公开(公告)号：US20070218605A1

公开(公告)日：2007-09-20

申请号：US11790033

申请日：2007-04-23

申请人： Yoshio Ozawa ,  Yasumasa Suizu ,  Yoshitaka Tsunashima

发明人： Yoshio Ozawa ,  Yasumasa Suizu ,  Yoshitaka Tsunashima

IPC分类号： H01L21/765

CPC分类号： H01L29/7881 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02233 ,  H01L21/02271 ,  H01L21/28044 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28273 ,  H01L21/3144 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66825 ,  H01L29/7833 ,  Y10S438/911 ,  Y10S438/942 ,  Y10S438/947 ,  Y10S438/966

摘要： A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode is formed on the gate electrode insulating film, and an oxidation process using ozone is performed to sufficiently round the shape of the lower edge of the gate electrode.

公开(公告)号：US20070200168A1

公开(公告)日：2007-08-30

申请号：US11706999

申请日：2007-02-16

申请人： Yoshio Ozawa ,  Yoshitaka Tsunashima

发明人： Yoshio Ozawa ,  Yoshitaka Tsunashima

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4234

摘要： A MONOS type nonvolatile memory cell is structured such that a laminated insulating film which is formed by sequentially laminating a tunnel insulating layer, a charge storage insulating layer, and a charge block insulating layer is provided on a convex curved surface portion of a semiconductor substrate, and a control gate electrode is further formed thereon. A thickness of the tunnel insulating layer is set to be 4 to 10 nm, and data writing/data erasing operations are carried out by making an F-N tunneling current flow in the tunnel insulating layer.

摘要翻译： 构造为在半导体衬底的凸曲面部分上设置通过依次层叠隧道绝缘层，电荷存储绝缘层和电荷块绝缘层而形成的叠层绝缘膜的MONOS型非易失性存储单元， 并且还在其上形成控制栅电极。 将隧道绝缘层的厚度设定为4〜10nm，通过在隧道绝缘层中形成F-N隧道电流来进行数据写入/数据擦除动作。

公开(公告)号：US20060244083A1

公开(公告)日：2006-11-02

申请号：US11475879

申请日：2006-06-28

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L29/78

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

公开(公告)号：US20050170666A1

公开(公告)日：2005-08-04

申请号：US10999937

申请日：2004-12-01

申请人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L29/78 ,  H01L21/31 ,  H01L21/469 ,  H01L21/425 ,  H01L21/22

CPC分类号： H01L21/02321 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3143 ,  H01L21/31645 ,  H01L29/518

摘要： A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas.

摘要翻译： 本文公开的半导体器件的制造方法包括：在基板上形成含有金属的硅酸盐膜; 并通过使用ND 3 N 3气体将氮和氘引入到硅酸盐膜中。

公开(公告)号：US20050006675A1

公开(公告)日：2005-01-13

申请号：US10915805

申请日：2004-08-11

申请人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/283 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76 ,  H01L31/062 ,  B21D39/00 ,  H01L31/119

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US06790723B2

公开(公告)日：2004-09-14

申请号：US09984404

申请日：2001-10-30

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L218242

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US06538271B2

公开(公告)日：2003-03-25

申请号：US09874309

申请日：2001-06-06

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L2120

CPC分类号： H01L21/3185 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/345 ,  H01L27/10852 ,  H01L27/10861

摘要： A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.

摘要翻译： 半导体器件包括形成在半导体衬底上的半导体衬底和氮化硅膜。 氮化硅膜基本上不含Si-H键，并且每单位面积的Si-H密度为1×10 15 cm -2以下。

公开(公告)号：US06333547B1

公开(公告)日：2001-12-25

申请号：US09478369

申请日：2000-01-06

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L2358

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

摘要翻译： 使用六氯二硅烷（Si 2 Cl 6）作为用于形成可能与氧化硅膜的蚀刻速率差异很大的氮化硅膜的Si原料。 氮化硅膜通过LPCVD法形成。

公开(公告)号：US06326658B1

公开(公告)日：2001-12-04

申请号：US09404594

申请日：1999-09-24

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

IPC分类号： H01L27108

CPC分类号： H01L27/10867

摘要： A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance in the post process accompanied by high temperature after formation of the buried strap.

摘要翻译： 在沟槽侧面上形成SiC层之后形成掩埋带，以抑制从沟槽的侧表面（单晶Si）到掩埋带（多晶Si）的Si的外延生长而不会增加 在后处理中的接触电阻伴随着形成埋藏带的高温。

公开(公告)号：US6146938A

公开(公告)日：2000-11-14

申请号：US340143

申请日：1999-06-28

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

IPC分类号： H01L21/02 ,  H01L21/318 ,  H01L21/8242

CPC分类号： H01L27/1087 ,  H01L28/40 ,  H01L21/3185 ,  H01L27/1085

摘要： A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.

摘要翻译： 去除在硅衬底的表面上形成的天然膜。 砷被掺杂到硅衬底的表面中以形成作为下电容器电极的n型杂质扩散层。 在n型杂质扩散层上形成作为电容绝缘膜的氮化硅膜，而不会在n型杂质扩散层的表面上生长任何氧化膜。 在氮化硅膜上形成上部电容电极。