公开(公告)号：US07126186B2

公开(公告)日：2006-10-24

申请号：US10324823

申请日：2002-12-20

申请人： Hans Weber ,  Armin Willmeroth ,  Uwe Wahl ,  Markus Schmitt

发明人： Hans Weber ,  Armin Willmeroth ,  Uwe Wahl ,  Markus Schmitt

IPC分类号： H10L21/336 ,  H01L31/062

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/41766 ,  H01L2924/0002 ,  H01L2924/00

摘要： A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity type disposed in the drift zone. Higher doped zones of the first type are inlaid in a weaker doped environment of the second type closer to the first electrode and higher doped zones of the second type are inlaid in a weaker doped environment of the first type closer to the second electrode. The drift zone is complementary so that, in a direction between the electrodes, a more highly doped zone of the first type adjoins a more weakly doped environment of the first type, and a more weakly doped environment of the second type adjoins a more highly doped zone of the second type.

公开(公告)号：US20050029581A1

公开(公告)日：2005-02-10

申请号：US10654683

申请日：2003-09-04

申请人： Gerald Deboy ,  Uwe Wahl ,  Armin Willmeroth

发明人： Gerald Deboy ,  Uwe Wahl ,  Armin Willmeroth

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/808 ,  H01L29/76 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/7838 ,  H01L29/8083

摘要： A semiconductor component has at least one first terminal zone of a first conductivity type in a semiconductor body. The first terminal zone is contact-connected by a first terminal electrode. A drift zone of the first conductivity type is adjoined by a second terminal zone of the second conductivity type. A channel zone of a second conductivity type is formed between the at least one first terminal zone and the drift zone. A control electrode is insulated from the semiconductor body and adjacent to the channel zone. A first channel is formed by the channel zone in a region adjacent to the control electrode, the first channel conducts only upon application of a control voltage that is not equal to zero between the control electrode and the first terminal zone. The first terminal electrode is connected to the drift zone via at least one second channel of the first conductivity type, which already conducts in the event of a control voltage equal to zero.

摘要翻译： 半导体部件在半导体本体中具有至少一个第一导电类型的第一端子区域。 第一端子区由第一端子电极接触连接。 第一导电类型的漂移区由第二导电类型的第二端区连接。 在所述至少一个第一端子区域和所述漂移区域之间形成第二导电类型的沟道区域。 控制电极与半导体本体绝缘并且与沟道区相邻。 第一通道由与控制电极相邻的区域中的通道区形成，第一通道仅在控制电极和第一端子区域之间施加不等于零的控制电压时才导通。 第一端子电极经由至少一个第一导电类型的第二沟道连接到漂移区，其在控制电压等于零的情况下已经导通。

公开(公告)号：US09741601B2

公开(公告)日：2017-08-22

申请号：US12399046

申请日：2009-03-06

申请人： Martin Feldtkeller ,  Uwe Wahl

发明人： Martin Feldtkeller ,  Uwe Wahl

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L23/50 ,  H01L27/06 ,  H01L31/153 ,  H01L23/00 ,  H01L21/8238 ,  H01L23/495 ,  H01L23/522 ,  H01L27/08

CPC分类号： H01L21/76224 ,  H01L21/823878 ,  H01L23/495 ,  H01L23/50 ,  H01L23/5227 ,  H01L24/24 ,  H01L27/0623 ,  H01L27/08 ,  H01L31/153 ,  H01L2924/07802 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

摘要： Semiconductor component comprising at least two semiconductor regions are disclosed. In one embodiment the semiconductor regions of the semiconductor component are electrically isolated from one another by an insulator, and a deposited, patterned, metallic layer extends over the semiconductor regions and over the insulator.

公开(公告)号：US08614616B2

公开(公告)日：2013-12-24

申请号：US13008591

申请日：2011-01-18

申请人： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

发明人： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC分类号： H01F5/00 ,  H01F27/28

CPC分类号： H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

摘要翻译： 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二半导体芯片。

公开(公告)号：US20130307058A1

公开(公告)日：2013-11-21

申请号：US13475302

申请日：2012-05-18

申请人： Uwe Wahl ,  Franz Hirler ,  Hans Weber

发明人： Uwe Wahl ,  Franz Hirler ,  Hans Weber

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/20

CPC分类号： H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66143 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A superjunction structure in the semiconductor body includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface. Each of the charge compensation structures includes a first semiconductor region of a second conductivity type complementary to the first conductivity type and a first trench including a second semiconductor region of the second conductivity type adjoining the first semiconductor region. The first semiconductor region and the first trench are disposed one after another in a second direction perpendicular to the first surface.

