Abstract:
The present invention relates to a process for producing a catalyst for carrying out methanation reactions. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds brought into contact with one another are intimately mixed, thermally treated so that the metal salt fraction melts and subsequently subjected to a low-temperature calcination step and a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises/contains nickel nitrate hexahydrate. The hydrotalcite-comprising starting material is preferably hydrotalcite or a hydrotalcite-like compound as starting material, and the hydrotalcite-comprising starting material preferably comprises magnesium and aluminum as metal species.The catalyst of the invention is preferably used for carrying out methanation reactions at elevated pressures (from 10 to 50 bar) and elevated temperatures.
Abstract:
A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Abstract:
Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
Abstract:
The hand-held power tool has a vibration-damped main handle. The hand-held power tool has a device for fastening the main handle to a main element configured so that when the main element moves out of a stationary position toward the main handle the main element swivels around at least one swivel axis so that it is guided along a trajectory that extends with a slant of at least 10° relative to a flat surface, which extends through a longitudinal tool axis and which has a surface normal oriented in a normal direction perpendicular to the longitudinal tool axis. As a result vibrations with a movement component perpendicular to the longitudinal tool axis are damped as well as vibrations that induce motion of the main element in the direction of the longitudinal tool axis toward the main handle.
Abstract:
An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.
Abstract:
The invention relates to a hand tool machine, particularly a drill and/or chisel hammer, having a striking unit comprising at least one hammer and one striking element, and having a damping device for the striking element for damping a B-strike of the striking element against a striking unit. The invention proposes that the damping device have at least one axial overlap region with the hammer in at least one operating mode.
Abstract:
A handle for an electric hand tool, which in use, is detachably connected to the hand tool as an auxiliary handle (2), includes at least one detection device (6), which communicates with at least one regulating and/or control element in the electric hand tool through a contactless signal transmission device.
Abstract:
A chuck is described, in particular for a hammer drill or chisel hammer, having a chuck body having an insertion opening for holding a tool shank, and a locking element for axially locking the tool shank in the insertion opening, the locking element being movable betveen a locked position and an unlocked position, and having an arresting pin, mounted in the locking element and radially displaceable between an arresting position and a release position, which axially arrests the locking element in its arresting position and axially releases it in its release position.
Abstract:
The present invention relates to a process for producing a catalyst for carrying out methanation reactions. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds brought into contact with one another are intimately mixed, thermally treated so that the metal salt fraction melts and subsequently subjected to a low-temperature calcination step and a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises/contains nickel nitrate hexahydrate. The hydrotalcite-comprising starting material is preferably hydrotalcite or a hydrotalcite-like compound as starting material, and the hydrotalcite-comprising starting material preferably comprises magnesium and aluminum as metal species.The catalyst of the invention is preferably used for carrying out methanation reactions at elevated pressures (from 10 to 50 bar) and elevated temperatures.
Abstract:
An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.