公开(公告)号：US20080135967A1

公开(公告)日：2008-06-12

申请号：US11942506

申请日：2007-11-19

申请人： Katsuhiko Kitagawa ,  Hiroyuki Shinogi ,  Shinzo Ishibe ,  Hiroshi Yamada

发明人： Katsuhiko Kitagawa ,  Hiroyuki Shinogi ,  Shinzo Ishibe ,  Hiroshi Yamada

IPC分类号： H01L31/0203 ,  H01L31/18

CPC分类号： H01L31/0203 ,  H01L31/0224 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layer 6 due to a blue-violet laser.

摘要翻译： 本发明旨在提供一种接收蓝紫色激光的半导体器件，其可靠性和产量得到提高。 在半导体衬底的前表面上形成将蓝紫色激光转换为电信号的器件元件。 光学透明基板以其间插入粘合剂层的方式附着于半导体基板的前表面。 粘合层含有透明硅胶。 由于器件元件的前表面被光学透明基板覆盖，因此防止异物粘附到器件元件的前表面。 此外，粘合剂层被光学透明基板覆盖。 这防止粘合剂层暴露于外部空气，从而防止由于蓝紫色激光而导致的粘合剂层6的劣化。

公开(公告)号：US20100044821A1

公开(公告)日：2010-02-25

申请号：US12538304

申请日：2009-08-10

申请人： Takashi Noma ,  Yoshimasa Amatatsu ,  Yoshinori Seki ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Yoshimasa Amatatsu ,  Yoshinori Seki ,  Hiroyuki Shinogi

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02162 ,  H01L27/14621 ,  H01L27/14645

摘要： This invention offers a semiconductor device to measure a luminance for the visible wavelength range of light components and its manufacturing method which reduce its manufacturing cost. A first light-receiving element and a second light-receiving element are formed in a semiconductor substrate. Then, there is formed an arithmetic circuit that calculates a difference between a value of an electric current corresponding to an amount of light detected by the first light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light) and a value of an electric current corresponding to an amount of light detected by the second light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light). Next, a first green pass filter permeable only to light in a green wavelength range and an infrared wavelength range is formed to cover the first light-receiving element, while a second green pass filter similar to the first green filter is formed to cover the second light-receiving element. In addition, a red pass filter permeable only to light in a red wavelength range and the infrared wavelength range is formed to cover the second light-receiving element.

摘要翻译： 本发明提供一种用于测量光分量的可见光波长范围的亮度的半导体器件及其制造方法，其制造成本降低。 第一光接收元件和第二光接收元件形成在半导体衬底中。 然后，形成运算电路，其计算与由第一受光元件检测出的光量相对应的电流值（即，表示相对于光的相对灵敏度的电流值） ）和与由第二受光元件检测到的光量相对应的电流值（即，相对于光的相对灵敏度的电流值）。 接下来，形成可以仅透过绿色波长范围和红外线波长范围的光的第一绿色通过滤光片，以覆盖第一光接收元件，同时形成与第一绿色滤光片相似的第二绿色通过滤光片以覆盖第二光接收元件 光接收元件。 此外，形成仅透过红色波长范围的光和红外线波长范围的红色滤光片，以覆盖第二光接收元件。

公开(公告)号：US20080265441A1

公开(公告)日：2008-10-30

申请号：US12104516

申请日：2008-04-17

申请人： Kazuo Okada ,  Hiroyuki Shinogi ,  Yoshinori Seki ,  Hiroshi Yamada

发明人： Kazuo Okada ,  Hiroyuki Shinogi ,  Yoshinori Seki ,  Hiroshi Yamada

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L24/97 ,  H01L24/05 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L27/14618 ,  H01L27/14683 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12043 ,  H01L2924/15311 ,  H01L2924/00

摘要： The invention enhances moisture resistance between a supporting body and an adhesive layer to enhance the reliability of a semiconductor device. A semiconductor device of the invention has a first insulation film formed on a semiconductor element, a first wiring formed on the first insulation film, a supporting body formed on the semiconductor element with an adhesive layer being interposed therebetween, a third insulation film covering the back surface of the semiconductor element onto the side surface thereof and the side surface of the adhesive layer, a second wiring connected to the first wiring and extending onto the back surface of the semiconductor element with the third insulation film being interposed therebetween, and a protection film formed on the second wiring.

摘要翻译： 本发明提高了支撑体和粘合剂层之间的耐湿性，以提高半导体器件的可靠性。 本发明的半导体器件具有形成在半导体元件上的第一绝缘膜，形成在第一绝缘膜上的第一布线，形成在半导体元件上的支撑体，其间夹有粘合剂层，覆盖背面的第三绝缘膜 半导体元件的侧表面和粘合剂层的侧表面上的第二布线，连接到第一布线并且延伸到半导体元件的背表面上并且第三绝缘膜插入其间的第二布线，以及保护膜 形成在第二布线上。

公开(公告)号：US07759779B2

公开(公告)日：2010-07-20

申请号：US12104516

申请日：2008-04-17

申请人： Kazuo Okada ,  Hiroyuki Shinogi ,  Yoshinori Seki ,  Hiroshi Yamada

发明人： Kazuo Okada ,  Hiroyuki Shinogi ,  Yoshinori Seki ,  Hiroshi Yamada

IPC分类号： H01L23/02

CPC分类号： H01L24/97 ,  H01L24/05 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L27/14618 ,  H01L27/14683 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12043 ,  H01L2924/15311 ,  H01L2924/00

摘要： The invention enhances moisture resistance between a supporting body and an adhesive layer to enhance the reliability of a semiconductor device. A semiconductor device of the invention has a first insulation film formed on a semiconductor element, a first wiring formed on the first insulation film, a supporting body formed on the semiconductor element with an adhesive layer being interposed therebetween, a third insulation film covering the back surface of the semiconductor element onto the side surface thereof and the side surface of the adhesive layer, a second wiring connected to the first wiring and extending onto the back surface of the semiconductor element with the third insulation film being interposed therebetween, and a protection film formed on the second wiring.

