公开(公告)号：US6037273A

公开(公告)日：2000-03-14

申请号：US33391

申请日：1998-03-02

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C01B13/32 ,  H01L21/316 ,  H01L21/02

CPC分类号： H01L21/02238 ,  C01B13/322 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

公开(公告)号：US09870919B2

公开(公告)日：2018-01-16

申请号：US13864849

申请日：2013-04-17

申请人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

发明人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/0262 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

公开(公告)号：US08663390B2

公开(公告)日：2014-03-04

申请号：US13175499

申请日：2011-07-01

申请人： David Keith Carlson ,  Satheesh Kuppurao ,  Howard Beckford ,  Herman Diniz ,  Kailash Kiran Patalay ,  Brian Hayes Burrows ,  Jeffrey Ronald Campbell ,  Zouming Zhu ,  Xiaowei Li ,  Errol Antonio Sanchez

发明人： David Keith Carlson ,  Satheesh Kuppurao ,  Howard Beckford ,  Herman Diniz ,  Kailash Kiran Patalay ,  Brian Hayes Burrows ,  Jeffrey Ronald Campbell ,  Zouming Zhu ,  Xiaowei Li ,  Errol Antonio Sanchez

IPC分类号： C23C16/452 ,  C23C16/46 ,  C23F1/00 ,  H01L21/306 ,  C23C16/02 ,  C23C16/06

CPC分类号： C23C16/455 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T137/0318

摘要： A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.

摘要翻译： 提供了一种用于将前体材料输送到处理室的方法和装置。 在一个实施例中，提供了沉积设备。 该装置包括具有纵向轴线的腔室和联接到腔室的侧壁的气体分配组件。 气体分配组件包括耦合到一个或多个气体源的多个增压室，被定位成向多个增压室中的每一个提供能量的能量源以及耦合到该能量源的可变电源，其中该气体分配组件提供一个 通过腔室的流动通道，其垂直于腔室的纵向轴线。

公开(公告)号：US07976634B2

公开(公告)日：2011-07-12

申请号：US11937388

申请日：2007-11-08

申请人： David Keith Carlson ,  Satheesh Kuppurao ,  Howard Beckford ,  Herman Diniz ,  Kailash Kiran Patalay ,  Brian Hayes Burrows ,  Jeffrey Ronald Campbell ,  Zouming Zhu ,  Xiaowei Li ,  Errol Antonio Sanchez

发明人： David Keith Carlson ,  Satheesh Kuppurao ,  Howard Beckford ,  Herman Diniz ,  Kailash Kiran Patalay ,  Brian Hayes Burrows ,  Jeffrey Ronald Campbell ,  Zouming Zhu ,  Xiaowei Li ,  Errol Antonio Sanchez

IPC分类号： C23C16/452 ,  C23C16/46 ,  C23C16/02 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06

CPC分类号： C23C16/455 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T137/0318

摘要： A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.

摘要翻译： 描述了将前体材料输送到处理室的方法和装置。 该装置包括具有多个气体输送区的气体分配组件。 每个区域可以包括具有用于接收前体气体的入口和至少一个非热能源的诸如红外光源的气室。 可以改变至少一个非热能源，以控制来自红外光源的波长的强度。

公开(公告)号：US20110155058A1

公开(公告)日：2011-06-30

申请号：US12967576

申请日：2010-12-14

申请人： David K. Carlson ,  Errol Sanchez ,  Herman Diniz ,  Satheesh Kuppurao

发明人： David K. Carlson ,  Errol Sanchez ,  Herman Diniz ,  Satheesh Kuppurao

IPC分类号： B05C13/02 ,  C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/46 ,  C23C16/52 ,  C30B25/105 ,  C30B25/12

摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, an apparatus for processing a substrate may include a substrate support having a base having a convex surface, an annular ring disposed on the base, and an edge ring disposed on the annular ring to support a substrate, wherein the base, annular ring, and edge ring form a radiant cavity capable of reflecting energy radiated from a backside of a substrate when disposed on the edge ring and wherein the backside of the substrate faces the convex surface of the base. Alternatively or in combination, in some embodiments, the base may include a metal layer encapsulated between a transparent non-metal upper layer and a non-metal lower layer.

摘要翻译： 本文公开了处理衬底的方法和设备。 在一些实施例中，用于处理衬底的装置可以包括具有底部的衬底支撑件，其具有凸形表面，设置在基座上的环形环和设置在环形环上以支撑衬底的边缘环，其中， 环和边缘环形成辐射腔，其能够在布置在边缘环上时反射从衬底的背面辐射的能量，并且其中衬底的背面朝向基底的凸面。 或者或组合地，在一些实施方案中，碱可以包括封装在透明非金属上层和非金属下层之间的金属层。

公开(公告)号：US07967911B2

公开(公告)日：2011-06-28

申请号：US11697937

申请日：2007-04-09

申请人： David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

发明人： David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

IPC分类号： C23C16/448 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4482

摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。

公开(公告)号：US07560352B2

公开(公告)日：2009-07-14

申请号：US11378101

申请日：2006-03-17

申请人： David K. Carlson ,  Satheesh Kuppurao ,  Errol Antonio C. Sanchez ,  Howard Beckford ,  Yihwan Kim

发明人： David K. Carlson ,  Satheesh Kuppurao ,  Errol Antonio C. Sanchez ,  Howard Beckford ,  Yihwan Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/7834 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76243 ,  H01L21/823814 ,  H01L21/8249 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848 ,  Y10S438/969

摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.

摘要翻译： 在衬底表面上外延形成含硅材料的方法通过调节处理室的温度和压力，利用含卤素气体作为蚀刻气体以及载气。 使用HCl作为含卤素气体是有利的，因为通过调节室压力可以容易地将HCl从载气转化为蚀刻气体。

公开(公告)号：US07494545B2

公开(公告)日：2009-02-24

申请号：US11346804

申请日：2006-02-03

申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

IPC分类号： C30B25/12

CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。

公开(公告)号：US06410456B1

公开(公告)日：2002-06-25

申请号：US09718443

申请日：2000-11-21

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C23C16455

CPC分类号： C01B13/322 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

公开(公告)号：US09058988B2

公开(公告)日：2015-06-16

申请号：US12717266

申请日：2010-03-04

申请人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

发明人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/24

CPC分类号： H01L21/02538 ,  C23C16/0245 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02661

摘要： Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.

摘要翻译： 本文公开了沉积具有减小的界面污染的层的方法。 本发明的方法可以有利地减少沉积层之间的界面处的污染，例如沉积层和下面的基底或膜之间的污染。 在一些实施例中，沉积层的方法可以包括在还原气氛中退火其上设置有第一层的含硅层; 使用蚀刻工艺除去第一层，以在退火后露出含硅层; 以及在暴露的含硅层上沉积第二层。