公开(公告)号：US20140001370A1

公开(公告)日：2014-01-02

申请号：US14014142

申请日：2013-08-29

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

IPC: G01N21/88

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

公开(公告)号：US10193293B2

公开(公告)日：2019-01-29

申请号：US15948141

申请日：2018-04-09

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Justin Dianhuan Liou ,  Vladimir Dribinski ,  David L. Brown

IPC: G02B5/30 ,  H01S3/00 ,  G02B27/28 ,  H01S3/083 ,  G01N21/21 ,  G01N21/95 ,  G02B5/08

Abstract: A pulse multiplier includes a polarizing beam splitter, a wave plate, and a set of multi-surface reflecting components (e.g., one or more etalons and one or more mirrors). The polarizing beam splitter passes input laser pulses through the wave plate to the multi-surface reflecting components, which reflect portions of each input laser pulse back through the wave plate to the polarizing beam splitter. The polarizing beam splitter reflects each reflected portion to form an output of the pulse multiplier. The multi-surface reflecting components are configured such that the output pulses exiting the pulse multiplier have an output repetition pulse frequency rate that is at least double the input repetition pulse frequency.

公开(公告)号：US20180191126A1

公开(公告)日：2018-07-05

申请号：US15901388

申请日：2018-02-21

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Justin Dianhuan Liou ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/30

CPC classification number: H01S3/302 ,  G01N21/9501 ,  G02B17/0892 ,  G02F1/353 ,  G02F1/395 ,  G02F2001/354 ,  H01S3/005 ,  H01S3/0092 ,  H01S3/067 ,  H01S3/06754 ,  H01S3/10053 ,  H01S3/11 ,  H01S3/16 ,  H01S3/1643 ,  H01S3/1666 ,  H01S3/23 ,  H01S3/2308

Abstract: An optical inspection system that utilizes sub-200 nm incident light beam to inspect a surface of an object for defects is described. The sub-200 nm incident light beam is generated by combining first light having a wavelength of about 1109 nm with second light having a wavelength of approximately 234 nm. An optical system includes optical components configured to direct the incident light beam to a surface of the object, and image relay optics are configured to collect and relay at least two channels of light to a sensor, where at least one channel includes light reflected from the object, and at least one channel includes light transmitted through the object. The sensor is configured to simultaneously detect both the reflected and transmitted light. A laser for generating the sub-200 nm incident light beam includes a fundamental laser, two or more harmonic generators, a frequency doubler and a two frequency mixing stages.

公开(公告)号：US09966230B1

公开(公告)日：2018-05-08

申请号：US15605308

申请日：2017-05-25

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/244 ,  H01J37/10 ,  H01J37/147 ,  H01J37/04 ,  H01J37/073

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/073 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/0435

Abstract: A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.

公开(公告)号：US09478402B2

公开(公告)日：2016-10-25

申请号：US14198175

申请日：2014-03-05

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

IPC: H01L31/11 ,  H01L31/167 ,  H01J40/06 ,  H01L31/103 ,  H01J43/08

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：US09459215B2

公开(公告)日：2016-10-04

申请号：US15010331

申请日：2016-01-29

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Vladimir Dribinski

IPC: G01N21/00 ,  G01N21/88 ,  C30B29/10 ,  C30B33/00 ,  C30B33/02 ,  G01N21/3563 ,  G01N21/59 ,  G01N21/95 ,  G01N21/35 ,  G01N21/84

CPC classification number: H01L21/3003 ,  C30B29/10 ,  C30B33/00 ,  C30B33/02 ,  G01N21/3563 ,  G01N21/59 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/3568 ,  G01N2021/3595 ,  G01N2021/8477 ,  G01N2021/8822 ,  G01N2201/06113 ,  H01L21/322 ,  H01S3/027 ,  H01S3/094 ,  H01S3/109 ,  H01S3/1666

Abstract: A system for optically inspection one or more samples includes a sample stage, a laser system configured for illuminating a portion of the surface of the one or more samples disposed on the sample stage, and a detector configured to receive at least a portion of illumination reflected from the surface of the sample. The laser system includes an NLO crystal annealed within a selected temperature range. In addition, the NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. Further, the laser system includes a light source configured to generate light of a selected wavelength. The light source is configured to transmit light through the NLO crystal. The laser system includes a crystal housing unit configured to house the NLO crystal.

Abstract translation: 用于光学检查一个或多个样品的系统包括样品台，配置用于照射设置在样品台上的一个或多个样品的表面的一部分的激光系统，以及被配置为接收反射的至少一部分光的检测器 从样品的表面。 激光系统包括在所选温度范围内退火的NLO晶体。 此外，NLO晶体与氢，氘，含氢化合物或含氘化合物中的至少一种钝化至选定的钝化水平。 此外，激光系统包括被配置为产生所选波长的光的光源。 光源配置为透过NLO晶体传输光。 激光系统包括构造成容纳NLO晶体的晶体容纳单元。

公开(公告)号：US20160169815A1

公开(公告)日：2016-06-16

申请号：US15010331

申请日：2016-01-29

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Vladimir Dribinski

IPC: G01N21/88 ,  G01N21/95

CPC classification number: H01L21/3003 ,  C30B29/10 ,  C30B33/00 ,  C30B33/02 ,  G01N21/3563 ,  G01N21/59 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/3568 ,  G01N2021/3595 ,  G01N2021/8477 ,  G01N2021/8822 ,  G01N2201/06113 ,  H01L21/322 ,  H01S3/027 ,  H01S3/094 ,  H01S3/109 ,  H01S3/1666

Abstract: A system for optically inspection one or more samples includes a sample stage, a laser system configured for illuminating a portion of the surface of the one or more samples disposed on the sample stage, and a detector configured to receive at least a portion of illumination reflected from the surface of the sample. The laser system includes an NLO crystal annealed within a selected temperature range. In addition, the NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. Further, the laser system includes a light source configured to generate light of a selected wavelength. The light source is configured to transmit light through the NLO crystal. The laser system includes a crystal housing unit configured to house the NLO crystal.

