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39 条记录 (耗时 0.031 秒)

    Method of making circuitized substrate with internal optical pathway
    21.
    发明申请
    Method of making circuitized substrate with internal optical pathway 有权
    制造具有内部光通路的电路化基板的方法

    公开(公告)号：US20090092353A1

    公开(公告)日：2009-04-09

    申请号：US11907006

    申请日：2007-10-09

    申请人： Benson Chan ,  How T. Lin ,  Roy H. Magnuson ,  Voya R. Markovich ,  Mark D. Poliks

    发明人： Benson Chan ,  How T. Lin ,  Roy H. Magnuson ,  Voya R. Markovich ,  Mark D. Poliks

    IPC分类号： G02B6/122

    CPC分类号： G02B6/1221 ,  G02B6/132 ,  G02B6/136 ,  G02B6/4214 ,  G02B6/4246 ,  H05K1/0274

    摘要： A circuitized substrate (e.g., PCB) including an internal optical pathway as part thereof such that the substrate is capable of transmitting and/or receiving both electrical and optical signals. The substrate includes an angular reflector on one of the cladding layers such that optical signals passing through the optical core will impinge on the angled reflecting surfaces of the angular reflector and be reflected up through an opening (including one with optically transparent material therein), e.g., to a second circuitized substrate also having at least one internal optical pathway as part thereof, to thus interconnect the two substrates optically. A method of making the substrate is also provided.

    摘要翻译： 包括作为其一部分的内部光学路径的电路化衬底（例如，PCB），使得衬底能够传输和/或接收电信号和光信号。 衬底包括在一个包覆层上的角反射器，使得穿过光学核心的光信号将撞击角形反射器的成角度的反射表面，并通过开口（包括其中具有光学透明材料的一个）反射，例如 涉及另外还具有至少一个内部光学路径作为其一部分的第二电路化基板，从而光学地连接两个基板。 还提供了制造基板的方法。

    Dielectric structure and method of formation
    22.
    发明授权
    Dielectric structure and method of formation 失效
    介电结构和形成方法

    公开(公告)号：US06495239B1

    公开(公告)日：2002-12-17

    申请号：US09458291

    申请日：1999-12-10

    申请人： Anilkumar C. Bhatt ,  Stephen J. Fuerniss ,  Roy H. Magnuson ,  Voya R. Markovich

    发明人： Anilkumar C. Bhatt ,  Stephen J. Fuerniss ,  Roy H. Magnuson ,  Voya R. Markovich

    IPC分类号： B32B310

    CPC分类号： B32B7/04 ,  B32B27/26 ,  B32B27/32 ,  B32B2250/40 ,  B32B2305/72 ,  H05K3/0023 ,  H05K3/4602 ,  H05K3/4623 ,  H05K3/4626 ,  H05K3/4641 ,  H05K2201/09509 ,  H05K2201/09536 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/28 ,  Y10T428/31511

    摘要： A dielectric structure, wherein two fully cured photoimageable dielectric (PID) layers of the structure are nonadhesively interfaced by a partially cured PID layer. The partially cured PID layer includes a power plane sandwiched between a first partially cured PID sheet and a second partially cured PID sheet. The fully cured PID layers each include an internal power plane, a plated via having a blind end conductively coupled to the internal power plane, and a plated via passing through the fully cured PID layer. The dielectric structure may further include a first PID film partially cured and nonadhesively coupled to one of the fully cured PID layers. The dialectric structure may further include a second PID film partially cured and nonadhesively coupled to the other fully cured PID layer.

    摘要翻译： 一种电介质结构，其中该结构的两个完全固化的可光成像电介质（PID）层通过部分固化的PID层非粘性地接合。 部分固化的PID层包括夹在第一部分固化的PID片和第二部分固化的PID片之间的动力平面。 完全固化的PID层各自包括内部电源平面，具有导电耦合到内部电源平面的盲端的电镀通孔以及穿过完全固化的PID层的电镀通孔。 电介质结构还可以包括部分固化并非粘性地耦合到完全固化的PID层之一的第一PID膜。 所述方程式结构还可以包括部分固化并非粘性地耦合到另一完全固化的PID层的第二PID膜。

    Semi-subtractive circuitization
    23.
    发明授权
    Semi-subtractive circuitization 失效
    半减法电路

    公开(公告)号：US5427895A

    公开(公告)日：1995-06-27

    申请号：US172409

    申请日：1993-12-23

    申请人： Roy H. Magnuson ,  Richard W. Malek ,  Voya R. Markovich ,  William E. Wilson

    发明人： Roy H. Magnuson ,  Richard W. Malek ,  Voya R. Markovich ,  William E. Wilson

    IPC分类号： H05K3/10 ,  H05K3/24 ,  H05K3/42 ,  G03F7/00

    CPC分类号： H05K3/427 ,  H05K3/108 ,  H05K2201/0355 ,  H05K2203/072 ,  H05K3/244

    摘要： A process for selective plating of a metal onto a substrate surface is provided. The process includes laminating a layer of conductive metal onto a dielectric substrate; and providing thru holes extending through said layer of conductive metal and said dielectric substrate.A thin layer of conductive metal is plated on the walls of the thru holes; and a photoresist layer is applied to the surface of the conductive metal and selectively exposed and developed to provide a mask corresponding to the negative of the desired circuit pattern.The exposed metal that is not covered by the photoresist is removed and then the remaining photoresist is removed to thereby provide the desired circuit pattern. A conductive metal is plated on the pattern up to the desired thickness.

