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    Process for surface treatment of vulcanized rubber and process for production of rubber-based composite material
    21.
    发明授权
    Process for surface treatment of vulcanized rubber and process for production of rubber-based composite material 失效
    硫化橡胶表面处理工艺及橡胶基复合材料生产工艺

    公开(公告)号：US6013153A

    公开(公告)日：2000-01-11

    申请号：US60255

    申请日：1998-04-15

    申请人： Hideomi Koinuma ,  Yukihiro Kusano ,  Masato Yoshikawa ,  Nobuko Kato ,  Kazuo Naito

    发明人： Hideomi Koinuma ,  Yukihiro Kusano ,  Masato Yoshikawa ,  Nobuko Kato ,  Kazuo Naito

    IPC分类号： B29C59/10 ,  B29C59/12 ,  H05H1/46 ,  B32B31/20

    CPC分类号： B29C59/106 ,  B29C59/12 ,  H05H1/46 ,  B29C2059/145 ,  B29K2021/00

    摘要： A process for surface treatment of a vulcanized rubber is disclosed, said process comprising: generating a nonequilibrium low-temperature plasma under atmospheric pressure between a cathode and an insulating dielectric which is interposed between the cathode and an anode while introducing a gas for generating plasma to a plasma-generating region between the cathode and the insulating dielectric, placing the vulcanized rubber in air and outside the plasma-generating region so that a surface of the vulcanized rubber faces the plasma-generating region, and directing the gas from the plasma-generating region toward the surface of the vulcanized rubber so that the gas impinges against the rubber surface for effecting surface treatment.

    摘要翻译： 公开了一种用于表面处理硫化橡胶的方法，所述方法包括：在阴极和绝缘电介质之间的大气压下产生非平衡低温等离子体，该阴极和绝缘电介质介于阴极和阳极之间，同时引入用于产生等离子体的气体 在阴极和绝缘电介质之间的等离子体产生区域，将硫化橡胶放置在空气中并在等离子体产生区域外部，使得硫化橡胶的表面面对等离子体产生区域，并引导来自等离子体产生区域的气体 区域朝向硫化橡胶的表面，使得气体撞击橡胶表面进行表面处理。

    Plasma processing method and plasma generating device
    22.
    发明授权
    Plasma processing method and plasma generating device 失效
    等离子体处理方法和等离子体发生装置

    公开(公告)号：US5198724A

    公开(公告)日：1993-03-30

    申请号：US777708

    申请日：1991-10-21

    申请人： Hideomi Koinuma ,  Shunpei Yamazaki ,  Shigenori Hayashi ,  Akiharu Miyanaga ,  Tadashi Shiraishi

    发明人： Hideomi Koinuma ,  Shunpei Yamazaki ,  Shigenori Hayashi ,  Akiharu Miyanaga ,  Tadashi Shiraishi

    IPC分类号： C23F4/00 ,  B29C47/12 ,  B29C59/14 ,  H01J37/305 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/26 ,  H05H1/46

    CPC分类号： H01J37/32009 ,  B29C47/12 ,  B29C59/14 ,  H01J37/32532 ,  H05H1/46 ,  B29C47/0021 ,  B29K2079/08

    摘要： A plasma generating device includes a central conductor, a peripheral cylindrical conductor surrounding the central conductor, an insulating cylinder interposed between the central conductor and the peripheral conductor in order to prevent direct arc discharge from occurring between the central conductor and the peripheral conductor. The central and peripheral conductors and the insulating cylinder are coaxially arranged in order to define a cylindrical discharging space therein. By applying a high frequency energy to the central conductor, glow discharge is caused between the central and peripheral conductors. A reactive gas is introduced from one end of the discharging space, excited by the glow discharge and goes out from the other end as an excited plasma to a working place where a work piece is processed by the plasma.