Abstract translation: 用于光学检查一个或多个样品的系统包括样品台，配置用于照射设置在样品台上的一个或多个样品的表面的一部分的激光系统，以及被配置为接收反射的至少一部分照度的检测器 从样品的表面。 激光系统包括在所选温度范围内退火的NLO晶体。 此外，NLO晶体与氢，氘，含氢化合物或含氘化合物中的至少一种钝化至选定的钝化水平。 此外，激光系统包括被配置为产生所选波长的光的光源。 光源配置为透过NLO晶体传输光。 激光系统包括构造成容纳NLO晶体的晶体容纳单元。

公开(公告)号：US20150071316A1

公开(公告)日：2015-03-12

申请号：US14080746

申请日：2013-11-14

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang

IPC: H01S3/00

CPC classification number: H01S3/0092 ,  G01N21/33 ,  G01N21/9501 ,  G01N2021/95676 ,  G01N2201/067 ,  G02F1/35 ,  G02F1/37 ,  G02F2201/16 ,  H01S3/0085

Abstract: A laser for generating deep ultra-violet (DUV) continuous wave (CW) light includes a second-harmonic generator and a fourth-harmonic generator. The fourth-harmonic generator includes a plurality of mirrors as well as first and second non-linear optical (NLO) crystals. The first NLO crystal generates the light having the fourth harmonic wavelength, and is placed in operative relation to the plurality of mirrors. The second NLO crystal is placed in operative relation to the first NLO crystal such that the light having the second harmonic wavelength passes through both the first and the second NLO crystals. Notably, the second optical axes of the second NLO crystal are rotated about a direction of propagation of the light within the second NLO crystal approximately 90 degrees relative to the first optical axes of the first NLO crystal. The second NLO crystal provides no wavelength conversion.

Abstract translation: 用于产生深紫外（DUV）连续波（CW）光的激光器包括二次谐波发生器和四次谐波发生器。 第四谐波发生器包括多个反射镜以及第一和第二非线性光学（NLO）晶体。 第一NLO晶体产生具有第四谐波波长的光，并且与多个反射镜成为可操作的关系。 将第二NLO晶体置于与第一NLO晶体的操作关系中，使得具有二次谐波波长的光通过第一和第二NLO晶体。 值得注意的是，第二NLO晶体的第二光轴相对于第一NLO晶体的第一光轴围绕第二NLO晶体内的光的传播方向大约90度旋转。 第二个NLO晶体不提供波长转换。

公开(公告)号：US08929406B2

公开(公告)日：2015-01-06

申请号：US14158615

申请日：2014-01-17

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  Yujun Deng ,  John Fielden

IPC: H01S3/30 ,  H01S3/00 ,  G01N21/84

CPC classification number: H01S3/1083 ,  G01N21/84 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02F1/3534 ,  G02F1/3536 ,  G02F1/39 ,  G02F2001/3507 ,  G02F2201/16 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0602 ,  H01S3/067

Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

Abstract translation: 用于产生约193.4nm的输出波长的激光器包括基本激光器，光参量发生器，第四谐波发生器和混频模块。 耦合到基本激光器的光学参数发生器可以产生下变频信号。 可以耦合到光学参数发生器或基本激光器的第四谐波发生器可以产生四次谐波。 耦合到光参量发生器和第四谐波发生器的混频模块可产生频率等于下变频信号频率的四次谐波和两倍的频率的激光输出。

公开(公告)号：US08748828B2

公开(公告)日：2014-06-10

申请号：US13622155

申请日：2012-09-18

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Guowu Zheng ,  Yung-Ho Chuang ,  Venkatraman Iyer

IPC: G01T1/20

CPC classification number: H01L27/14636 ,  G01N21/9501 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14806 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/19105 ,  H04N5/3355 ,  H04N5/369 ,  H05K13/00 ,  Y10T29/49117

Abstract: The present invention includes an interposer disposed on a surface of a substrate, a light sensing array sensor disposed on the interposer, the light sensing array sensor being back-thinned and configured for back illumination, the light sensing array sensor including columns of pixels, one or more amplification circuitry elements configured to amplify an output of the light sensing array sensor, the amplification circuits being operatively connected to the interposer, one or more analog-to-digital conversion circuitry elements configured to convert an output of the light sensing array sensor to a digital signal, the ADC circuitry elements being operatively connected to the interposer, one or more driver circuitry elements configured to drive a clock or control signal of the array sensor, the interposer configured to electrically couple at least two of the light sensing array sensor, the amplification circuits, the conversion circuits, the driver circuits, or one or more additional circuits.

Abstract translation: 本发明包括设置在基板的表面上的插入器，设置在插入件上的光感测阵列传感器，光感测阵列传感器被背面薄化并被配置为用于背光照明，光感测阵列传感器包括像素列，一 或多个放大电路元件，被配置为放大光感测阵列传感器的输出，放大电路可操作地连接到插入器，一个或多个模拟 - 数字转换电路元件，被配置为将光感测阵列传感器的输出转换成 数字信号，所述ADC电路元件可操作地连接到所述插入器，配置成驱动所述阵列传感器的时钟或控制信号的一个或多个驱动器电路元件，所述插入器被配置为电耦合所述光感测阵列传感器中的至少两个， 放大电路，转换电路，驱动器电路或一个或多个附加电路 电话