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42 条记录 (耗时 0.034 秒)

    APPARATUS AND METHOD FOR PREPARING PARTICULATES
    25.
    发明申请
    APPARATUS AND METHOD FOR PREPARING PARTICULATES 有权
    装置和制备颗粒物的方法

    公开(公告)号：US20090246366A1

    公开(公告)日：2009-10-01

    申请号：US12395958

    申请日：2009-03-02

    申请人： Go Sudo ,  Kenji Katori ,  Hayato Hommura ,  Hiroshi Matsuki ,  Akio Kayanuma

    发明人： Go Sudo ,  Kenji Katori ,  Hayato Hommura ,  Hiroshi Matsuki ,  Akio Kayanuma

    IPC分类号： B01J8/38 ,  B05C13/02

    CPC分类号： C23C14/24 ,  C23C14/22 ,  C23C14/505 ,  C23C14/545

    摘要： Disclosed herein is an apparatus for preparing composite particulates, including a rotary body having a bottom surface and a side wall and operative to contain particulates to which an adhering material is to be made to adhere; a centrifugal machine for rotating the rotary body so as to apply centrifugal forces to the particulates in the rotary body; and an inclination varying device operative to vary the inclination of the rotary body to an arbitrary inclination angle in the range from an angle at which the bottom surface of the rotary body forms a horizontal surface perpendicular to the direction of gravity to an angle at which the bottom surface forms a vertical surface parallel to the direction of gravity, and operative to support the rotary body at the arbitrary inclination angle.

    摘要翻译： 本文公开了一种制备复合颗粒的装置，包括具有底表面和侧壁的旋转体，并且可操作地容纳要使粘附材料粘附的微粒; 离心机，用于使旋转体旋转，从而向旋转体内的微粒施加离心力; 以及倾斜变化装置，其可操作以将旋转体的倾斜度在从旋转体的底面形成与重力方向垂直的水平面的角度到任意倾斜角的范围内变化到 底面形成平行于重力方向的垂直表面，并以可任意倾斜的角度支撑旋转体。

    Fuel cell device and fuel-feeding method for fuel cell
    27.
    发明申请
    Fuel cell device and fuel-feeding method for fuel cell 有权
    用于燃料电池的燃料电池装置和燃料供给方法

    公开(公告)号：US20060159968A1

    公开(公告)日：2006-07-20

    申请号：US10563508

    申请日：2004-06-30

    申请人： Go Sudo ,  Kenji Katori ,  Masahiko Tahara

    发明人： Go Sudo ,  Kenji Katori ,  Masahiko Tahara

    IPC分类号： H01M8/04

    CPC分类号： H01M8/04447 ,  H01M8/04194 ,  H01M8/045 ,  H01M8/04619 ,  H01M8/04776 ,  H01M8/04798 ,  H01M8/04835

    摘要： Optimal power generation for the output demanded by a fuel cell can be achieved. A fuel mixer 106 can adjust the methanol concentration of a mixed solution, and it adjusts the concentration of the mixed solution to an optimal methanol concentration for a load 114. Information on the methanol concentration detected by a concentration sensor 115 is sent to a controller 112 and referred to when the fuel mixer 106 adjusts the methanol concentration of the mixed solution. The concentration sensor 115 provided immediately before the fuel cell can achieve power generation while detecting the substantial methanol concentration of the mixed solution fed to the fuel cell.

    摘要翻译： 可以实现燃料电池所需输出的最佳发电。 燃料混合器106可以调节混合溶液的甲醇浓度，并且调节混合溶液的浓度至负载114的最佳甲醇浓度。 关于由浓度传感器115检测的甲醇浓度的信息被送到控制器112，并且在燃料混合器106调节混合溶液的甲醇浓度时参考。 紧接在燃料电池之前设置的浓度传感器115可以在检测供给到燃料电池的混合溶液的实质的甲醇浓度的同时实现发电。

    Nonvolatile semiconductor memory and driving method thereof
    28.
    发明授权
    Nonvolatile semiconductor memory and driving method thereof 失效
    非易失性半导体存储器及其驱动方法

    公开(公告)号：US06532165B1

    公开(公告)日：2003-03-11

    申请号：US09580541

    申请日：2000-05-30

    申请人： Kenji Katori

    发明人： Kenji Katori

    IPC分类号： G11C1122

    CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L21/28291 ,  H01L21/84 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L29/6684 ,  H01L29/78391

    摘要： In NAND type nonvolatile semiconductor memory each memory cell is made of a dual gate transistor connected at one gate portion thereof to ferroelectrics, a plurality of such memory cells are connected in series to form a memory block, and a plurality of such memory blocks are arranged to form a memory cell array and make up NAND type nonvolatile semiconductor memory. Used as each dual gate transistor is a thin film transistor which has a first gate formed on one surface of a semiconductor thin film via a first gate insulating film and a ferroelectric thin film, and a second gate electrode formed on the other surface of the semiconductor thin film via second gate insulating film in confrontation with the first gate electrode. Alternatively, ferroelectric gate type dual gate thin film transistors are made by forming thin film transistors on opposite surfaces of a ferroelectric thin film to form memory cells.

