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    SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING
    21.
    发明申请
    SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING 审中-公开

    公开(公告)号：US20200013922A1

    公开(公告)日：2020-01-09

    申请号：US16553720

    申请日：2019-08-28

    Applicant: Micron Technology, Inc.

    Inventor： Scott D. Schellhammer

    IPC: H01L33/02 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06

    Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

    Solid state lighting devices with dielectric insulation and methods of manufacturing
    22.
    发明授权
    Solid state lighting devices with dielectric insulation and methods of manufacturing 有权

    公开(公告)号：US10439102B2

    公开(公告)日：2019-10-08

    申请号：US15910460

    申请日：2018-03-02

    Applicant: Micron Technology, Inc.

    Inventor： Scott D. Schellhammer

    IPC: H01L33/02 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

    Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

    ETCHED TRENCHES IN BOND MATERIALS FOR DIE SINGULATION, AND ASSOCIATED SYSTEMS AND METHODS
    23.
    发明申请
    ETCHED TRENCHES IN BOND MATERIALS FOR DIE SINGULATION, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开

    公开(公告)号：US20180301602A1

    公开(公告)日：2018-10-18

    申请号：US16008836

    申请日：2018-06-14

    Applicant: Micron Technology, Inc.

    Inventor： Vladimir Odnoblyudov ,  Scott D. Schellhammer ,  Jeremy S. Frei

    IPC: H01L33/52 ,  H01L33/44

    Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially, encapsulated in a dielectric material.

    SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING
    25.
    发明申请
    SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING 有权
    具有介质绝缘的固态照明设备及其制造方法

    公开(公告)号：US20160197231A1

    公开(公告)日：2016-07-07

    申请号：US15069262

    申请日：2016-03-14

    Applicant: Micron Technology, Inc.

    Inventor： Scott D. Schellhammer

    IPC: H01L33/02 ,  H01L33/00 ,  H01L33/06

    CPC classification number: H01L33/025 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

    Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

    Abstract translation: 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态照明装置包括第一半导体材料，与第一半导体材料间隔开的第二半导体材料以及第一和第二半导体材料之间的有源区。 固体照明装置还包括从第二半导体材料朝向有源区域延伸的凹陷以及固态照明结构的凹陷中的第一半导体材料和绝缘材料。

    Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices
    26.
    发明授权
    Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices 有权
    具有光学透射载体衬底和相关系统，方法和装置的固态传感器装置

    公开(公告)号：US09054235B2

    公开(公告)日：2015-06-09

    申请号：US13747182

    申请日：2013-01-22

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Scott D. Schellhammer

    IPC: H01L21/00 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0352 ,  H01L33/00

    CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/14687 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/035209 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

    Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.

    Abstract translation: 具有固态转换器（SST）器件和相关半导体器件，系统的半导体器件组件，并在此公开。 在一个实施例中，形成半导体器件组件的方法包括在支撑衬底和转移结构之间形成支撑衬底，转移结构和多个半导体结构。 该方法还包括去除支撑衬底以暴露各个半导体结构的有源表面和各个半导体结构之间的沟槽。 半导体结构可以附着到光学透射的载体衬底上，使得有源表面可以通过载体衬底发射和/或接收光。 然后可以在移除支撑衬底的情况下在载体衬底上处理各个半导体结构。 在一些实施例中，各个半导体结构从半导体器件组件分离，并且包括连接到每个单个半导体结构的载体衬底的一部分。

    Solid state lighting devices with dielectric insulation and methods of manufacturing
    28.
    发明授权
    Solid state lighting devices with dielectric insulation and methods of manufacturing 有权

    公开(公告)号：US12302667B2

    公开(公告)日：2025-05-13

    申请号：US18473605

    申请日：2023-09-25

    Applicant: Micron Technology, Inc.

    Inventor： Scott D. Schellhammer

    IPC: H10H20/81 ,  H10H20/01 ,  H10H20/812 ,  H10H20/821 ,  H10H20/825

    Abstract: Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

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