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    Submount and semiconductor device
    21.
    发明申请
    Submount and semiconductor device 有权
    底座和半导体器件

    公开(公告)号：US20050167679A1

    公开(公告)日：2005-08-04

    申请号：US10512828

    申请日：2003-04-24

    申请人： Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

    发明人： Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

    IPC分类号： H01L21/52 ,  H01L23/488 ,  H01S5/02 ,  H01S5/022 ,  H01S5/024 ,  H01L27/15

    CPC分类号： H01S5/02236 ,  H01L23/488 ,  H01L33/62 ,  H01L2224/83192 ,  H01S5/02272 ,  H01S5/02476

    摘要： A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.

    摘要翻译： 底座可以在其上安装具有高粘结强度的半导体发光器件，并且半导体单元结合了底座。 所述基座包括（a）副安装座基板，（b）形成在所述副安装座基板的顶表面处的焊料层，以及（c）形成在所述副安装座基板和所述焊料层之间的焊料紧密接触层， 堆积了主要由至少一种类型的过渡元素组成的过渡元素层和主要由至少一种贵金属组成的贵金属层的结构。 在上述结构中，过渡元素层形成在基座侧基板侧。 半导体单元设置有安装在基座的焊料层上的半导体发光器件。

    Diamond-LiTaO.sub.3 surface acoustic wave device
    25.
    发明授权
    Diamond-LiTaO.sub.3 surface acoustic wave device 失效
    Diamond-LiTaO3弹性表面波装置

    公开(公告)号：US5646468A

    公开(公告)日：1997-07-08

    申请号：US660902

    申请日：1996-06-07

    申请人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo ,  Shin-ichi Shikata

    发明人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo ,  Shin-ichi Shikata

    IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H9/00 ,  H01L41/08

    CPC分类号： H03H9/02582

    摘要： The present invention directed to a SAW device comprising a diamond layer and an LiTaO.sub.3 layer, which can be operated at the frequency of 3 GHz or higher, with superior durability and less energy loss. The SAW device for 1st mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: a diamond layer, an interdigital transducer formed onto the diamond layer, and a polycrystalline C-axis-oriented LiTaO.sub.3 layer formed over the interdigital transducer; wherein the SAW device satisfies a relationship of 0.4.ltoreq.kh.sub.1 .ltoreq.1.2, where a parameter kh.sub.1 is defined as kh.sub.1 =2.pi.(t.sub.1 /.lambda.), and t.sub.1 (.mu.m) is the thickness of the LiTaO.sub.3 layer.

    摘要翻译： 本发明涉及一种包括金刚石层和LiTaO 3层的SAW器件，其可以以3GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。 根据本发明的波长λ（μm）的第一模式表面声波的SAW器件包括：金刚石层，形成在金刚石层上的叉指换能器，以及形成在该金刚石层上的多晶C轴取向的LiTaO 3层 叉指换能器 其中所述SAW器件满足0.4≤kh1≤1.2的关系，其中参数kh1被定义为kh1 =2π（t1 /λ），并且t1（μm）是LiTaO3层的厚度。

    Superconducting microwave parts having a package, two substrates, and line and grounding conductors
    26.
    发明授权
    Superconducting microwave parts having a package, two substrates, and line and grounding conductors 失效
    超导微波部件具有封装，两个基板以及线和接地导体

    公开(公告)号：US5496797A

    公开(公告)日：1996-03-05

    申请号：US353344

    申请日：1994-12-05

    申请人： Kenjiro Higaki ,  Hideo Itozaki

    发明人： Kenjiro Higaki ,  Hideo Itozaki

    IPC分类号： H01L39/22 ,  H01L39/14 ,  H01P3/08 ,  H01P7/08 ,  H01P11/00 ,  H01B12/06

    CPC分类号： H01P7/082 ,  H01L39/143 ,  H01P7/084 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

    摘要： There is disclosed a superconducting microwave component including a first substrate having a conductor line formed of an oxide superconductor on the surface thereof, a second substrate having a grounding conductor formed of an oxide superconductor on the surface thereof, and a package of a conducting material housing the first and the second substrates so that they are substantially parallel with each other. At least one portion of the grounding conductor is in contact with the inside of the package, through surface contact.