    摘要翻译： 提供了将金属选择性镀覆到基板表面上的工艺。 该方法包括将导电金属层层压到电介质基底上; 并且提供穿过所述导电金属层和所述电介质基板的通孔。 导电金属薄层镀在通孔的壁上; 并且将光致抗蚀剂层施加到导电金属的表面并选择性地暴露和显影以提供对应于期望电路图案的负值的掩模。 去除未被光致抗蚀剂覆盖的暴露的金属，然后除去剩余的光致抗蚀剂，从而提供所需的电路图案。 将导电金属镀在图案上达到所需厚度。

    Dielectric structure and method of formation
    26.
    发明授权
    Dielectric structure and method of formation 失效
    介电结构和形成方法

    公开(公告)号：US06699350B2

    公开(公告)日：2004-03-02

    申请号：US10217616

    申请日：2002-08-12

    申请人： Anilkumar C. Bhatt ,  Stephen J. Fuerniss ,  Roy H. Magnuson ,  Voya R. Markovich

    发明人： Anilkumar C. Bhatt ,  Stephen J. Fuerniss ,  Roy H. Magnuson ,  Voya R. Markovich

    IPC分类号： B32B3100

    CPC分类号： B32B7/04 ,  B32B27/26 ,  B32B27/32 ,  B32B2250/40 ,  B32B2305/72 ,  H05K3/0023 ,  H05K3/4602 ,  H05K3/4623 ,  H05K3/4626 ,  H05K3/4641 ,  H05K2201/09509 ,  H05K2201/09536 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/28 ,  Y10T428/31511

    摘要： A method for forming a dielectric structure. A first layer is formed, wherein the first layer includes a first fully cured photoimageable dielectric (PID) material. A sticker lays is nonadhesively formed on the first layer, wherein the sticker layer includes a partially cured PID material. A second layer is nonadhesively formed on the sticker layer, wherein the second layer includes a second fully cured PID material, wherein the sticker layer is nonadhesively sandwiched between the first layer and the second layer such that the sticker layer is in non-adhesive contact with the first layer and in non-adhesive contact with the second layer, and wherein the sticker layer is capable of remaining in non-adhesive contact with the first layer and the second layer until the sticker layer is subsequently subjected to additional curing.

    摘要翻译： 一种形成电介质结构的方法。 形成第一层，其中第一层包括第一完全固化的可光成像的电介质（PID）材料。 在第一层上非粘性地形成贴纸，其中贴纸层包括部分固化的PID材料。 第二层非粘性地形成在粘合剂层上，其中第二层包括第二完全固化的PID材料，其中粘合层非粘性地夹在第一层和第二层之间，使得粘合剂层与 所述第一层与所述第二层非粘合接触，并且其中所述粘合剂层能够保持与所述第一层和所述第二层的非粘合性接触，直到所述粘合剂层随后进行另外的固化。

    Electroless plating with bi-level control of dissolved oxygen, with specific location of chemical maintenance means
    30.
    发明授权
    Electroless plating with bi-level control of dissolved oxygen, with specific location of chemical maintenance means 失效
    化学镀具有双层控制溶解氧，具有化学维护方式的具体位置

    公开(公告)号：US4967690A

    公开(公告)日：1990-11-06

    申请号：US508510

    申请日：1990-04-12

    申请人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    发明人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    IPC分类号： C23C18/16 ,  C23C18/40 ,  H05K3/18

    CPC分类号： C23C18/40 ,  C23C18/1619 ,  C23C18/1682 ,  C23C18/1683 ,  H05K3/187

    摘要： Nodule formation in a continuous electroless copper plating system is minimized by independently controlling the dissolved oxygen contents on the plating solution in the bath and in the associated external piping. The level of dissolved oxygen in the plating tank is maintained at a value such that satisfactory plating takes place. At the point where the plating solution leaves the tank, additional oxygen gas is introducted into the solution so that the level of dissolved oxygen in the plating solution in the external piping is high enough to prevent any plating from taking place in the external piping and so that in the external piping the copper is etched or dissolved back into solution. At the end of the external piping, the dissolved oxygen level is reduced so that the dissolved oxygen level of the plating solution in the tank is maintained at the level where plating will take place.

    摘要翻译： 通过独立地控制浴中的镀液和相关的外部管道中的溶解氧含量，使连续化学镀铜系统中的结节形成最小化。 电镀槽中的溶解氧水平保持在这样的值，使得发生令人满意的电镀。 在电镀液离开槽的地方，另外的氧气被引入到溶液中，使得外部管道中的电镀溶液中的溶解氧水平足够高，以防止在外部管道中发生任何电镀 在外部管道中，铜被蚀刻或溶解回溶液中。 在外部管道的末端，溶解氧水平降低，使得罐中的电镀液的溶解氧水平保持在电镀的水平。