公开(公告)号：US20120138823A1

公开(公告)日：2012-06-07

申请号：US13372713

申请日：2012-02-14

申请人： Chung Woh Lai ,  Xiao Hi Liu ,  Anita Madan ,  Klaus Schwarz ,  J. Campbell Scott

发明人： Chung Woh Lai ,  Xiao Hi Liu ,  Anita Madan ,  Klaus Schwarz ,  J. Campbell Scott

IPC分类号： B01J19/12

CPC分类号： H01L21/3221 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/3226 ,  H01L29/1054 ,  H01L29/7842

摘要： A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

摘要翻译： 提供了一种在半导体器件中产生图案化应变区域的方法。 该方法包括将发光束局部引导到半导体本体的表面部分上; 以及利用所述发光束操作位于所述半导体主体的表面部分附近的多个位错，所述发光束的特征在于具有扫描速度，以便产生所述图案化的应变区域。

公开(公告)号：US20070238267A1

公开(公告)日：2007-10-11

申请号：US11308463

申请日：2006-03-28

申请人： Yaocheng Liu ,  Oleg Gluschenkov ,  Anita Madan ,  Kern Rim ,  Judson Holt

发明人： Yaocheng Liu ,  Oleg Gluschenkov ,  Anita Madan ,  Kern Rim ,  Judson Holt

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/78 ,  H01L29/7848

摘要： Expitaxial substitutional solid solutions of silicon carbon can be obtained by an ultrafast anneal of an amorphous carbon-containing silicon material. The anneal is performed at a temperature above the recrystallization point, but below the melting point of the material and preferably lasts for less than 100 milliseconds in this temperature regime. The anneal is preferably a flash anneal or laser anneal. This approach is able to produce epitaxial silicon and carbon-containing materials with a substantial portion of the carbon atoms at substitutional lattice positions. The approach is especially useful in CMOS processes and other electronic device manufacture where the presence of epitaxial Si1−yCy, y

摘要翻译： 可以通过非晶态含碳硅材料的超快速退火获得硅碳的外延取代固溶体。 退火在高于再结晶点的温度下进行，但低于材料的熔点，并且在该温度范围内优选持续小于100毫秒。 退火优选是闪光退火或激光退火。 这种方法能够产生具有相当大部分碳原子在取代晶格位置的外延硅和含碳材料。 该方法在CMOS工艺和其它电子器件制造中特别有用，其中外延Si 1-y C y y y的存在y <0.1对于应变工程或带隙工程是理想的 。

公开(公告)号：US07279758B1

公开(公告)日：2007-10-09

申请号：US11420047

申请日：2006-05-24

申请人： Jinghong H. Li ,  Yaocheng Liu ,  Zhijiong Luo ,  Anita Madan ,  Nivo Rovedo

发明人： Jinghong H. Li ,  Yaocheng Liu ,  Zhijiong Luo ,  Anita Madan ,  Nivo Rovedo

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/823814 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848 ,  Y10S257/90

摘要： The present invention relates to a semiconductor device including at least one n-channel field effect transistor (n-FET). Specifically, the n-FET includes first and second patterned stressor layers that both contain a carbon-substituted and tensilely stressed single crystal semiconductor. The first patterned stressor layer has a first carbon concentration and is located in source and drain (S/D) extension regions of the n-FET at a first depth. The second patterned stressor layer has a second, higher carbon concentration and is located in S/D regions of the n-FET at a second, deeper depth. Such an n-FET with the first and second patterned stressor layers of different carbon concentration and different depths provide improved stress profile for enhancing electron mobility in the channel region of the n-FET.

摘要翻译： 本发明涉及包括至少一个n沟道场效应晶体管（n-FET）的半导体器件。 具体地说，n-FET包括均包含碳取代和拉伸应力单晶半导体的第一和第二图案应力层。 第一图案应力层具有第一碳浓度并且位于第一深度处的n-FET的源极和漏极（S / D）延伸区域中。 第二图案应力层具有第二较高的碳浓度，并且位于第二较深深度处的n-FET的S / D区中。 这种具有不同碳浓度和不同深度的第一和第二图案应力层的n-FET提供了改善的应力分布，用于增强n-FET的沟道区域中的电子迁移率。

公开(公告)号：US07232774B2

公开(公告)日：2007-06-19

申请号：US10707878

申请日：2004-01-20

申请人： Ashima B. Chakravarti ,  Bruce B. Doris ,  Romany Ghali ,  Oleg G. Gluschenkov ,  Michael A. Gribelyuk ,  Woo-Hyeong Lee ,  Anita Madan

发明人： Ashima B. Chakravarti ,  Bruce B. Doris ,  Romany Ghali ,  Oleg G. Gluschenkov ,  Michael A. Gribelyuk ,  Woo-Hyeong Lee ,  Anita Madan

IPC分类号： H01L21/00

CPC分类号： C23C16/24 ,  C23C16/46 ,  H01L21/28035 ,  H01L21/32055 ,  H01L29/4925

摘要： A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.

摘要翻译： 形成超小晶粒尺寸的多晶硅的方法采用CVD装置的衬底的上侧和下侧的差分加热，其中衬底的下侧比上侧受到明显更多的功率，优选大于 75％的权力; 并且其中在超过550℃的硅结晶温度超过50℃的温度下在沉积期间保持基底。

公开(公告)号：US20120294322A1

公开(公告)日：2012-11-22

申请号：US13565018

申请日：2012-08-02

申请人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

发明人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

IPC分类号： H01S3/10

CPC分类号： H01L21/3221 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/3226 ,  H01L29/1054 ,  H01L29/7842

摘要： A system for manipulating dislocations on semiconductor devices, includes a moveable laser configured to generate a laser beam locally on a surface portion of the semiconductor body having a plurality of dislocations, the moveable laser being characterized as having a scan speed, the moveable laser manipulates the plurality of dislocations on the surface portion of the semiconductor body by adjusting the temperature and the scan speed of the laser beam.