    摘要翻译： 等离子体产生装置包括中心导体，围绕中心导体的外围圆柱形导体，插入在中心导体和外围导体之间的绝缘圆筒，以便防止在中心导体和外围导体之间发生直接电弧放电。 中心和周边导体和绝缘筒同轴地布置以便在其中限定圆柱形放电空间。 通过向中心导体施加高频能量，在中心导体和外围导体之间产生辉光放电。 从放电空间的一端引入反应性气体，由辉光放电激发，并作为激发的等离子体从另一端排出到等离子体处理工件的工作场所。

    Flux assisted solid phase epitaxy
    24.
    发明授权
    Flux assisted solid phase epitaxy 失效
    助焊剂固相外延

    公开(公告)号：US07507290B2

    公开(公告)日：2009-03-24

    申请号：US10593897

    申请日：2005-03-22

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C30B1/10

    CPC分类号： C30B9/08 ,  C30B3/00 ,  C30B19/02 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/3147 ,  H01L21/31691

    摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

    摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

    Flux Assisted Solid Phase Epitaxy
    25.
    发明申请
    Flux Assisted Solid Phase Epitaxy 失效
    助焊剂固相外延

    公开(公告)号：US20070209571A1

    公开(公告)日：2007-09-13

    申请号：US10593897

    申请日：2005-03-22

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C30B19/02

    CPC分类号： C30B9/08 ,  C30B3/00 ,  C30B19/02 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/3147 ,  H01L21/31691

    摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

    摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

    Masking mechanism for film forming apparatus
    28.
    发明授权
    Masking mechanism for film forming apparatus 有权
    成膜装置的遮蔽机构

    公开(公告)号：US09157144B2

    公开(公告)日：2015-10-13

    申请号：US12652340

    申请日：2010-01-05

    申请人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C23C16/00 ,  C23C14/04

    CPC分类号： C23C14/044

    摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.

    摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于沿着单轴方向（A（A））移动掩模（11）相对于基板（12）的驱动装置 ），由此以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，连续地形成三个分量的薄膜，各自的膜厚度梯度在三个不同的方向上互相间隔开 以120°的角度使得这些膜重叠，由此形成三元相图薄膜13。

    Method of making LC polymer film
    29.
    发明授权
    Method of making LC polymer film 有权
    制备LC聚合物膜的方法

    公开(公告)号：US07727686B2

    公开(公告)日：2010-06-01

    申请号：US10585204

    申请日：2004-08-27

    申请人： Hideomi Koinuma ,  Kenji Itaka ,  Keiichirou Arai

    发明人： Hideomi Koinuma ,  Kenji Itaka ,  Keiichirou Arai

    IPC分类号： C08F4/46 ,  C08J3/28 ,  C08J7/18 ,  C09K19/00 ,  G02F1/03

    CPC分类号： H01L51/10 ,  C09K19/38 ,  C09K19/3809 ,  C09K2219/03 ,  C23C14/12 ,  H01L51/0009 ,  H01L51/0076 ,  H01L51/0545 ,  H01L51/107 ,  H01L51/5253 ,  Y10T428/10 ,  Y10T428/31504

    摘要： To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.

    摘要翻译： 为了提供一种制备防潮性和/或氧气阻隔性优异的有机材料的膜的方法，并且还提供了通过这种成膜方法获得的膜在长时间稳定性方面优异的电子装置，以形成 用于保护电子装置的保护膜，特别是有机电子装置，以避免由于大气中的水分和氧气而导致的性能的劣化。 通过在衬底上沉积和固化通过用脉冲激光辐射具有光学各向异性的液晶聚合物形成的蒸发剂来形成膜。

    Device For Vacuum Processing
    30.
    发明申请
    Device For Vacuum Processing 失效
    真空处理设备

    公开(公告)号：US20100058987A1

    公开(公告)日：2010-03-11

    申请号：US12309533

    申请日：2007-02-01

    申请人： Masatomo Sumiya ,  Mikk Lippmaa ,  Tsuyoshi Ohnishi ,  Eiji Fujimoto ,  Hideomi Koinuma

    发明人： Masatomo Sumiya ,  Mikk Lippmaa ,  Tsuyoshi Ohnishi ,  Eiji Fujimoto ,  Hideomi Koinuma

    IPC分类号： C23C16/54

    CPC分类号： C23C16/481

    摘要： Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.

    摘要翻译： 公开了一种真空处理装置，其在真空室内被加热的基板上进行气相沉积; 所述装置，其中所述室具有形成在所述室的一部分中的透光窗; 光透射窗和保持基板的保持部通过与室内的其他部分分离的直线空间连接; 激光发射器安装在透光窗外; 并且激光发射器通过线性空间向基板发射激光束，从而加热基板。 该装置能够激光加热，消除诸如激光输出减少的常规缺点。