公开(公告)号：US20180122997A1

公开(公告)日：2018-05-03

申请号：US15573529

申请日：2016-05-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann

IPC: H01L33/50 ,  H01L33/46 ,  H01L33/48 ,  H01L33/54

CPC classification number: H01L33/502 ,  H01L21/568 ,  H01L25/167 ,  H01L33/007 ,  H01L33/385 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L33/54 ,  H01L2224/04105 ,  H01L2224/19 ,  H01L2224/24 ,  H01L2224/82 ,  H01L2924/18162 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041

Abstract: A method of producing optoelectronic components includes A) providing a carrier and optoelectronic semiconductor chips including contact elements arranged on a contact side of the semiconductor chip; B) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides face the carrier during application; C) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chip not covered by the carrier; D) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; E) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chip into radiation of a different wavelength range; and F) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips.

公开(公告)号：US20180102466A1

公开(公告)日：2018-04-12

申请号：US15561161

申请日：2016-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/20 ,  H01L33/50 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L21/568 ,  H01L25/0753 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/46 ,  H01L33/505 ,  H01L2224/24 ,  H01L2224/48091 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: An optoelectronic semiconductor chip, an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment the chip includes a main body including a carrier having a top, a bottom opposite the top and side faces connecting the bottom with the top and a semiconductor layer sequence arranged on the top of the carrier, wherein the semiconductor layer sequence is configured to emit or absorb electromagnetic radiation and two contact faces arranged on the semiconductor layer sequence. The chip further includes two contact elements contacting the contact faces, wherein the contact elements include conductor tracks which are guided from the contact faces over edges of the main body on the side faces of the carrier.

公开(公告)号：US09831227B2

公开(公告)日：2017-11-28

申请号：US15183867

申请日：2016-06-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann

IPC: H01L33/00 ,  H01L25/16 ,  H01L25/075 ,  H01L33/62 ,  H01L23/538 ,  H01L27/02 ,  H01L31/02 ,  H01S5/022 ,  G01R31/26

CPC classification number: H01L25/167 ,  G01R31/2635 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0753 ,  H01L25/165 ,  H01L27/0255 ,  H01L31/02002 ,  H01L33/62 ,  H01L2224/16 ,  H01S5/02248

Abstract: A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus.

公开(公告)号：US11271143B2

公开(公告)日：2022-03-08

申请号：US17038283

申请日：2020-09-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Laura Kreiner ,  Andreas Leber ,  Siegfried Herrmann ,  Christine Rafael ,  Eva-Maria Rummel ,  Nicole Heitzer ,  Marie Assmann

IPC: H01L33/52 ,  H01L33/50 ,  H01L33/60 ,  H01L33/04 ,  H01L25/075 ,  B60K35/00

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US10943892B2

公开(公告)日：2021-03-09

申请号：US16090795

申请日：2017-04-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann

IPC: H01L33/38 ,  H01L33/52 ,  H01L25/13 ,  H01L33/48 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a light-transmissive substrate having a top surface, a bottom surface opposite the top surface, a first side and a second side surface arranged opposite the first side surface, a semiconductor body arranged on the top surface of the substrate and a contacting including a first current distribution structure and a second current distribution structure, wherein the first current distribution structure and the second current distribution structure are freely accessible from a side of the semiconductor body facing away from the substrate, and wherein the semiconductor chip, on the side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, is free of any connection point configured to electrically contact the first and second current distribution structures.

公开(公告)号：US10886426B2

公开(公告)日：2021-01-05

申请号：US16087646

申请日：2017-03-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Georg Dirscherl ,  Siegfried Herrmann

IPC: H01L33/00 ,  H01L23/00 ,  H01L33/56

Abstract: A method for producing an electronic device and an electronic device are disclosed. In an embodiment a method for producing an electronic device includes attaching semiconductor chips on a carrier, applying a fluoropolymer to main surfaces of the semiconductor chips facing away from the carrier and a main surface of the carrier facing the semiconductor chip thereby forming an encapsulation layer including a fluoropolymer, structuring the encapsulation layer thereby forming cavities in the encapsulation layer and applying a metal layer in the cavities.

公开(公告)号：US10290782B2

公开(公告)日：2019-05-14

申请号：US15573466

申请日：2016-05-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  David O'Brien ,  David Racz

IPC: H01L21/46 ,  H01L33/60 ,  H01L33/46 ,  H01L33/00 ,  H01L33/50 ,  H01L21/56

Abstract: A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on surface are disclosed. In an embodiment, an optoelectronic semiconductor body includes a semiconductor chip having a radiation side and a contact side different from the radiation side, wherein contact elements for electrically contacting the semiconductor body are attached to the contact side, and wherein the contact elements are freely accessible. The body further includes a metal mirror layer disposed on the semiconductor chip, wherein the metal mirror layer has a reflectivity of at least 80% to radiation emitted by the semiconductor chip during operation, wherein the mirror layer is a continuous and contiguous mirror layer, which covers all sides of the semiconductor chip that are not the contact side and the radiation side by at least 95%, and wherein the mirror layer is arranged at the semiconductor chip in a form-fit manner.

公开(公告)号：US10193037B2

公开(公告)日：2019-01-29

申请号：US15120504

申请日：2015-02-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Norwin Von Malm

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/48 ,  H01L25/075 ,  H01L25/00

Abstract: A method for manufacturing an opto-electronic component (100) is given, comprising a provision of a carrier (1) with at least one mounting surface (11), a generation of at least two vias (4) in the carrier (1) with electrically conducting contacts (12, 13) running through the vias (4), a provision of at least one light-emitting semiconductor chip (2), wherein the semiconductor chip (2) comprises a growth substrate (10) and a layer sequence (7) epitaxially grown thereon, a mounting of the at least one semiconductor chip (2) onto the at least one mounting surface (11) of the carrier (1), wherein the semiconductor chip (2) is connected in an electrically conducting manner to the contacts (12, 13) in the same method step during the mounting onto the mounting surface (11), an isolation of the carrier (1) along isolation lines (V), wherein an isolation line (V) runs through at least one of the vias (4), so that, after the isolation, the contacts (12, 13) form contact surfaces (5) at at least one side surface (1a) of the carrier (1), wherein the side surface (1a) is perpendicular to the mounting surface (11) of the carrier (1), and a mounting of the carrier (1) with the contact surfaces (5) on a connection plate (8), wherein the mounting surface (11) is perpendicular to the connection plate (8).

公开(公告)号：US10115871B2

公开(公告)日：2018-10-30

申请号：US15543665

申请日：2015-12-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Linkov ,  Siegfried Herrmann

IPC: H01L33/50 ,  H01L33/60 ,  H01L23/00 ,  H01L33/62 ,  H01L33/56

Abstract: An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

公开(公告)号：US20180287008A1

公开(公告)日：2018-10-04

申请号：US15940929

申请日：2018-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plößl ,  Siegfried Herrmann ,  Martin Rudolf Behringer ,  Frank Singer ,  Thomas Schwarz

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/48

Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.