    摘要翻译： 公开了一种超导微波部件，其包括：第一基板，具有在其表面上由氧化物超导体形成的导体线;第二基板，具有由其表面上的氧化物超导体形成的接地导体;以及封装导电材料壳体 第一和第二基板，使得它们基本上彼此平行。 接地导体的至少一部分通过表面接触与封装的内部接触。

    Surface acoustic wave device and method of manufacturing the same
    27.
    发明授权
    Surface acoustic wave device and method of manufacturing the same 失效
    表面声波装置及其制造方法

    公开(公告)号：US5426340A

    公开(公告)日：1995-06-20

    申请号：US188536

    申请日：1994-01-27

    申请人： Kenjiro Higaki ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Shinichi Shikata

    发明人： Kenjiro Higaki ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Shinichi Shikata

    IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/64 ,  H01L41/08

    CPC分类号： H03H9/02582

    摘要： A surface acoustic wave device includes a hard layer comprising diamond or a diamond-like carbon film, and a piezoelectric layer formed on the hard layer. It further includes a paired interdigital transducer and grounding electrode, which perform an electro-mechanical conversion, with the piezoelectric layer arranged therebetween. Then, the feature of the present invention is to form the grounding electrode of a conductive oxide. It is preferred that the conductive oxide is formed by doping an impurity into a piezoelectric material of ZnO. Therefore, the adhesion between the piezoelectric layer and the hard layer, and the grounding electrodes is increased, so that the device yield is enhanced, and a high electromechanical coupling coefficient can be achieved in a high frequency range.

    摘要翻译： 表面声波装置包括由金刚石或类金刚石碳膜构成的硬质层和形成在硬质层上的压电层。 它还包括一个成对的叉指式换能器和接地电极，它们进行机电转换，压电层位于它们之间。 然后，本发明的特征在于形成导电氧化物的接地电极。 优选的是，通过将杂质掺杂到ZnO的压电材料中形成导电氧化物。 因此，压电层与硬质层和接地电极之间的粘附性增加，从而提高了器件成品率，并且可以在高频范围内实现高的机电耦合系数。

    Member for semiconductor device
    28.
    发明申请
    Member for semiconductor device 审中-公开
    半导体器件成员

    公开(公告)号：US20060102373A1

    公开(公告)日：2006-05-18

    申请号：US10520923

    申请日：2003-07-07

    申请人： Kazuya Kamitake ,  Yugaku Abe ,  Kenjiro Higaki

    发明人： Kazuya Kamitake ,  Yugaku Abe ,  Kenjiro Higaki

    IPC分类号： H01L23/02

    CPC分类号： H01L23/06 ,  H01L23/04 ,  H01L23/3732 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/16152

    摘要： There is provided a member for a semiconductor device, such as a substrate, having an excellent resin bonding property capable of improving resin bonding strength at the time the member for a semiconductor device being bonded with resin and maintaining a high resin bonding strength even after various reliability tests, such as a thermal cycling test, are performed. The member for a semiconductor device comprises a base member 1 made of an alloy or composite mainly composed of Cu and W and/or Mo, an alloy or composite mainly composed of Al—SiC, or an alloy or composite mainly composed of Si—SiC. A coating layer made of a hard carbon film 2 is provided on at least a surface of the base member 1 on which at least another member for the semiconductor device, such as a package, is bonded with a resin. It is preferable that the base member 1 have a surface roughness of 0.1 to 20 μm in Rmax. It is preferable that the hard carbon film 2 have a thickness of 0.1 to 10 μm.

    摘要翻译： 提供了一种半导体器件（例如基板）的构件，其具有优异的树脂粘合特性，能够提高半导体器件与树脂粘合的部件时的树脂粘合强度，并且即使在各种之后也保持高的树脂粘合强度 进行可靠性测试，例如热循环测试。 半导体器件的构件包括由主要由Cu和W和/或Mo组成的合金或复合材料，主要由Al-SiC组成的合金或复合材料或主要由Si-SiC组成的合金或复合材料制成的基底构件1 。 在基材1的至少一个表面上设置由硬质碳膜2构成的涂层，其中至少另外用于半导体器件的诸如封装的部件用树脂粘合。 优选的是，在Rmax中，基材1的表面粗糙度为0.1〜20μm。 硬碳膜2的厚度优选为0.1〜10μm。