公开(公告)号：US20060091565A1

公开(公告)日：2006-05-04

申请号：US10996666

申请日：2004-11-24

申请人： David Slater

发明人： David Slater

IPC分类号： H01L23/48

CPC分类号： H01L33/36 ,  H01L24/03 ,  H01L24/05 ,  H01L33/005 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/00

摘要： A method is disclosed for attaching a bonding pad to the ohmic contact of a diode while reducing the complexity of the photolithography steps. The method includes the steps of forming a blanket passivation layer over the epitaxial layers and ohmic contacts of a diode, depositing a photoresist layer over the blanket passivation layer, opening a via through the photoresist above the ohmic contacts and on the blanket passivation layer, removing the portion of the blanket passivation layer defined by the via to expose the surface of the ohmic contact, depositing a metal layer on the remaining photoresist, and on the exposed portion of the ohmic contact defined by the via, and removing the remaining photoresist to thereby concurrently remove any metal on the photoresist and to thereby establish a metal bond pad on the ohmic contact in the via.

摘要翻译： 公开了一种用于将焊盘附接到二极管的欧姆接触的方法，同时降低了光刻步骤的复杂性。 该方法包括以下步骤：在二极管的外延层和欧姆接头之上形成覆盖钝化层，在覆盖钝化层上沉积光致抗蚀剂层，在欧姆接触点上方和在覆盖钝化层上打开穿过光致抗蚀剂的通孔，去除 由通孔限定的覆盖钝化层的部分以暴露欧姆接触的表面，在剩余的光致抗蚀剂上沉积金属层，以及在由通孔限定的欧姆接触的暴露部分上，并且从而除去剩余的光致抗蚀剂 同时去除光致抗蚀剂上的任何金属，从而在通孔的欧姆接触面上建立金属接合焊盘。

公开(公告)号：US20060060874A1

公开(公告)日：2006-03-23

申请号：US11082470

申请日：2005-03-17

申请人： John Edmond ,  David Slater ,  Jayesh Bharathan ,  Matthew Donofrio

发明人： John Edmond ,  David Slater ,  Jayesh Bharathan ,  Matthew Donofrio

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/22 ,  H01L33/44

摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.

摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。

公开(公告)号：US20050194584A1

公开(公告)日：2005-09-08

申请号：US10987627

申请日：2004-11-12

申请人： David Slater ,  John Edmond ,  Alexander Suvorov ,  Iain Hamilton

发明人： David Slater ,  John Edmond ,  Alexander Suvorov ,  Iain Hamilton

IPC分类号： H01L29/06 ,  H01L31/0328

CPC分类号： H01L21/2654 ,  H01L33/025 ,  H01L33/145 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.

摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结， 其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中，在植入之前在外延区域中形成台面。 在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。 在离子注入期间，外延膜可以旋转。

公开(公告)号：US20050104072A1

公开(公告)日：2005-05-19

申请号：US10916113

申请日：2004-08-11

申请人： David Slater ,  John Edmond ,  Matthew Donofrio

发明人： David Slater ,  John Edmond ,  Matthew Donofrio

IPC分类号： H01L21/027 ,  H01L21/04 ,  H01L21/263 ,  H01L21/268 ,  H01L33/00 ,  H01L33/34 ,  H01L33/40 ,  H01L21/00 ,  H01L29/15

CPC分类号： H01L33/40 ,  H01L21/0272 ,  H01L21/0485 ,  H01L21/2636 ,  H01L21/268 ,  H01L33/0095 ,  H01L33/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat.

摘要翻译： 半导体器件的接触可以通过在碳化硅（SiC）衬底上形成金属并退火金属和SiC衬底的界面位置以形成金属SiC材料，并避免在SiC上的位置退火而形成 衬底以避免在其上形成金属-SiC材料。

公开(公告)号：US20050029533A1

公开(公告)日：2005-02-10

申请号：US10840463

申请日：2004-05-05

申请人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

发明人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32

CPC分类号： H01L33/145 ,  H01L24/73 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02P80/30 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

公开(公告)号：US20050019971A1

公开(公告)日：2005-01-27

申请号：US10825647

申请日：2004-04-15

申请人： David Slater ,  Bradley Williams ,  Peter Andrews

发明人： David Slater ,  Bradley Williams ,  Peter Andrews

IPC分类号： H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L33/405 ,  H01L33/62 ,  H01L2924/01322 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/00

摘要： Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.

