Method for tuning piezoelectric resonators
    21.
    发明授权
    Method for tuning piezoelectric resonators 失效
    压电谐振器调谐方法

    公开(公告)号:US4454639A

    公开(公告)日:1984-06-19

    申请号:US384827

    申请日:1982-06-03

    IPC分类号: H03H3/04 H01L41/22

    CPC分类号: H03H3/04 Y10T29/42

    摘要: A method for adjusting the frequency of a piezoelectic resonator such as a quartz crystal is disclosed. The resonator is placed within its enclosure facing a metallic surface. The atmosphere within the enclosure is made suitable for supporting a glow discharge. An electrical potential is then established between the resonator electrode and the metallic surface causing mass to sputter between the electrode and to the metallic surface to vary the characteristics of the resonator.

    摘要翻译: 公开了一种用于调节诸如石英晶体的压电谐振器的频率的方法。 谐振器被放置在其外壳内面向金属表面。 外壳内的气氛适合于支持辉光放电。 然后在谐振器电极和金属表面之间建立电位,导致质量在电极和金属表面之间溅射,以改变谐振器的特性。

    Piezoelectric crystal mounting and connection arrangement
    23.
    发明授权
    Piezoelectric crystal mounting and connection arrangement 失效
    压电晶体安装和连接布置

    公开(公告)号:US4282454A

    公开(公告)日:1981-08-04

    申请号:US33774

    申请日:1979-04-27

    IPC分类号: H01L41/22 H03H9/05 H01L41/08

    摘要: A crystal is mounted on a low, centrally located pedestal. Connections to the lower side of the crystal are made by way of conductive areas on the pedestal. Multiple wiring connections are made at the edges of the crystal by allowing the bonding tool to depress the edge of the crystal so that the crystal bonding pad is supported by the base structure only during the bonding process, then released thereafter to allow free vibration of the crystal plate. Complex circuitry, possibly involving more than one frequency can thus be put onto one plate.

    摘要翻译: 一个晶体安装在低位于中央的基座上。 与晶体下侧的连接是通过基座上的导电区域制成的。 通过允许接合工具压下晶体的边缘,在晶体的边缘处进行多个接线连接,使得晶体接合焊盘仅在接合过程期间由基底结构支撑,然后释放以允许晶体的自由振动 水晶板。 因此,可能涉及多于一个频率的复杂电路可以放在一个板上。

    Field emission display having an ion shield
    24.
    发明授权
    Field emission display having an ion shield 失效
    具有离子屏蔽的场发射显示

    公开(公告)号:US5929560A

    公开(公告)日:1999-07-27

    申请号:US36303

    申请日:1998-03-06

    IPC分类号: H01J1/304 H01J3/02 H01J1/62

    CPC分类号: H01J3/022 H01J2201/025

    摘要: A field emission display (100) includes a dielectric layer (132) having a plurality of emitter wells (134), a plurality of electron emitters (136) disposed one each within the plurality of emitter wells (134), a plurality of conductive rows (138, 140, 142) disposed on the dielectric layer (132) and having sacrificial portions (154), an ion shield (139) disposed on the dielectric layer (132) and spaced apart from the sacrificial portions (154) of the plurality of conductive rows (138, 140, 142), and an anode (121) opposing the plurality of electron emitters (136) and defining a projected area (122) at the plurality of conductive rows (138, 140, 142). The sacrificial portions (154) of the plurality of conductive rows (138, 140, 142) extend beyond the projected area (122) of the anode (121).

    摘要翻译: 场发射显示器(100)包括具有多个发射极阱(134)的电介质层(132),多个发射极阱(134)中的每一个都设置的多个电子发射器(136),多个导电行 (138,140,​​142),设置在电介质层(132)上并具有牺牲部分(154),设置在电介质层(132)上并离开多个牺牲部分(154)的离子屏蔽(139) 的导电行(138,140,​​142)以及与所述多个电子发射器(136)相对并且在所述多个导电行(138,140,​​142)处限定投影区域(122)的阳极(121)。 多个导电行(138,140,​​142)的牺牲部分(154)延伸超过阳极(121)的投影区域(122)。

    Process for manufacturing a field-emission device
    25.
    发明授权
    Process for manufacturing a field-emission device 失效
    制造场致发射装置的方法

    公开(公告)号:US5727977A

    公开(公告)日:1998-03-17

    申请号:US608023

    申请日:1996-03-04

    IPC分类号: H01J9/02

    CPC分类号: H01J9/025 B82Y10/00 B82Y30/00

    摘要: A process for manufacturing of a field emission device (100, 200) including the steps of i) providing a substrate (101, 201), ii) forming a conductive row (106, 206), ii) forming a dielectric layer (102, 202), iv) forming a resist layer (116, 216), v) forming a self-assembled monolayer (112, 212) of a self-assembled monolayer-forming molecular species on the resist layer (116, 216) so that the self-assembled monolayer (112, 212) defines an etch pattern for an emitter well (107, 207), vi) etching the resist layer (116, 216), vii) etching the dielectric layer ((102, 202), viii) forming conductive column (103, 203), and ix) forming the electron-emitter structure (105, 208) within the emitter well (107, 207).

