公开(公告)号：US07483462B2

公开(公告)日：2009-01-27

申请号：US10836176

申请日：2004-04-30

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/32366 ,  H01S5/3406 ,  H01S5/34306

摘要： Disclosed is a structure for an active region of a GaAs based VCSEL with strong optical output substantially within the range of 1.3 μm and potentially for the 1.5 um range, making it well suited for the transmissivity of silica core fiberoptics. The active region of the VCSEL incorporates antimony in the quantum wells and portions of the barriers. The presence of Sb substantially smooths the surface of the barriers and quantum wells during the process of beam epitaxy, causing a higher critical thickness of each of the layers, thereby enabling fabrication with significantly reduced defects.

摘要翻译： 公开了一种基于GaAs的VCSEL的有源区的结构，其具有基本上在1.3μm范围内的强光学输出，并且潜在地为1.5μm的范围，使得其非常适合于硅芯光纤的透射率。 VCSEL的有源区域在量子阱和屏障的一部分中并入锑。 在光束外延过程中，Sb的存在使得势垒和量子阱的表面基本上平滑，从而导致每个层的更高的临界厚度，从而能够以显着减少的缺陷进行制造。

公开(公告)号：US20080023688A1

公开(公告)日：2008-01-31

申请号：US11735993

申请日：2007-04-16

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L33/00 ,  H01L29/737

CPC分类号： H01L29/201 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/3211

摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.

摘要翻译： 制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。 通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。 中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。 中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。 注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。

公开(公告)号：US07095770B2

公开(公告)日：2006-08-22

申请号：US10026016

申请日：2001-12-20

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/3211 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34353

摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well comprised of InGaAsSbN; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Confinement and barrier layers can comprise AlGaAs. Barrier layer, in the alternative, can also comprise GaAsP. Nitrogen can be placed in the quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

公开(公告)号：US06850548B2

公开(公告)日：2005-02-01

申请号：US10028435

申请日：2001-12-28

申请人： Samuel S. Villareal ,  Ralph H. Johnson

发明人： Samuel S. Villareal ,  Ralph H. Johnson

IPC分类号： H01S5/183 ,  H01S5/30 ,  H01S3/082

CPC分类号： H01S5/18313 ,  H01S5/18358 ,  H01S5/3054

摘要： An asymmetric distributed Bragg reflector (DBR) suitable for use in vertical cavity surface emitting lasers. The asymmetric DBR is comprised of stacked material layers having different indexes of refraction that are joined using asymmetrical transition regions in which the transition steps within a transition region have different material compositions, different doping levels, and different layer thicknesses. Adjacent transition regions have different transition steps. Thinner transition regions are relatively highly doped and are located where the optical standing wave within the DBR has a low field strength. Thicker transition regions are relatively lightly doped and are located where the optical standing wave has a relatively high field strength. Beneficially, in the AlXGa(1−X)As material system the stacked material layers are alternating layers of AlAs and GaAs. Other material systems will use other alternating layers.

摘要翻译： 适用于垂直腔表面发射激光器的非对称分布布拉格反射器（DBR）。 非对称DBR由具有不同折射率的堆叠材料层组成，其使用不对称过渡区域连接，其中过渡区域内的转变步骤具有不同的材料组成，不同的掺杂水平和不同的层厚度。 相邻的过渡区域具有不同的过渡步骤。 较薄的过渡区域相对高掺杂，位于DBR内的光驻波具有低场强。 较厚的过渡区域相对较轻地掺杂，并且位于光驻波具有相对高的场强的位置。 有利地，在AlXGa（1-X）As材料体系中，堆叠的材料层是AlAs和GaAs的交替层。 其他材料系统将使用其他交替层。

公开(公告)号：US06558973B2

公开(公告)日：2003-05-06

申请号：US09766797

申请日：2001-01-22

申请人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

发明人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

IPC分类号： H01L2100

CPC分类号： H01L31/105 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02546 ,  H01L31/184 ,  Y02E10/544 ,  Y10S438/938

摘要： A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region. The high-speed photodiode can thus be formed utilizing GaAs, or other substrate material, such as germanium and silicon.

