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公开(公告)号：USRE47241E1
公开(公告)日：2019-02-12
申请号：US14979027
申请日：2015-12-22
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
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公开(公告)号：US20180269351A1
公开(公告)日：2018-09-20
申请号：US15986253
申请日：2018-05-22
Applicant: Soraa, Inc.
Inventor： Michael R. Krames , Mark P. D'Evelyn , Akinori Koukitu , Yoshinao Kumagai , Hisashi Murakami
CPC classification number: H01L33/0075 , H01L33/16 , H01L33/32
Abstract: InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.
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公开(公告)号：US09978904B2
公开(公告)日：2018-05-22
申请号：US14054234
申请日：2013-10-15
Applicant: SORAA, INC.
Inventor： Michael R. Krames , Mark P. D'Evelyn , Akinori Koukitu , Yoshinao Kumagai , Hisashi Murakami
CPC classification number: H01L33/0075 , H01L33/16 , H01L33/32
Abstract: InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.
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公开(公告)号：US09650723B1
公开(公告)日：2017-05-16
申请号：US14249708
申请日：2014-04-10
Applicant: SORAA, INC.
Inventor： Mark P. D'Evelyn , Wenkan Jiang , Derrick S. Kamber , Rajeev T. Pakalapati , Michael R. Krames
CPC classification number: C30B7/105 , C30B7/10 , C30B9/00 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/2007
Abstract: Large area seed crystals for ammonothermal GaN growth are fabricated by deposition or layer transfer of a GaN layer on a CTE-matched handle substrate. The sides and back of the handle substrate are protected from the ammonothermal growth environment by a coating comprising an adhesion layer, a diffusion barrier layer, and an inert layer. A patterned mask, also comprising an adhesion layer, a diffusion barrier layer, and an inert layer, may be provided over the GaN layer to allow for reduction of the dislocation density by lateral epitaxial growth.
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25.发明授权公开(公告)号：US09564553B2
公开(公告)日：2017-02-07
申请号：US15074665
申请日：2016-03-18
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J. F. David
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
Abstract translation: 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。
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Patent Agency Ranking
公开(公告)号：US09564320B2
公开(公告)日：2017-02-07
申请号：US13731453
申请日：2012-12-31
Applicant: SORAA, INC.
Inventor： Mark P. D'Evelyn , James S. Speck , Derrick S. Kamber , Douglas W. Pocius
CPC classification number: C30B7/105 , C30B19/068 , C30B19/12 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/0254 , H01L21/02609 , H01L29/2003
Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.
Abstract translation: 公开了在超临界流体中处理材料的技术，包括在设置在高压装置外壳内的胶囊中的加工。 所公开的技术可用于生长GaN，AlN，InN及其合金（包括InGaN，AlGaN和AlInGaN）的晶体，用于制造块状或图案化衬底，其又可用于制造光电器件，激光器，发光 二极管，太阳能电池，光电化学水分解和氢产生装置，光电检测器，集成电路和晶体管。
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27.发明授权公开(公告)号：US09293644B2
公开(公告)日：2016-03-22
申请号：US14040379
申请日：2013-09-27
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J. F. David
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
Abstract translation: 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。
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28.发明授权公开(公告)号：US08987156B2
公开(公告)日：2015-03-24
申请号：US13894220
申请日：2013-05-14
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Derrick S. Kamber
CPC classification number: C01B21/0632 , C30B7/10 , C30B9/00 , C30B28/06 , C30B29/403
Abstract: A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.
Abstract translation: 通过在含氮气体中加入吸附剂来加热第III族金属，形成一种浸渍的多晶III族金属氮化物。 吸收的多晶氮化物中的大部分残余氧被吸气剂化学结合。 浸渍的多晶III族金属氮化物可用作本体III族氮化物晶体的氨热生长的原料。
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29.发明授权Gallium—nitride-on-handle substrate materials and devices and method of manufacture 有权镓氮化物处理衬底材料和器件及其制造方法公开(公告)号：US08946865B2
公开(公告)日：2015-02-03
申请号：US14301520
申请日：2014-06-11
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Arpan Chakraborty , William D. Houck
IPC: H01L29/06 , H01L31/0304 , H01L31/0352 , H01L31/036 , H01L33/32 , H01L33/22 , H01L33/50
CPC classification number: H01L33/32 , H01L21/6835 , H01L21/76254 , H01L24/29 , H01L24/83 , H01L29/02 , H01L29/0692 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/50 , H01L2221/68327 , H01L2221/6835 , H01L2221/68381 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2224/83193 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/00014 , H01L2924/00
Abstract: A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
Abstract translation: 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。
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30.发明授权Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors 有权使用非极性或半极性含镓材料和透明荧光体的极化白光装置公开(公告)号：US08618560B2
公开(公告)日：2013-12-31
申请号：US13623788
申请日：2012-09-20
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
CPC classification number: H01L33/50 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。
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