摘要翻译： 发光二极管包括基板，在其上包括二极管区域的基板上的外延区域和与基板相对的外延区域上的多层导电叠层。 钝化层至少部分地延伸在与外延区域相对的多层导电堆叠上，以限定与外延区域相对的多层导电堆叠上的结合区域。 钝化层也跨过多层导电叠层延伸穿过外延区域并延伸到衬底上。 多层导电叠层可以包括在与衬底相对的外延区域上的欧姆层，在与外延区域相对的欧姆层上的反射器层和与欧姆层相对的反射器层上的锡阻挡层。 也可以在与反射层相对的锡阻挡层上设置粘合层。 也可以在与锡阻挡层相对的粘附层上设置接合层。 还可以提供接合层和底座之间的基座和接合。

公开(公告)号：US20050017256A1

公开(公告)日：2005-01-27

申请号：US10920101

申请日：2004-08-17

申请人： David Slater ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffeto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

发明人： David Slater ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffeto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

IPC分类号： H01L21/60 ,  H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L23/48 ,  H01L21/00

CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2224/04026 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

摘要翻译： 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上， 发光器件死到底座。 选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

公开(公告)号：US20160062217A1

公开(公告)日：2016-03-03

申请号：US14781557

申请日：2014-04-01

申请人： David SLATER

发明人： David Slater

IPC分类号： G03B17/56 ,  H04N5/225 ,  G06F1/16 ,  F16C11/10 ,  F16M13/02

CPC分类号： G03B17/566 ,  F16M11/10 ,  F16M11/2035 ,  F16M13/00 ,  F16M13/02 ,  G03B2217/002

摘要： A camera-tablet device mounting apparatus is described, with related systems and methods, which allows for hands-free use of a tablet device in conjunction with the use and control of a camera. The mounting apparatus can be used to support a tablet device in adjustable user-preferred configurations, for various modes of camera operation (e.g. standard photography mode, video mode, self-recording/capture mode). The adjustable configurations of the mounting apparatus can be used to align the tablet device over the center of gravity of the camera, allowing for a properly weight balanced configuration in the user's hand. The adjustable configurations of the mounting apparatus can be used to fold the mount into a compact position. It is further contemplated that additional accessory devices can be supported by the mounting apparatus. A wired or wireless connection between the tablet device and the camera allows for remotely viewing and operating the camera through the tablet device. The apparatus mounted tablet device can be used to augment the functionality and features of the camera.

摘要翻译： 使用相关的系统和方法描述了一种相机 - 平板设备安装设备，其允许与相机的使用和控制结合使用平板设备的免提使用。 安装装置可以用于以可调节的用户优选配置支持平板设备，用于各种相机操作模式（例如标准摄影模式，视频模式，自拍/拍摄模式）。 安装设备的可调节配置可用于使平板设备与照相机的重心对准，从而允许在用户手中进行适当的重量平衡配置。 安装设备的可调配置可用于将安装件折叠成紧凑的位置。 还可以想到，附加的附件装置可以被安装装置支撑。 平板设备和相机之间的有线或无线连接允许通过平板电脑设备远程查看和操作相机。 该装置安装的平板电脑装置可用于增加相机的功能和特征。

公开(公告)号：US20070085104A1

公开(公告)日：2007-04-19

申请号：US11539423

申请日：2006-10-06

申请人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

发明人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/44 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42

摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.

摘要翻译： 公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。 二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。 接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

公开(公告)号：US20070034323A1

公开(公告)日：2007-02-15

申请号：US11585515

申请日：2006-10-24

申请人： Norbert Hiller ,  Peter Andrews ,  David Slater ,  Gerald Negley

发明人： Norbert Hiller ,  Peter Andrews ,  David Slater ,  Gerald Negley

IPC分类号： B32B37/00

CPC分类号： H01L21/67144 ,  H01L21/67132 ,  Y10T29/5313 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T156/1089 ,  Y10T156/1097 ,  Y10T156/1707 ,  Y10T156/1712 ,  Y10T156/1734 ,  Y10T156/1744 ,  Y10T156/1911 ,  Y10T156/1978

摘要： A component assembly system is provided that includes a longitudinally elongated tape carrier, a longitudinally elongated submount carrier, and an assembly machine. A plurality of components may be attached to the tape carrier. The assembly machine is adapted to receiving the tape carrier, with the components attached thereto, and to receive the submount carrier. The assembly machine is further adapted to bring the tape carrier in close proximity to the submount carrier, and to attach the components to the submounts on the submount carrier.

摘要翻译： 提供了一种部件组装系统，其包括纵向细长的带状载体，纵向细长的底座载体和组装机。 多个部件可以附接到带载体。 组装机适于接收带载体的带状载体，并接收底座载体。 装配机还适于使带载体紧靠于底座托架，并将部件附接到副安装架托架上的底座上。