公开(公告)号：US20130323890A1

公开(公告)日：2013-12-05

申请号：US13953446

申请日：2013-07-29

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/02 ,  H01L29/66

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

公开(公告)号：US08575021B2

公开(公告)日：2013-11-05

申请号：US13829290

申请日：2013-03-14

Applicant: Intermolecular, Inc.

Inventor： Thomas R. Boussie ,  Tony P. Chiang ,  Anh Duong ,  Zachary Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Sandra G. Malhotra ,  Jinhong Tong

IPC: H01L21/31 ,  H01L21/312 ,  H01L21/32

CPC classification number: H01L21/02112 ,  H01L21/02123 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/7685

Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

Abstract translation: 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

公开(公告)号：US09224639B2

公开(公告)日：2015-12-29

申请号：US14807480

申请日：2015-07-23

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/461 ,  H01L21/768 ,  H01L21/321 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

公开(公告)号：US20150279670A1

公开(公告)日：2015-10-01

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US09123785B1

公开(公告)日：2015-09-01

申请号：US14202268

申请日：2014-03-10

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 可以使用包含HF和HCl的混合物的湿式蚀刻溶液来相对于衬垫材料选择性地蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹陷在1.5和 2 nm。

公开(公告)号：US09012322B2

公开(公告)日：2015-04-21

申请号：US13857696

申请日：2013-04-05

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/3213 ,  C23F1/34

CPC classification number: H01L21/76841 ,  C23F1/34 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76883

Abstract: Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures.

Abstract translation: 导电金属（例如铜）和金属氮化物（例如，氮化钽）的湿式蚀刻溶液可以被调谐以差别蚀刻导电金属和金属氮化物，同时对附近的氧化物（例如，二氧化硅硬掩模材料）具有非常小的影响， ，并以中等速率蚀刻难熔金属（例如钽）。 溶液是加入足够的氢氟酸（HF）以使溶液的pH约为8-10的碱性水溶液（例如，过氧化铵混合物或TMAH-过氧化物混合物）。 应用包括亚微米逻辑结构的金属化。

公开(公告)号：US20150017456A1

公开(公告)日：2015-01-15

申请号：US13941841

申请日：2013-07-15

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Clemens Fitz

IPC: H01L21/3105 ,  H01L21/66

CPC classification number: H01L21/3105 ,  H01L21/02071 ,  H01L21/32134 ,  H01L22/12 ,  H01L22/26

Abstract: When an etchant for metal (e.g., HF) reaches an underlying silicon oxide layer, it may form silanol bonds or other hydrogen bonds that resist rinsing, so that some etchant remains to be trapped under the next deposited layer. Trapped etchant can create voids that eventually degrade the performance of the oxide layer. Exposing the surface to a liquid solution or gaseous precursor containing silane seals the defects without causing an overall thickness change. The silane reacts at sites with silanol (or other hydrogen) bonds, breaking the bonds and replacing the hydrogen with silicon, but does not react in the absence of a hydrogen bond.

Abstract translation: 当金属（例如HF）的蚀刻剂到达下面的氧化硅层时，它可以形成硅烷醇键或其它阻止冲洗的氢键，使得一些蚀刻剂仍然被捕获在下一沉积层下面。 捕获的蚀刻剂可能产生最终降低氧化物层性能的空隙。 将表面暴露于含有硅烷的液体溶液或气体前体将缺陷密封，而不会导致总的厚度变化。 硅烷在硅烷醇（或其他氢）键的位置处反应，破坏键并用硅代替氢，但在不存在氢键的情况下不反应。

公开(公告)号：US08859431B2

公开(公告)日：2014-10-14

申请号：US13911200

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC: H01L21/44 ,  H01L21/28 ,  H01L21/324 ,  H01L21/285 ,  H01L21/67 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20140302671A1

公开(公告)日：2014-10-09

申请号：US13857696

申请日：2013-04-05

Applicant: INTERMOLECULAR INC.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/768 ,  H01L21/306

CPC classification number: H01L21/76841 ,  C23F1/34 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76883

Abstract: Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures.

Abstract translation: 导电金属（例如铜）和金属氮化物（例如，氮化钽）的湿式蚀刻溶液可以被调谐以差别蚀刻导电金属和金属氮化物，同时对附近的氧化物（例如，二氧化硅硬掩模材料）具有非常小的影响， ，并以中等速率蚀刻难熔金属（例如钽）。 溶液是加入足够的氢氟酸（HF）以使溶液的pH约为8-10的碱性水溶液（例如，过氧化铵混合物或TMAH-过氧化物混合物）。 应用包括亚微米逻辑结构的金属化。

公开(公告)号：US08809140B2

公开(公告)日：2014-08-19

申请号：US13953446

申请日：2013-07-29

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/336

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。