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    CMOS protection during germanium photodetector processing
    27.
    发明授权
    CMOS protection during germanium photodetector processing 有权
    锗光电探测器处理期间的CMOS保护

    公开(公告)号：US09136303B2

    公开(公告)日：2015-09-15

    申请号：US13970754

    申请日：2013-08-20

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Marwan H. Khater ,  Edward W. Kiewra ,  Carol Reinholm ,  Steven M. Shank

    IPC: H01L27/146 ,  H01L27/144

    CPC classification number: H01L27/14607 ,  H01L27/1443 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028

    Abstract: A method of protecting a CMOS device within an integrated photonic semiconductor structure is provided. The method may include depositing a conformal layer of germanium over the CMOS device and an adjacent area to the CMOS device, depositing a conformal layer of dielectric hardmask over the germanium, and forming, using a mask level, a patterned layer of photoresist for covering the CMOS device and a photonic device formation region within the adjacent area. Openings are etched into areas of the deposited layer of silicon nitride not covered by the patterned photoresist, such that the areas are adjacent to the photonic device formation region. The germanium material is then etched from the conformal layer of germanium at a location underlying the etched openings for forming the photonic device at the photonic device formation region. The conformal layer of germanium deposited over the CMOS device protects the CMOS device.

    Abstract translation: 提供了保护集成光子半导体结构内的CMOS器件的方法。 该方法可以包括在CMOS器件上沉积锗的保形层和与CMOS器件相邻的区域，在锗上沉积介电硬掩模的保形层，以及使用掩模级形成图案化的光致抗蚀剂层，以覆盖 CMOS器件和相邻区域内的光子器件形成区域。 将开口蚀刻到未被图案化光致抗蚀剂覆盖的氮化硅的沉积层的区域中，使得该区域与光子器件形成区域相邻。 然后在锗的共形层上蚀刻锗材料，其位于蚀刻开口下方的位置处，以在光子器件形成区域处形成光子器件。 沉积在CMOS器件上的锗的保形层保护CMOS器件。

    CMOS PROTECTION DURING GERMANIUM PHOTODETECTOR PROCESSING
    29.
    发明申请
    CMOS PROTECTION DURING GERMANIUM PHOTODETECTOR PROCESSING 有权
    CMOS保护在锗光电加工中

    公开(公告)号：US20150054041A1

    公开(公告)日：2015-02-26

    申请号：US13970754

    申请日：2013-08-20

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Marwan H. Khater ,  Edward W. Kiewra ,  Carol Reinholm ,  Steven M. Shank

    IPC: H01L27/146

    CPC classification number: H01L27/14607 ,  H01L27/1443 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028

    Abstract: A method of protecting a CMOS device within an integrated photonic semiconductor structure is provided. The method may include depositing a conformal layer of germanium over the CMOS device and an adjacent area to the CMOS device, depositing a conformal layer of dielectric hardmask over the germanium, and forming, using a mask level, a patterned layer of photoresist for covering the CMOS device and a photonic device formation region within the adjacent area. Openings are etched into areas of the deposited layer of silicon nitride not covered by the patterned photoresist, such that the areas are adjacent to the photonic device formation region. The germanium material is then etched from the conformal layer of germanium at a location underlying the etched openings for forming the photonic device at the photonic device formation region. The conformal layer of germanium deposited over the CMOS device protects the CMOS device.

    Abstract translation: 提供了保护集成光子半导体结构内的CMOS器件的方法。 该方法可以包括在CMOS器件上沉积锗的保形层和与CMOS器件相邻的区域，在锗上沉积介电硬掩模的保形层，以及使用掩模级形成图案化的光致抗蚀剂层，以覆盖 CMOS器件和相邻区域内的光子器件形成区域。 将开口蚀刻到未被图案化光致抗蚀剂覆盖的氮化硅的沉积层的区域中，使得该区域与光子器件形成区域相邻。 然后在锗的共形层上蚀刻锗材料，其位于蚀刻开口下方的位置处，以在光子器件形成区域处形成光子器件。 沉积在CMOS器件上的锗的保形层保护CMOS器件。

    Germanium photodetector
    30.
    发明授权
    Germanium photodetector 有权
    锗光电探测器

    公开(公告)号：US08846440B2

    公开(公告)日：2014-09-30

    申请号：US14104561

    申请日：2013-12-12

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    IPC: H01L21/00 ,  H01L31/108 ,  H01L31/18

    CPC classification number: H01L31/1808 ,  H01L31/1085 ,  Y02E10/50

    Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

    Abstract translation: 一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成 在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至 在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

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