Semiconductor laser diode and semiconductor laser diode assembly containing the same
    22.
    发明申请
    Semiconductor laser diode and semiconductor laser diode assembly containing the same 审中-公开
    半导体激光二极管和半导体激光二极管组件包含相同

    公开(公告)号:US20070110113A1

    公开(公告)日:2007-05-17

    申请号:US11650991

    申请日:2007-01-09

    IPC分类号: H01S3/04 H01S5/00

    摘要: Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel defined so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed; and a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide.

    摘要翻译: 提供半导体激光二极管。 半导体激光二极管包括第一材料层,有源层和第二材料层,其特征在于,半导体激光二极管包括:脊形波导,其在第二材料层上形成为脊形,以限定限定的沟道 使得第二材料层的顶部材料层被有限地暴露,并且其中形成经由沟道与第二材料层的顶部材料层接触的第二电极层; 以及第一突起,其位于脊状波导的一侧,并且具有与脊状波导的高度相同的高度。

    Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount
    24.
    发明授权
    Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 有权
    半导体激光二极管的基座,其制造方法以及使用该基座的半导体激光二极管组件

    公开(公告)号:US07092420B2

    公开(公告)日:2006-08-15

    申请号:US10732241

    申请日:2003-12-11

    IPC分类号: H01S5/00

    摘要: Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

    摘要翻译: 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板,所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度,并分别结合到第一和第二电极。

    Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount
    25.
    发明申请
    Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 审中-公开
    半导体激光二极管的基座,其制造方法以及使用该基座的半导体激光二极管组件

    公开(公告)号:US20070015313A1

    公开(公告)日:2007-01-18

    申请号:US11477911

    申请日:2006-06-30

    摘要: Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

    摘要翻译: 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板,所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度,并分别结合到第一和第二电极。

    Submount for light emitting device
    28.
    发明授权
    Submount for light emitting device 失效
    发光装置底座

    公开(公告)号:US07276740B2

    公开(公告)日:2007-10-02

    申请号:US11372204

    申请日:2006-03-10

    IPC分类号: H01L33/00

    摘要: A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

    摘要翻译: 提供了一种用于发光器件封装的基座。 基座包括基板; 分别形成在所述基板上的第一接合层和第二接合层; 分别形成在第一接合层和第二接合层上的第一阻挡层和第二阻挡层; 分别形成在第一阻挡层和第二阻挡层上的第一焊料和第二焊料; 以及形成在第一阻挡层和第二阻挡层周围的第一阻挡层和第二阻挡层,在倒装芯片工艺期间阻挡熔化的第一焊料和熔化的第二焊料溢出。

    Heat dissipating structure and light emitting device having the same
    29.
    发明申请
    Heat dissipating structure and light emitting device having the same 审中-公开
    散热结构和具有该散热结构的发光器件

    公开(公告)号:US20060249745A1

    公开(公告)日:2006-11-09

    申请号:US11387864

    申请日:2006-03-24

    IPC分类号: H01L33/00

    摘要: A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.

    摘要翻译: 散热结构被倒装贴合到发光元件上并且有利于散热。 散热结构包括:面向发光元件并具有至少一个凹槽的基座; 填充到所述至少一个凹槽的至少一部分中的导电材料层; 以及插入在发光元件和用于接合的基座之间的焊料层。 散热结构和具有该散热结构的发光装置允许在操作期间有效地散发在发光元件中产生的热量。