    摘要翻译: 一种用于制造场致发射器件(100,200)的方法,包括以下步骤:i)提供衬底(101,201),ii)形成导电行(106,206),ii)形成介电层(102, 202),iv)形成抗蚀剂层(116,216),v)在抗蚀剂层(116,216)上形成自组装单层形成分子物质的自组装单层(112,212),使得 自组装单层(112,212)限定了用于发射极阱(107,207)的蚀刻图案,vi)蚀刻抗蚀剂层(116,216),vii)蚀刻介电层((102,202)),viii) 形成导电柱(103,203),以及ix)在发射阱(107,207)内形成电子 - 发射结构(105,208)。

    Apparatus and method for patterning a surface
    26.
    发明授权
    Apparatus and method for patterning a surface 失效
    用于图案化表面的装置和方法

    公开(公告)号:US5725788A

    公开(公告)日:1998-03-10

    申请号:US608022

    申请日:1996-03-04

    摘要: An apparatus (95) and method for patterning a surface of an article (30), the apparatus (95) including a large-area stamp (50) for forming a self-assembled monolayer (36) (SAM) of a molecular species (38) on the surface (34) of a layer (32) of resist material, which is formed on the surface of the article (30). The large-area stamp (50) includes a layer (52) of an elastomer and has, embedded within it, mechanical structures (68, 80) which stiffen the large-area stamp (50) and deform it to control the stamped patterns. The method includes the steps of: forming a layer (32) of resist material is on the surface of the article (30), utilizing the large-area stamp (50) to form the SAM (36) on the surface (34) of the layer (32) of resist material, etching the layer (32) of resist material, and thereafter etching or plating the surface of the article (30).

    摘要翻译: 一种用于对制品(30)的表面进行图案化的装置(95)和方法,所述装置(95)包括用于形成分子种类的自组装单层(36)(SAM)的大面积印模(50) 38)形成在制品(30)的表面上的抗蚀剂材料层(32)的表面(34)上。 大面积邮票(50)包括弹性体层(52),并且内嵌有机械结构(68,80),其加强大面积印模(50)并使其变形以控制冲压图案。 该方法包括以下步骤:在制品(30)的表面上形成抗蚀剂材料层(32),利用大面积印模(50)在表面(34)上形成SAM(36) 抗蚀剂材料层(32),蚀刻抗蚀剂材料层(32),然后蚀刻或电镀制品(30)的表面。

    Heterostructure electron emitter utilizing a quantum well
    27.
    发明授权
    Heterostructure electron emitter utilizing a quantum well 失效
    异质结电子发射体利用量子阱

    公开(公告)号:US5442192A

    公开(公告)日:1995-08-15

    申请号:US187258

    申请日:1994-01-27

    CPC分类号: H01J1/308

    摘要: A heterostructure electron emitter including a substrate having a surface with a predetermined potential barrier and a quantum well formed in the substrate adjacent the surface. Contacts are positioned on the substrate for coupling free electrons to the substrate and into the quantum well. An acoustic wave device is positioned on the substrate so as to direct acoustic waves to strike the free electrons in the quantum well and excite the free electrons sufficiently to cause the free electrons to overcome the potential barrier and to be emitted from the surface of the substrate.

    摘要翻译: 异质结构电子发射体包括具有预定势垒的表面的衬底和与衬底相邻的表面形成的量子阱。 触点位于衬底上,用于将自由电子耦合到衬底并进入量子阱。 声波器件位于衬底上,以引导声波冲击量子阱中的自由电子,并充分激发自由电子,使自由电子克服势垒并从衬底的表面发射 。

    Gridded spacer assembly for a field emission display
    28.
    发明授权
    Gridded spacer assembly for a field emission display 失效
    用于场发射显示器的格栅间隔器组件

    公开(公告)号:US5864205A

    公开(公告)日:1999-01-26

    申请号:US752977

    申请日:1996-12-02

    摘要: A gridded spacer assembly (130, 230) for a field emission display (100, 200) includes a plurality of spacers (135, 235), a focusing grid (132, 232) having a plurality of spacer apertures (133) in which the spacers (135, 235) are disposed and to which the spacers (135, 235) are affixed adjacent their lower end, a stabilization grid (138, 238) having a plurality of spacer apertures (137) in registration with the spacer apertures (133) of the focusing grid (132, 232), the spacers (135, 235) being disposed therein and affixed thereto adjacent their upper end, the focusing grid (132, 232) and the stabilization grid (138, 238) having a plurality of focusing apertures (139) for collimating and focusing a beam of electrons (150).

    摘要翻译: 用于场致发射显示器(100,200)的格栅间隔件组件(130,230)包括多个间隔件(135,235),具有多个间隔孔(133)的聚焦栅格(132,232),其中 间隔件(135,235)被布置并且隔离件(135,235)在其下端附近固定到所述间隔件上,一个具有多个间隔孔(137)的稳定栅格(138,238)与间隔开孔 ),所述间隔物(135,235)被布置在其中并在其上端附近固定,所述聚焦栅格(132,232)和所述稳定栅格(138,238)具有多个 聚焦孔(139),用于使电子束(150)准直和聚焦。