公开(公告)号：US20060071275A1

公开(公告)日：2006-04-06

申请号：US10956279

申请日：2004-09-30

申请人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L27/12

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20060057808A1

公开(公告)日：2006-03-16

申请号：US10939227

申请日：2004-09-10

申请人： Robert Turkot ,  Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Suman Datta ,  Robert Chau

发明人： Robert Turkot ,  Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Suman Datta ,  Robert Chau

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3205

CPC分类号： H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517

摘要： A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.

摘要翻译： 在形成在基板上的电介质层上形成金属层。 在金属层上形成掩模层之后，介电层的暴露侧面被聚合物扩散阻挡层覆盖。

公开(公告)号：US20060051957A1

公开(公告)日：2006-03-09

申请号：US10936114

申请日：2004-09-07

申请人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Brian Doyle ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Brian Doyle ,  Robert Chau

IPC分类号： H01L21/4763

CPC分类号： H01L21/82385 ,  H01L21/28114 ,  H01L21/30608 ,  H01L21/823828 ,  H01L29/42376 ,  H01L29/66545 ,  Y10S438/926

摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider than the first layer. After the sacrificial structure is removed to generate a trench, a metal gate electrode is formed within the trench.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成介电层和包括第一层和第二层的牺牲结构，使得第二层形成在第一层上并且比第一层更宽。 在除去牺牲结构以产生沟槽之后，在沟槽内形成金属栅电极。

公开(公告)号：US20050263483A1

公开(公告)日：2005-12-01

申请号：US11196034

申请日：2005-08-03

申请人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Robert Chau

IPC分类号： B44C1/22 ,  C09K13/00 ,  C09K13/06 ,  H01L21/302 ,  H01L21/3213

CPC分类号： H01L21/32134 ,  C09K13/06

摘要： Semiconductor integrated circuit structures, such as stacks containing metal layers, may be etched with a modified viscosity etchant. An increased viscosity etchant, for example, may reduce undercutting when a metal film is being etched.

摘要翻译： 半导体集成电路结构，例如包含金属层的堆叠，可以用修改的粘度蚀刻剂进行蚀刻。 例如，当蚀刻金属膜时，增加的粘度蚀刻剂可以减少底切。

公开(公告)号：US20050136677A1

公开(公告)日：2005-06-23

申请号：US10739173

申请日：2003-12-18

申请人： Justin Brask ,  Jack Kavalieros ,  Uday Shah ,  Mark Doczy ,  Matthew Metz ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Uday Shah ,  Mark Doczy ,  Matthew Metz ,  Robert Chau

IPC分类号： H01L21/033 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28185 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/511 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659

摘要： A method for making a semiconductor device is described. That method comprises forming a dummy dielectric layer that is at least about 10 angstroms thick on a substrate, and forming a sacrificial layer on the dummy dielectric layer. After removing the sacrificial layer and the dummy dielectric layer to generate a trench that is positioned between first and second spacers, a gate dielectric layer is formed on the substrate at the bottom of the trench, and a metal layer is formed on the gate dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成至少约10埃厚的虚拟电介质层，并在虚拟电介质层上形成牺牲层。 在除去牺牲层和虚设电介质层以产生位于第一和第二间隔物之间​​的沟槽之后，在沟槽的底部的衬底上形成栅介质层，并且在栅介质层上形成金属层 。

公开(公告)号：US20050048791A1

公开(公告)日：2005-03-03

申请号：US10652546

申请日：2003-08-28

申请人： Justin Brask ,  Uday Shah ,  Mark Doczy ,  Jack Kavalieros ,  Robert Chau ,  Robert Turkot ,  Matthew Metz

发明人： Justin Brask ,  Uday Shah ,  Mark Doczy ,  Jack Kavalieros ,  Robert Chau ,  Robert Turkot ,  Matthew Metz

IPC分类号： H01L21/336 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31111

摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成高k栅极电介质层，以及修改高k栅极电介质层的第一部分，以确保其可被选择性地去除到高k栅极电介质层的第二部分。

公开(公告)号：US20060180878A1

公开(公告)日：2006-08-17

申请号：US11393151

申请日：2006-03-29

申请人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Chris Barns ,  Matthew Metz ,  Suman Datta ,  Annalisa Cappellani ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Chris Barns ,  Matthew Metz ,  Suman Datta ,  Annalisa Cappellani ,  Robert Chau

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/82345 ,  H01L21/28229 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, then forming a trench within the first dielectric layer. After forming a second dielectric layer on the substrate, a first metal layer is formed within the trench on a first part of the second dielectric layer. A second metal layer is then formed on the first metal layer and on a second part of the second dielectric layer.

公开(公告)号：US20060157747A1

公开(公告)日：2006-07-20

申请号：US11037512

申请日：2005-01-18

申请人： Amlan Majumdar ,  Justin Brask ,  Marko Radosavljevic ,  Suman Datta ,  Brian Doyle ,  Mark Doczy ,  Jack Kavalieros ,  Matthew Metz ,  Robert Chau ,  Uday Shah ,  James Blackwell

发明人： Amlan Majumdar ,  Justin Brask ,  Marko Radosavljevic ,  Suman Datta ,  Brian Doyle ,  Mark Doczy ,  Jack Kavalieros ,  Matthew Metz ,  Robert Chau ,  Uday Shah ,  James Blackwell

IPC分类号： H01L29/76

CPC分类号： B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S977/701 ,  Y10S977/938

摘要： A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.

摘要翻译： 诸如碳纳米管晶体管的纳米管晶体管可以形成有顶栅电极和间隔开的源极和漏极。 沿晶体管从源极到漏极的导通由栅电极控制。 栅电极底部至少有两个纳米管。 在一些实施例中，衬底可用作背栅。

公开(公告)号：US20060138552A1

公开(公告)日：2006-06-29

申请号：US11360269

申请日：2006-02-22

申请人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20050272191A1

公开(公告)日：2005-12-08

申请号：US10861727

申请日：2004-06-03

申请人： Uday Shah ,  Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Robert Chau ,  Chris Barns

发明人： Uday Shah ,  Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Robert Chau ,  Chris Barns

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/338 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/66545 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66583 ,  H01L29/7833

摘要： A method for making a semiconductor device is described. That method comprises forming a sacrificial layer on a substrate, and forming a trench within the sacrificial layer. After forming a dummy gate electrode within the trench, a hard mask is formed on the dummy gate electrode and within the trench.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成牺牲层，以及在牺牲层内形成沟槽。 在沟槽内形成虚拟栅电极之后，在伪栅电极和沟槽内形成硬掩模。