摘要翻译： 本发明提高了支撑体和粘合剂层之间的耐湿性，以提高半导体器件的可靠性。 本发明的半导体器件具有形成在半导体元件上的第一绝缘膜，形成在第一绝缘膜上的第一布线，形成在半导体元件上的支撑体，其间夹有粘合剂层，覆盖背面的第三绝缘膜 半导体元件的侧表面和粘合剂层的侧表面上的第二布线，连接到第一布线并且延伸到半导体元件的背表面上并且第三绝缘膜插入其间的第二布线，以及保护膜 形成在第二布线上。

公开(公告)号：US20080277793A1

公开(公告)日：2008-11-13

申请号：US12111383

申请日：2008-04-29

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

IPC分类号： H01L23/485 ,  H01L21/768 ,  H01L21/58

CPC分类号： H01L23/3114 ,  H01L21/6835 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00

摘要： A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.

摘要翻译： 提供了一种具有改善的耐湿性的半导体器件及其制造方法以及简化制造工艺并提高生产率的半导体器件的制造方法。 本发明提供一种CSP型半导体器件及其制造方法，其可以通过用厚保护层覆盖半导体芯片的侧表面来防止水分等渗入其中以获得高可靠性。 本发明还提供了一种高效率的半导体器件的制造方法，通过该半导体器件，从支撑体的背面侧蚀刻与半导体晶片接合的支撑体，使得可以在不切割的情况下分离半导体器件。

公开(公告)号：US20060270093A1

公开(公告)日：2006-11-30

申请号：US11492044

申请日：2006-07-25

申请人： Takashi Noma ,  Akira Suzuki ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Akira Suzuki ,  Hiroyuki Shinogi

IPC分类号： H01L21/00

CPC分类号： H01L24/02 ,  H01L21/76898 ,  H01L23/3114 ,  H01L25/0657 ,  H01L27/14806 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06565 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

摘要： A stacked MCM is manufactured at reduced cost without using expensive apparatus. A first wiring and a second wiring are formed on a surface of a semiconductor chip of a first semiconductor device through an insulation film. A glass substrate having an opening to expose the second wiring is bonded to the surface of the semiconductor chip on which the first wiring and the second wiring are formed. A third wiring is disposed on a back surface and a side surface of the semiconductor chip through an insulation film and connected to the first wiring. And a conductive terminal of another semiconductor device is connected to the second wiring through the opening.

公开(公告)号：US20050176235A1

公开(公告)日：2005-08-11

申请号：US11035399

申请日：2005-01-14

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/485 ,  H01L25/065 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/12044

摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

公开(公告)号：US07969007B2

公开(公告)日：2011-06-28

申请号：US12111383

申请日：2008-04-29

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

IPC分类号： H01L23/485

CPC分类号： H01L23/3114 ,  H01L21/6835 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00

摘要： A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.

摘要翻译： 提供了一种具有改善的耐湿性的半导体器件及其制造方法以及简化制造工艺并提高生产率的半导体器件的制造方法。 本发明提供一种CSP型半导体器件及其制造方法，其可以通过用厚保护层覆盖半导体芯片的侧表面来防止水分等渗入其中以获得高可靠性。 本发明还提供了一种高效率的半导体器件的制造方法，通过该半导体器件，从支撑体的背面侧蚀刻与半导体晶片接合的支撑体，使得可以在不切割的情况下分离半导体器件。

公开(公告)号：US20080265424A1

公开(公告)日：2008-10-30

申请号：US12133171

申请日：2008-06-04

申请人： Takashi NOMA ,  Hiroyuki Shinogi ,  Yukihiro Takao

发明人： Takashi NOMA ,  Hiroyuki Shinogi ,  Yukihiro Takao

IPC分类号： H01L23/488

CPC分类号： H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/15788 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

摘要翻译： 本发明的半导体器件的制造方法包括通过第一氧化膜在Si衬底上形成金属焊盘，将Si衬底和支撑衬底接合，通过接合膜固定Si衬底，通过蚀刻Si衬底形成开口 然后在Si衬底的后表面和开口中形成第二氧化物膜，在蚀刻第二氧化膜之后形成连接到金属焊盘的布线，在布线上形成导电端子，从导电端子的背面切割 Si衬底到所述接合膜并分离所述Si衬底和所述保持衬底。

公开(公告)号：US07271466B2

公开(公告)日：2007-09-18

申请号：US11206146

申请日：2005-08-18

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Nobuyuki Takai ,  Katsuhiko Kitagawa ,  Ryoji Tokushige ,  Takayasu Otagaki ,  Tatsuya Ando ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Nobuyuki Takai ,  Katsuhiko Kitagawa ,  Ryoji Tokushige ,  Takayasu Otagaki ,  Tatsuya Ando ,  Mitsuru Okigawa

IPC分类号： H01L29/40

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/13 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

摘要： Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

摘要翻译： 具有球形导电端子的BGA（球栅阵列）型半导体器件降低了成本并提高了可靠性。 第一布线形成在形成在半导体管芯的表面上的绝缘膜上。 在半导体管芯的表面上接合玻璃基板，半导体管芯的侧表面和背面被绝缘膜覆盖。 第二布线连接到第一布线的侧表面或后表面并在半导体管芯的后表面上延伸。 导电端子如凸块形成在第二布线上。