摘要:
A process for manufacturing of a field emission device (100, 200) including the steps of i) providing a substrate (101, 201), ii) forming a conductive row (106, 206), ii) forming a dielectric layer (102, 202), iv) forming a resist layer (116, 216), v) forming a self-assembled monolayer (112, 212) of a self-assembled monolayer-forming molecular species on the resist layer (116, 216) so that the self-assembled monolayer (112, 212) defines an etch pattern for an emitter well (107, 207), vi) etching the resist layer (116, 216), vii) etching the dielectric layer ((102, 202), viii) forming conductive column (103, 203), and ix) forming the electron-emitter structure (105, 208) within the emitter well (107, 207).
摘要:
An apparatus (95) and method for patterning a surface of an article (30), the apparatus (95) including a large-area stamp (50) for forming a self-assembled monolayer (36) (SAM) of a molecular species (38) on the surface (34) of a layer (32) of resist material, which is formed on the surface of the article (30). The large-area stamp (50) includes a layer (52) of an elastomer and has, embedded within it, mechanical structures (68, 80) which stiffen the large-area stamp (50) and deform it to control the stamped patterns. The method includes the steps of: forming a layer (32) of resist material is on the surface of the article (30), utilizing the large-area stamp (50) to form the SAM (36) on the surface (34) of the layer (32) of resist material, etching the layer (32) of resist material, and thereafter etching or plating the surface of the article (30).
摘要:
An apparatus (100) including a support structure (104), a flexible stamp (106) having a stamping surface (110) including a predetermined pattern disposed opposite the support structure (104), a pressure controlled chamber (112) disposed above the support structure (104), and a mechanical attachment (114) affixed to the flexible stamp (106). A method is provided for stamping the surface (101) of an article (102) including the steps of i) placing the article (102) on the support structure (104) within the pressure-controlled chamber (112), ii) wetting the stamping surface (110) with a solution containing a self-assembled monolayer-forming molecular species, iii) aligning alignment patterns (118) on the flexible stamp (106) with alignment patterns (124) on the surface (101) of the article (102), iv) controllably contacting the wetted stamping surface (110) with the surface (101) of the article (102) by changing the pressure differential across the flexible stamp (106) so that contact commences at the center of the flexible stamp (106) and proceeds outwardly in a controlled manner, and v) removing the stamping surface (110) from the surface (101) of the article so that a self-assembled monolayer (134) having the predetermined pattern is formed on the surface (101) of the article (102).
摘要:
A high efficiency power amplifier includes an integrated circuit with a heterojunction interband tunneling field effect transistor (HITFET) amplifier coupled to receive high frequency (into the GHz) RF signals. The HITFET amplifier is constructed to receive the RF signal with a given frequency at the input terminal and to produce a substantially square wave signal at the given frequency at an output terminal in response to the RF signal applied to the input terminal. The gate of a switching FET connected as a class E amplifier is coupled to the output of the HITFET for receiving the square wave signal and an impedance matching output circuit is coupled to the drain of the switching FET.
摘要:
An enhanced mobility semiconductor comprising a host quantum well having at least two charge carrier barrier layers of a wide bandgap material, each of the two charge carrier barrier layers being separated by a conducting region containing charge carriers is provided. A number of phonon barriers having a predetermined thickness are formed in the conducting region wherein the predetermined thickness is chosen to allow charge carrier tunneling through the phonon barriers.
摘要:
A VCO includes a transistor having a plurality of negative differential resistance devices coupled in series to the source terminal of the transistor, with each of the devices having a negative differential resistance operating region. Biasing circuits are coupled to the drain and gate terminals along with operating voltages which set the oscillator to operating in a negative differential resistance region of at least one of the negative differential resistance devices so that oscillations of a selected frequency are produced at an output terminal. The transistor, the plurality of N devices, the DC biasing circuits, and the operating voltages are connected so that the oscillator negative differential resistance operating region is greater than N times as wide as each of the device negative differential operating regions individually.
摘要:
A quasi 1-dimensional electron gas transistor has been provided having a source electrode and a drain electrode. A plurality of electrodes are positioned between the source and drain electrodes in a manner which are parallel to the electron flow between the source and the drain electrodes. In one embodiment, the electrodes are interconnected by a gate electrode while in an alternate embodiment all the electrodes are connected to the source electrode and insulated from the gate electrode. This device provides a quantum wire for quasi 1-dimensional electron flow.
摘要:
An apparatus and method are provided for forming one dimensional nanostructures. The method comprises ink jet printing (52) a plurality of catalyst particles (36) on a substrate (32). A gas (20) is applied (54) to the catalyst particles (36) while simultaneously applying (56) microwave radiation (38).
摘要:
A method and system for managing a communication session among a plurality of communication members (116, 118, 120 and 122) is provided. The communication session is managed by an electronic device (102). The method includes identifying (304) an interrupted communication member (120) from the plurality of communication members. The interrupted communication member is talked-over by an interrupting communication member (122) during the communication session. Further, the method includes determining (306) an opportunity to notify in the communication session when the talk-over concludes. Furthermore, the method includes providing (308) a notification of the talk-over to the plurality of communication members during the opportunity to notify.
摘要:
A method of performing a binding assay which comprises the steps of separating a plurality of sample fragments into a plurality of subsamples and applying each of the plurality of subsamples to a respective one of a plurality of binding assays. A system which performs the aforementioned steps is also disclosed.