    摘要翻译： 在NAND型非易失性半导体存储器中，每个存储单元由在其一个栅极部分连接到铁电体上的双栅极晶体管构成，多个这样的存储单元串联连接以形成存储块，并且多个这样的存储块被布置 以形成存储单元阵列并构成NAND型非易失性半导体存储器。 用作每个双栅极晶体管是薄膜晶体管，其具有通过第一栅极绝缘膜和铁电薄膜形成在半导体薄膜的一个表面上的第一栅极，以及形成在半导体的另一个表面上的第二栅电极 薄膜通过与第一栅电极对抗的第二栅极绝缘膜。 或者，铁电栅极型双栅极薄膜晶体管是通过在铁电薄膜的相对表面上形成薄膜晶体管来形成存储单元。

    Nonvolatile memory with a two-terminal switching element and its driving method
    29.
    发明授权
    Nonvolatile memory with a two-terminal switching element and its driving method 失效
    具有两端开关元件的非易失性存储器及其驱动方法

    公开(公告)号：US06426891B1

    公开(公告)日：2002-07-30

    申请号：US09697207

    申请日：2000-10-26

    申请人： Kenji Katori

    发明人： Kenji Katori

    IPC分类号： G11C1136

    CPC分类号： G11C11/36 ,  G11C7/04 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

    摘要： In nonvolatile memory capable of erasing, writing and reading data, simplified in structure of memory cells, and enabling high-density information recording, each memory cell is composed of a thin film phase change material having two stable phases, “high-temperature phase” and “low-temperature phase” under the room temperature, and an np junction made by a p+-type region and an n+-type region, serially connected to the thin film phase change material. By applying a predetermined voltage to the upper electrode and the lower electrode to have a current flow in a memory cell (MC1l) and change the phase of the thin film phase change material, data is written. By flowing a current in the memory cell (M1l) and thereby reading the current phase of the thin film phase change material, data is read out.

    摘要翻译： 在能够擦除，写入和读取数据，简化存储单元的结构并且实现高密度信息记录的非易失性存储器中，每个存储单元由具有两个稳定相位的“高温相”的薄膜相变材料组成， 和“低温相”，以及由p +型区域和n +型区域构成的np结，其与薄膜相变材料串联连接。 通过向上电极和下电极施加预定电压以在存储单元（MC1l）中流动电流并改变薄膜相变材料的相位，数据被写入。 通过在存储单元（M1）中流动电流，从而读取薄膜相变材料的当前相位，读出数据。

    Electronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor device
    30.
    发明授权
    Electronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor device 失效
    电子材料，其制造方法，介质电容器，非易失性存储器和半导体器件

    公开(公告)号：US6011284A

    公开(公告)日：2000-01-04

    申请号：US995845

    申请日：1997-12-22

    申请人： Kenji Katori ,  Nicolas Nagel ,  Koji Watanabe ,  Masahiro Tanaka

    发明人： Kenji Katori ,  Nicolas Nagel ,  Koji Watanabe ,  Masahiro Tanaka

    IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76 ,  H01L27/108 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/11502 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/7687 ,  H01L27/11507 ,  H01L28/60 ,  H01L28/55

    摘要： An electronic material is expressed by the composition formula M.sub.Ia M.sub.IIb O.sub.c (where a, b and c are compositions in atomic %, M.sub.I is at least one sort of noble metal selected from the group consisting of Pt, Ir, Ru, Rh and Pd, and M.sub.II is at least one sort of transition metal selected from the group consisting of Hf, Ta, Zr, Nb, V, Mo and W) having a composition within the range of 90.gtoreq.a.gtoreq.40, 15.gtoreq.b.gtoreq.2, 4.ltoreq.c and a+b+c=100. A dielectric capacitor comprises: a diffusion preventing layer made of the material expressed by the composition formula M.sub.ia M.sub.IIb O.sub.c ; a lower electrode on the diffusion preventing layer; a dielectric film on the lower electrode; and an upper electrode on the dielectric film. Another dielectric capacitor comprises: a diffusion preventing layer made of a material expressed by the composition formula M.sub.Ia M.sub.IIb O.sub.c (where a, b and c are compositions in atomic %, M.sub.II is at least one sort of noble metal selected from the group consisting of Pt, Ir, Ru, Rh and Pd, and M.sub.II is at least one sort of rare earth element) having a composition within the range of 90.gtoreq.a.gtoreq.40, 15.gtoreq.b.gtoreq.2, 4.ltoreq.c and a+b+c=100; a lower electrode on the diffusion preventing layer; a dielectric film on the lower electrode; and an upper electrode on the dielectric film.

    摘要翻译： 电子材料由组成式MIaMIIbOc表示（其中a，b和c是原子％的组成，MI是选自Pt，Ir，Ru，Rh和Pd中的至少一种贵金属，MII 是选自组成在90以上的组成的Hf，Ta，Zr，Nb，V，Mo和W中的至少一种过渡金属）= = > = = 4，4