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    Semiconductor light emitting device
    21.
    发明授权
    Semiconductor light emitting device 有权

    公开(公告)号：US10573786B2

    公开(公告)日：2020-02-25

    申请号：US16055651

    申请日：2018-08-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ju Heon Yoon ,  Tae Hun Kim ,  Jae In Sim

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/46 ,  H01L33/52 ,  H01L33/42 ,  H01L23/00

    Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.

    Light emitting device including light reflection pattern and wavelength converting layer
    22.
    发明授权
    Light emitting device including light reflection pattern and wavelength converting layer 有权

    公开(公告)号：US10541350B2

    公开(公告)日：2020-01-21

    申请号：US15985236

    申请日：2018-05-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ju Heon Yoon ,  Jae In Sim ,  Tae Hun Kim ,  Gi Bum Kim

    IPC: H01L33/10 ,  H01L33/38 ,  H01L33/50

    Abstract: A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.

    Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode
    24.
    发明授权
    Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode 有权
    半导体发光器件包括与透明电极间隔开的焊盘电极

    公开(公告)号：US09548422B2

    公开(公告)日：2017-01-17

    申请号：US14454612

    申请日：2014-08-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Hun Kim ,  Ki Seok Kim ,  Chan Mook Lim ,  Tae Kang Kim

    IPC: H01L33/40 ,  H01L33/38 ,  H01L33/14

    CPC classification number: H01L33/40 ,  H01L33/145 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

    Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

    Abstract translation: 半导体发光器件包括发光结构和第一和第二电极。 发光结构包括第一和第二导电类型的半导体层和介于它们之间的有源层。 第一和第二电极电连接到第一和第二导电类型半导体层。 第二电极包括电流阻挡层，设置在电流阻挡层上的反射部分，设置在第二导电类型半导体层上的透明电极层，设置在电流阻挡层的区域内的焊盘电极部分，以及至少一个 指状电极部分至少部分地设置在透明电极层上。 透明电极层可以与反射部分间隔开，并且具有围绕反射部分的开口。 在一些示例中，透明电极层可以进一步与电流阻挡层间隔开。

    Air conditioner
    25.
    发明授权
    Air conditioner 有权
    冷气机

    公开(公告)号：US09151507B2

    公开(公告)日：2015-10-06

    申请号：US13666312

    申请日：2012-11-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yong Hyun Kil ,  Jung Ho Kim ,  Tae Hun Kim

    IPC: F25D21/14 ,  F24F1/02 ,  F24F13/22

    CPC classification number: F24F1/02 ,  F24F13/222 ,  F24F2013/225

    Abstract: An air conditioner includes a body installed at an outdoor space, and an air discharge tube to guide cold air discharged from the body to an indoor space. An evaporator and a condenser are installed in the body. The evaporator is disposed at a higher level than the condenser. Accordingly, it possible to transfer condensed water generated from the evaporator to the condenser by gravity.

    Abstract translation: 一种空调机，其包括安装在室外空间的主体和用于将从身体排出的冷空气引导至室内空气的排气管。 蒸发器和冷凝器安装在体内。 蒸发器设置在比冷凝器更高的水平。 因此，可以通过重力将从蒸发器产生的冷凝水转移到冷凝器。

    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    26.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    制造半导体发光器件的方法

    公开(公告)号：US20130244356A1

    公开(公告)日：2013-09-19

    申请号：US13801903

    申请日：2013-03-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

    IPC: H01L33/00 ,  H01L33/60

    CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

    Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

    Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

    Semiconductor device
    27.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12207467B2

    公开(公告)日：2025-01-21

    申请号：US17669830

    申请日：2022-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bong Yong Lee ,  Tae Hun Kim ,  Min Kyung Bae

    IPC: H10B43/20 ,  H01L23/10 ,  H01L29/06 ,  H10B41/27 ,  H10B41/40 ,  H10B43/27 ,  H10B43/40

    Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

    Method of fabricating semiconductor device
    28.
    发明授权
    Method of fabricating semiconductor device 有权

    公开(公告)号：US11974433B2

    公开(公告)日：2024-04-30

    申请号：US17575947

    申请日：2022-01-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joo-Heon Kang ,  Tae Hun Kim ,  Jae Ryong Sim ,  Kwang Young Jung ,  Gi Yong Chung ,  Jee Hoon Han ,  Doo Hee Hwang

    IPC: H10B43/27 ,  H10B43/35

    CPC classification number: H10B43/27 ,  H10B43/35

    Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

    Nonvolatile memory device and method of fabricating same
    29.
    发明授权
    Nonvolatile memory device and method of fabricating same 有权

    公开(公告)号：US11856772B2

    公开(公告)日：2023-12-26

    申请号：US16930381

    申请日：2020-07-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seung Won Lee ,  Tae Hun Kim ,  Min Cheol Park ,  Hye Ri Shin ,  Jun Hee Lim ,  Si Yeon Cho

    IPC: H01L27/115 ,  H10B43/27 ,  G11C8/14 ,  G11C7/18

    CPC classification number: H10B43/27 ,  G11C7/18 ,  G11C8/14

    Abstract: A nonvolatile memory device and method of fabricating same, the nonvolatile memory device including a substrate; a first semiconductor layer on the substrate; an etching stop film including a metal oxide on the first semiconductor layer; a mold structure including second semiconductor layers and insulating layers alternately stacked on the etching stop film; a channel hole penetrating through at least one of the mold structure, the etching stop film, the second semiconductor layer and the substrate; and a channel structure extending along a side wall of the channel hole, including an anti-oxidant film, a first blocking insulation film, a second blocking insulation film, a charge storage film, a tunnel insulating film and a channel semiconductor sequentially formed along the side wall of the channel hole. The first semiconductor layer contacts the first blocking insulation film, the second blocking insulation film, the charge storage film, and the tunnel insulating film.

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