Polycrystalline MgO deposition material having adjusted Si concentration
    26.
    发明授权
    Polycrystalline MgO deposition material having adjusted Si concentration 失效
    具有调节Si浓度的多晶MgO沉积材料

    公开(公告)号:US06995104B2

    公开(公告)日:2006-02-07

    申请号:US10682039

    申请日:2003-10-10

    IPC分类号: C04B35/04

    摘要: It is an object of the present invention to provide a polycrystalline MgO deposition material which is capable of obtaining a good discharge response characteristic over a wide temperature range. Additionally, it is another object of the present invention to provide a plasma display panel with an improved luminance and a material for the plasma display panel which can remarkably reduce the number of address ICs without lowering the panel luminance. In order to achieve the objects, there is provided an improvement of a polycrystalline MgO deposition material for a passivation layer of the plasma display panel. A characteristic structure is that the polycrystalline MgO deposition material is formed of a sintered pellet of polycrystalline MgO, of which MgO purity is more than 99.9% and relative density is more than 90%. Further, a Si concentration in the polycrystalline MgO is more than 30 ppm and less than 500 ppm.

    摘要翻译: 本发明的目的是提供一种多晶MgO沉积材料,其能够在宽的温度范围内获得良好的放电响应特性。 此外,本发明的另一个目的是提供一种具有改进的亮度的等离子体显示面板和用于等离子体显示面板的材料,其可以显着地减少地址IC的数量而不降低面板亮度。 为了实现上述目的,提供了用于等离子体显示面板的钝化层的多晶MgO沉积材料的改进。 特征结构是多晶MgO沉积材料由多晶MgO的烧结颗粒形成,其中MgO的纯度大于99.9%,相对密度大于90%。 此外,多晶MgO中的Si浓度大于30ppm且小于500ppm。