中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

45 records (took 0.02 seconds)

    Wavelength tunable external cavity laser beam generating device
    21.
    发明授权
    Wavelength tunable external cavity laser beam generating device 有权
    波长可调外腔激光束发生装置

    公开(公告)号：US08363685B2

    公开(公告)日：2013-01-29

    申请号：US13016238

    申请日：2011-01-28

    Applicant: Hyun Soo Kim ,  Ki-Hong Yoon ,  Kisoo Kim ,  Byung-Seok Choi ,  O-Kyun Kwon

    Inventor： Hyun Soo Kim ,  Ki-Hong Yoon ,  Kisoo Kim ,  Byung-Seok Choi ,  O-Kyun Kwon

    IPC: H01S3/10

    CPC classification number: H01S5/142 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34306

    Abstract: Provided is a wavelength tunable external cavity laser (laser beam) generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.

    Abstract translation: 提供了一种波长可调谐的外腔激光（激光束）产生装置。 所述波长可调外腔激光产生装置包括：串联在第一基板上的光放大器，梳状反射器和光信号处理器; 以及外部波长可调谐反射器，其设置在与所述第一基板相邻并且连接到所述光学放大器的第二基板上，其中所述梳状反射器包括：布置在所述第一基板上的波导; 设置在与光放大器相邻的波导的一端的第一衍射光栅; 以及第二衍射光栅，其设置在与所述光信号处理器相邻的所述波导的另一端处，其中所述光放大器，所述梳状反射器和所述光信号处理器构成连续波导。

    WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE
    22.
    发明申请
    WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE 审中-公开
    波长可控外部空腔激光发生装置

    公开(公告)号：US20120106578A1

    公开(公告)日：2012-05-03

    申请号：US13241529

    申请日：2011-09-23

    Applicant: Hyun Soo KIM ,  Jong Sool Jeong ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon

    Inventor： Hyun Soo KIM ,  Jong Sool Jeong ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon

    IPC: H01S3/10

    CPC classification number: H01S5/141 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/1032 ,  H01S5/22

    Abstract: A wavelength-tunable external cavity laser generating device is provided. The wavelength-tunable external cavity laser generating device includes a reflection-type multi-mode interferometer, an optical amplifier disposed between the reflection-type multi-mode interferometer and an external wavelength-tunable reflector to amplify light, and an optical signal processor configured to process light from the reflection-type multi-mode interferometer. The reflection-type multi-mode interferometer includes a multi-mode waveguide, an input waveguide connecting the optical amplifier and one end of the multi-mode waveguide, and an output waveguide configured to connect the optical signal processor and the other end of the multi-mode waveguide.

    Abstract translation: 提供了一种波长可调谐的外腔激光产生装置。 波长可调谐外腔激光发生装置包括反射型多模干涉仪，设置在反射型多模干涉仪和外部波长可调反射体之间以放大光的光放大器;以及光信号处理器， 来自反射型多模干涉仪的处理光。 反射型多模干涉仪包括多模波导，连接光放大器和多模波导的一端的输入波导，以及输出波导，其被配置为连接光信号处理器和多光波导的另一端 模式波导。

    OPTICAL DEVICE MODULE
    23.
    发明申请
    OPTICAL DEVICE MODULE 审中-公开
    光学器件模块

    公开(公告)号：US20110134513A1

    公开(公告)日：2011-06-09

    申请号：US12773196

    申请日：2010-05-04

    Applicant: Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

    Inventor： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

    IPC: H01S5/026 ,  G02B6/26 ,  G02B6/42

    CPC classification number: H01S5/0265 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2813 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/50

    Abstract: Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.

    Abstract translation: 提供了可以改善小型化和集成的光学装置模块。 光学器件模块包括具有掩埋结构的半导体光学放大器，并且包括掩埋在第一衬底上的覆盖层中的第一有源层，光调制器，其中第二有源层的侧壁沿着第一有源层 暴露在与第一衬底相交的第二衬底上的层，光学调制器具有脊结构，以及至少一个多模干涉耦合器，其中与第一有源层结合的第二有源层被掩埋在覆盖层中， 所述多模干涉耦合器在所述光调制器和所述半导体光放大器之间的所述第二基板上共享所述第二有源层并与所述第二光学装置集成。

    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME
    25.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME 审中-公开
    半导体集成电路，包括用于光通信的光栅耦合器及其形成方法

    公开(公告)号：US20090154871A1

    公开(公告)日：2009-06-18

    申请号：US12117708

    申请日：2008-05-08

    Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    IPC: G02B6/12 ,  H01L21/02

    CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

    Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

    Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

    Polymer photodetector having resonant wavelength control function
    27.
    发明授权
    Polymer photodetector having resonant wavelength control function 失效
    具有谐振波长控制功能的聚合物光电探测器