摘要翻译： 一种用于操纵半导体器件上的位错的系统，包括可移动激光器，其被配置为在具有多个位错的半导体主体的表面部分局部地产生激光束，所述可移动激光器的特征在于具有扫描速度，所述可移动激光器 通过调整激光束的温度和扫描速度，半导体本体的表面部分上的多个位错。

公开(公告)号：US08138066B2

公开(公告)日：2012-03-20

申请号：US12242990

申请日：2008-10-01

申请人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

发明人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/3226 ,  H01L29/1054 ,  H01L29/7842

摘要： A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

摘要翻译： 提供了一种在半导体器件中产生图案化应变区域的方法。 该方法包括将发光束局部引导到半导体本体的表面部分上; 以及利用所述发光束操作位于所述半导体主体的表面部分附近的多个位错，所述发光束的特征在于具有扫描速度，以便产生所述图案化的应变区域。

公开(公告)号：US20080121926A1

公开(公告)日：2008-05-29

申请号：US11464664

申请日：2006-08-15

申请人： Jin Ping Liu ,  Richard J. Murphy ,  Anita Madan ,  Ashima B. Chakravarti

发明人： Jin Ping Liu ,  Richard J. Murphy ,  Anita Madan ,  Ashima B. Chakravarti

IPC分类号： H01L27/00

CPC分类号： H01L29/78 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532 ,  H01L29/1054

摘要： An integrated circuit system includes a substrate, a carbon-containing silicon region over the substrate, a non-carbon-containing silicon region over the substrate, and a silicon-carbon region, including the non-carbon-containing silicon region and the carbon-containing silicon region.

摘要翻译： 集成电路系统包括衬底，衬底上的含碳的硅区域，衬底上的非含碳的硅区域和包含非含碳硅区域和碳 - 碳区域的硅 - 碳区域， 含硅区域。

公开(公告)号：US20070134861A1

公开(公告)日：2007-06-14

申请号：US11300147

申请日：2005-12-14

申请人： Jin-Ping Han ,  Renee Mo ,  Tsong Tai ,  Anita Madan ,  Nivo Rovedo ,  Victor Ku ,  Martin Frank ,  Daeyoung Lim ,  Richard Haight

发明人： Jin-Ping Han ,  Renee Mo ,  Tsong Tai ,  Anita Madan ,  Nivo Rovedo ,  Victor Ku ,  Martin Frank ,  Daeyoung Lim ,  Richard Haight

IPC分类号： H01L21/8234

CPC分类号： H01L21/823857 ,  H01L21/823828

摘要： Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment includes providing a workpiece, forming a gate dielectric material over the workpiece, the gate dielectric material comprising an insulator and at least one metal element, and forming a conductive material over the gate dielectric material. The conductive material comprises the at least one metal element of the gate dielectric material.

摘要翻译： 公开了半导体器件及其制造方法。 优选实施例包括提供工件，在工件上形成栅极电介质材料，栅极电介质材料包括绝缘体和至少一个金属元件，并在栅极电介质材料上形成导电材料。 导电材料包括栅介电材料的至少一个金属元件。

公开(公告)号：US20050158924A1

公开(公告)日：2005-07-21

申请号：US10707878

申请日：2004-01-20

申请人： Ashima Chakravarti ,  Bruce Doris ,  Romany Ghali ,  Oleg Gluschenkov ,  Michael Gribelyuk ,  Woo-Hyeong Lee ,  Anita Madan

发明人： Ashima Chakravarti ,  Bruce Doris ,  Romany Ghali ,  Oleg Gluschenkov ,  Michael Gribelyuk ,  Woo-Hyeong Lee ,  Anita Madan

IPC分类号： C23C16/24 ,  C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

CPC分类号： C23C16/24 ,  C23C16/46 ,  H01L21/28035 ,  H01L21/32055 ,  H01L29/4925

摘要： A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.

摘要翻译： 形成超小晶粒尺寸的多晶硅的方法采用CVD装置的衬底的上侧和下侧的差分加热，其中衬底的下侧比上侧受到明显更多的功率，优选大于 75％的权力; 并且其中在超过550℃的硅结晶温度超过50℃的温度下在沉积期间保持基底。

公开(公告)号：US08716037B2

公开(公告)日：2014-05-06

申请号：US12967323

申请日：2010-12-14

申请人： Thomas N. Adam ,  Stephen W. Bedell ,  Eric C. Harley ,  Judson R. Holt ,  Anita Madan ,  Conal E. Murray ,  Teresa L. Pinto

发明人： Thomas N. Adam ,  Stephen W. Bedell ,  Eric C. Harley ,  Judson R. Holt ,  Anita Madan ,  Conal E. Murray ,  Teresa L. Pinto

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L29/1054 ,  G01N23/207 ,  G01N2223/607 ,  G01N2223/6116 ,  H01L21/823807 ,  H01L22/12

摘要： A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.

摘要翻译： 在包括半导体器件的衬底上提供的单元结构的周期性阵列上进行通过X射线衍射的晶格间距的直接测量。 每个单位结构包括单晶应变材料区域和至少一个应力产生材料区域。 例如，单晶应变材料区域可以是模拟场效应晶体管的沟道的结构，并且所述至少一个应力产生材料区域可以是与单晶应变材料区域外延对准的单晶半导体区域。 可以在各种处理状态下原位执行直接测量，以提供在实际半导体器件中场效应晶体管中的应变的在线监测。