公开(公告)号：US06256333B1

公开(公告)日：2001-07-03

申请号：US08989731

申请日：1997-12-12

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S3085

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/18333 ,  H01S5/18358 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3211 ,  H01S5/3432

摘要： An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

摘要翻译： 在一个（即，n掺杂）端具有扩展的有效未掺杂区域的VCSEL的有源区和另一个（即，p掺杂）端，其具有直到甚至包括有源区的一部分的显着掺杂区。 之前的方式是将n和p掺杂区域重掺杂到活性区域，至少接近或甚至部分地掺入其中。

公开(公告)号：US5940422A

公开(公告)日：1999-08-17

申请号：US674230

申请日：1996-06-28

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/028 ,  H01S5/10 ,  H01S5/183 ,  H01S3/19

CPC分类号： H01S5/18391 ,  H01S2301/166 ,  H01S2301/203 ,  H01S5/18308 ,  H01S5/18361 ,  H01S5/2059

摘要： A vertical cavity surface emitting laser is provided with a mode control structure that selectively encourages or inhibits the lasing of the laser in regions of the mode control structure. Light is encouraged to lase and emit light through first portions of the mode control structure while lasing is inhibited in second portions. The first and second portions of the mode control structure are patterned by providing different thicknesses for the first and second portions of the mode control structure.

摘要翻译： 垂直腔表面发射激光器设置有模式控制结构，其在模式控制结构的区域中选择性地鼓励或禁止激光器的激光。 鼓励光通过模式控制结构的第一部分发光并在第二部分抑制激光的同时发光。 通过为模式控制结构的第一和第二部分提供不同的厚度来对模式控制结构的第一和第二部分进行图案化。

公开(公告)号：US5225377A

公开(公告)日：1993-07-06

申请号：US695185

申请日：1991-05-03

申请人： John R. Hines ,  Ralph H. Johnson ,  Richard Kirkpatrick

发明人： John R. Hines ,  Ralph H. Johnson ,  Richard Kirkpatrick

IPC分类号： G01L9/00

CPC分类号： G01L9/0042 ,  Y10S438/924

摘要： A structure is formed from two layers of material having opposite conductivity types. A first region is formed within the structure, and extends at least in part into a layer to be etched. A surface of the structure is then masked and etched. The result is a microstructure which varies with the conductivity type and geometry of the region formed and etchant used.

公开(公告)号：US5156052A

公开(公告)日：1992-10-20

申请号：US630687

申请日：1990-12-20

申请人： Ralph H. Johnson ,  John R. Hines

发明人： Ralph H. Johnson ,  John R. Hines

IPC分类号： G01L9/00

CPC分类号： G01L9/0054 ,  G01L9/0042 ,  Y10T29/49103

摘要： A pressure transducer having means for improving the linearity and sensitivity of an output signal from the pressure transducer. Ribs and bosses are introduced in the diaphragm region to collect the moments caused by a difference in pressure on the two sides of the diaphragm and thus improve device sensitivity. In addition, the ribs and bosses prevent stretching of the piezoresistors thus improving the linearity of the device. A constraint can also be included to improve the alignment of the piezoresistors thus improving the linearity of the device.

公开(公告)号：US09787172B2

公开(公告)日：2017-10-10

申请号：US14470455

申请日：2014-08-27

申请人： Shiguo Luo ,  Ralph H. Johnson

发明人： Shiguo Luo ,  Ralph H. Johnson

IPC分类号： H02M1/084 ,  H02M3/157 ,  H02M1/08 ,  H02M3/158 ,  G06F1/26

CPC分类号： H02M1/084 ,  G06F1/26 ,  H02M1/08 ,  H02M3/157 ,  H02M3/1584

摘要： Methods and systems are disclosed that may be employed to implement adaptive FET drive voltage optimization for voltage regulator (VR) integrated power stages (IPstages) that have different MOSFET RDS(on) characteristics to improve VR efficiency and current-sense accuracy.