电容并连接到该电容器。

    Process for the production of polyureas
    27.
    发明授权
    Process for the production of polyureas 失效
    生产聚脲的方法

    公开(公告)号：US4328330A

    公开(公告)日：1982-05-04

    申请号：US260542

    申请日：1981-05-04

    申请人： Wolfgang Wellner ,  Artur Botta ,  Hermann Gruber

    发明人： Wolfgang Wellner ,  Artur Botta ,  Hermann Gruber

    IPC分类号： C08G18/10 ,  C08G18/18 ,  C08G18/20 ,  C08G18/32 ,  C08G18/80 ,  C08G18/16

    CPC分类号： C08G18/8067 ,  C08G18/10 ,  C08G18/1858 ,  C08G18/20 ,  C08G18/3225

    摘要： The present invention relates to a process for the production of polyureas by reacting organic polyisocyanates containing blocked isocyanate groups with organic compounds containing at least two primary and/or secondary amino groups in the presence of catalysts which accelerate the condensation reaction of the above-mentioned starting materials, characterized in that compounds containing at least one guanidine group corresponding to the following formula: ##STR1## are used as catalysts.

    摘要翻译： 本发明涉及通过使含有封端异氰酸酯基的有机多异氰酸酯与含有至少两个伯氨基和/或仲氨基的有机化合物在催化剂存在下反应制备聚脲的方法，其加速上述起始物 材料，其特征在于使用含有至少一个对应于下式的胍基的化合物：作为催化剂。

    Cyanoethylated polyamide amines as hardeners for polyepoxides
    28.
    发明授权
    Cyanoethylated polyamide amines as hardeners for polyepoxides 失效
    氰基乙酰化聚酰胺胺作为聚环氧化物的硬化剂

    公开(公告)号：US4263162A

    公开(公告)日：1981-04-21

    申请号：US101752

    申请日：1979-12-10

    申请人： Hans-Josef Buysch ,  Hermann Gruber ,  Wolfgang Wellner ,  Karl Leiritz

    发明人： Hans-Josef Buysch ,  Hermann Gruber ,  Wolfgang Wellner ,  Karl Leiritz

    IPC分类号： C08G59/00 ,  C08G59/54 ,  C08L63/00

    CPC分类号： C08G59/54

    摘要： Hardeners for polyepoxides containing more than one, 1,2-epoxide group per molecule comprising a cyanoethylated polyamide amine containing free secondary or primary or secondary and primary amino groups, said cyanoethylated poly-amide amine is a reaction product of polyadded units of(A) 1 mole of a polyamine corresponding to the formula: ##STR1## in which p=0, n=2 or 3, m=0 to 6 and X=NH.sub.2, or p=1, n=2 or 3, m=0 and X=H,(B) from 0.5 to 2.3 moles of a saturated lactam, and(C) from 0.4 to 2.8 moles of acrylonitrile, methacrylonitrile or mixtures thereof.The hardener may be additionally modified with from 0.01 to 1.8 moles of a 1,2-alkylene oxide containing from 2 to 4 carbon atoms or with from 0.001 to 0.3 moles of a carboxylic acid or with the 1,2-alkylene oxide and the carboxylic acid in the quantities indicated, based in each case on 1 mole of the polyamine. The hardeners harden with 1,2-polyepoxides even in thin layers, over a period of 24 hours at room temperature to form clear, smooth films having a non-tacky fault-free surface.

    摘要翻译： 用于每分子含有多于一个1,2-环氧基的聚环氧化物的硬化剂包含含有游离仲或仲或仲或叔氨基的氰基乙基化聚酰胺胺，所述氰乙基化聚酰胺胺是（A）的多嵌段单元的反应产物， 1摩尔对应于式：其中p = 0，n = 2或3，m = 0至6和X = NH 2或p = 1，n = 2或3，m = 0和 X = H，（B）0.5至2.3摩尔饱和内酰胺，和（C）0.4至2.8摩尔丙烯腈，甲基丙烯腈或其混合物。 硬化剂可另外用0.01至1.8摩尔含有2至4个碳原子的1,2-亚烷基氧化物或0.001至0.3摩尔羧酸或与1,2-环氧烷烃和羧酸 酸，以所示的量计，基于每种情况下的1摩尔多胺。 硬化剂甚至在薄层中硬化1,2-聚环氧化物，在室温下经过24小时的时间，以形成具有非粘性无断层表面的透明，光滑的膜。