摘要翻译： 半导体器件包括具有第一表面和与第一表面相对的第二表面的半导体本体。 半导体主体中的超结构结构包括第一导电类型的漂移区域和在与第一表面平行的第一方向上交替设置的补偿结构。 每个电荷补偿结构包括与第一导电类型互补的第二导电类型的第一半导体区域和包括与第一半导体区域相邻的第二导电类型的第二半导体区域的第一沟槽。 第一半导体区域和第一沟槽在垂直于第一表面的第二方向上依次布置。

公开(公告)号：US08431988B2

公开(公告)日：2013-04-30

申请号：US11262483

申请日：2005-10-28

申请人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

发明人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

IPC分类号： H01L29/66

CPC分类号： H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

摘要翻译： 横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。 重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

公开(公告)号：US20120181874A1

公开(公告)日：2012-07-19

申请号：US13008591

申请日：2011-01-18

申请人： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

发明人： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC分类号： H01F38/14 ,  H01L21/50 ,  H01L23/52

CPC分类号： H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

摘要翻译： 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。

公开(公告)号：US20120080770A1

公开(公告)日：2012-04-05

申请号：US12895430

申请日：2010-09-30

申请人： Uwe Wahl

发明人： Uwe Wahl

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L23/5227 ,  H01F2019/085 ,  H01L23/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L28/10 ,  H01L29/0657 ,  H01L2224/32145 ,  H01L2224/83192 ,  H01L2225/06531

摘要： A transformer arrangement and a method for producing a transformer arrangement is disclosed.

摘要翻译： 公开了一种用于制造变压器装置的变压器装置和方法。

公开(公告)号：US20110115007A1

公开(公告)日：2011-05-19

申请号：US12962791

申请日：2010-12-08

申请人： Uwe Wahl ,  Armin Willmeroth

发明人： Uwe Wahl ,  Armin Willmeroth

IPC分类号： H01L29/78

CPC分类号： H01L29/402 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7817 ,  H01L29/7823

摘要： A lateral power semiconductor component has a front side, a rear side and a lateral edge. The component further includes a drift zone of a first conductivity type, a source zone of the first conductivity type, a body zone of a second conductivity type opposite the first conductivity type, and a drain zone of the first conductivity type. A gate forms a MOS structure with the drift zone, the source zone and the body zone. A horizontally extending field plate above each semiconductor region of the power semiconductor component forms a plate capacitor structure with an edge plate lying under the field plate. The edge plate includes a highly doped semiconductor material and is electrically connected to one of a source potential and a drain potential of the power semiconductor component.

摘要翻译： 横向功率半导体部件具有前侧，后侧和侧边。 该部件还包括第一导电类型的漂移区，第一导电类型的源区，与第一导电类型相反的第二导电类型的体区和第一导电类型的漏区。 门形成具有漂移区，源区和体区的MOS结构。 在功率半导体部件的每个半导体区域上方的水平延伸的场板形成板状电容器结构，边缘板位于场板下。 边缘板包括高度掺杂的半导体材料，并且电连接到功率半导体部件的源极电位和漏极电位之一。

公开(公告)号：US07554157B2

公开(公告)日：2009-06-30

申请号：US11527760

申请日：2006-09-26

申请人： Uwe Wahl ,  Ralf Rudolf ,  Dirk Priefert

发明人： Uwe Wahl ,  Ralf Rudolf ,  Dirk Priefert

IPC分类号： H01L27/12 ,  H01L29/76

CPC分类号： H01L29/78624 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/7818 ,  H01L29/7824 ,  H01L29/78639 ,  H01L29/861

摘要： An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.

摘要翻译： SOI半导体部件包括具有基本掺杂的半导体衬底，布置在半导体衬底上的电介质层和布置在电介质层上的半导体层。 半导体层包括第一导电类型的漂移区域，漂移区域和另一组件区域之间的结，该区域构造成使得当反向电压施加到漂移区域时在漂移区域中形成空间电荷区域 结和与漂移区相邻的终端区。 第一端子电极连接到另一组件区域，并且第二端子电极连接到端子区域。 在半导体衬底中，第一半导体区相对于半导体衬底的基本掺杂互补地掺杂，并且第一端电极连接到第一半导体区。 整流元件连接在第一端子电极和第一半导体区域之间。