    公开(公告)号：US6069353A

    公开(公告)日：2000-05-30

    申请号：US904653

    申请日：1997-08-01

    Applicant: Sang-Don Jung ,  O-Kyun Kwon ,  Tae-Hyoung Zyung

    Inventor： Sang-Don Jung ,  O-Kyun Kwon ,  Tae-Hyoung Zyung

    IPC: H01L31/0216 ,  H01L51/42 ,  H01L31/0248

    CPC classification number: H01L31/02165 ,  H01L27/305 ,  H01L51/42

    Abstract: A polymer photodetector includes a resonant wavelength controller which resonates an optical beam with a particular wavelength only from the incident optical beam received thereinto through the rear surface of the reflection layer, so as to selectively detect the optical beam with the particular wavelength. The resonant wavelength controller includes a fixed mirror layer, a movable mirror layer, and an air layer disposed therebetween. The resonant wavelength can be adjusted by varying an optical length between the movable mirror layer and the fixed mirror layer. The optical length can be adjusted by varying the thickness of the air layer between the movable mirror layer and the fixed mirror layer by way of adjusting the electrostatic force.

    Abstract translation: 聚合物光电检测器包括谐振波长控制器，其谐振具有特定波长的光束仅从其中接收的入射光束通过反射层的后表面谐振，以便选择性地检测具有特定波长的光束。 谐振波长控制器包括固定镜层，可移动镜层和设置在其间的空气层。 可以通过改变可移动镜层和固定镜层之间的光学长度来调节谐振波长。 可以通过调节静电力来改变可移动镜层和固定镜层之间的空气层的厚度来调节光学长度。

    Metal/semiconductor junction Schottky diode optical device using a distortion grown layer
    28.
    发明授权
    Metal/semiconductor junction Schottky diode optical device using a distortion grown layer 失效
    金属/半导体结肖特基二极管光器件使用失真生长层

    公开(公告)号：US5488231A

    公开(公告)日：1996-01-30

    申请号：US352628

    申请日：1994-12-09

    Applicant: O-Kyun Kwon ,  Young-Wan Choi ,  El-Hang Lee

    Inventor： O-Kyun Kwon ,  Young-Wan Choi ,  El-Hang Lee

    IPC: H01L29/47 ,  G02F1/015 ,  G02F3/00 ,  G02F3/02 ,  H01L29/12 ,  H01L29/872 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/108 ,  H01L27/14 ,  H01L31/00

    CPC classification number: H01L31/0352 ,  H01L31/108

    Abstract: A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is formed on the GaAs mirror and AlAs mirror layers. A GaAs buffer layer is formed on the semiconductor layer to grow a Schottky metal layer serving as an electrode and a mirror. A multiple quantum well structure having an electro-optical absorption characteristic is positioned between the semiconductor layer and Schottky metal layer, for constructing a diode with the metal layer/multiple quantum well structure. At least a part of the mirror layers and diode are formed with a layer in order to have resonance and non-resonance conditions between the metal layer and mirror layers. The substrate on which the diode is formed has an opposite side formed with an optical non-reflective layer.

    Abstract translation: 描述了使用失真生长层的金属/半导体结肖特基二极管光学器件。 在半绝缘GaAs衬底上周期性地生长多个GaAs反射镜和AlAs镜层。 在GaAs反射镜和AlAs镜面层上形成n +或p +半导体层。 在半导体层上形成GaAs缓冲层，以生长用作电极和反射镜的肖特基金属层。 具有电光吸收特性的多量子阱结构位于半导体层和肖特基金属层之间，用于构造具有金属层/多量子阱结构的二极管。 镜面层和二极管的至少一部分形成有一层，以便在金属层和镜层之间具有共振和非共振条件。 形成有二极管的基板具有由光学非反射层形成的相对侧。

    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE
    30.
    发明申请
    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE 有权
    波长管外部腔体激光发生装置

    公开(公告)号：US20120093178A1

    公开(公告)日：2012-04-19

    申请号：US13016238

    申请日：2011-01-28

    Applicant: Hyun Soo KIM ,  Ki-Hong YOON ,  Kisoo KIM ,  Byung-Seok CHOI ,  O-Kyun Kwon

    Inventor： Hyun Soo KIM ,  Ki-Hong YOON ,  Kisoo KIM ,  Byung-Seok CHOI ,  O-Kyun Kwon

    IPC: H01S3/10

    CPC classification number: H01S5/142 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34306

    Abstract: Provided is a wavelength tunable external cavity laser generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.

    Abstract translation: 提供了一种波长可调外腔激光产生装置。 所述波长可调外腔激光产生装置包括：串联在第一基板上的光放大器，梳状反射器和光信号处理器; 以及外部波长可调谐反射器，其设置在与所述第一基板相邻并且连接到所述光学放大器的第二基板上，其中所述梳状反射器包括：布置在所述第一基板上的波导; 设置在与光放大器相邻的波导的一端的第一衍射光栅; 以及第二衍射光栅，其设置在与所述光信号处理器相邻的所述波导的另一端处，其中所述光放大器，所述梳状反射器和所述光信号处理器构成连续波导。

Patent Agency Ranking