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公开(公告)号：US11954276B2
公开(公告)日：2024-04-09
申请号：US17316768
申请日：2021-05-11
发明人： Shunpei Yamazaki , Hajime Kimura , Masami Jintyou , Yasuharu Hosaka , Naoto Goto , Takahiro Iguchi , Daisuke Kurosaki , Junichi Koezuka
CPC分类号： G06F3/0412 , G06F3/0446 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696 , H10K59/40 , G06F2203/04103
摘要： A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
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公开(公告)号：US11899328B2
公开(公告)日：2024-02-13
申请号：US17994525
申请日：2022-11-28
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1362 , H01L27/12 , G02F1/1345 , G02F1/1335 , G02F1/1337
CPC分类号： G02F1/1368 , G02F1/1337 , G02F1/13454 , G02F1/133345 , G02F1/133512 , G02F1/136227 , H01L27/1214 , H01L27/1225 , H01L27/1248
摘要： The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
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公开(公告)号：US11764074B2
公开(公告)日：2023-09-19
申请号：US17011019
申请日：2020-09-03
发明人： Shunpei Yamazaki , Yasuharu Hosaka , Toshimitsu Obonai , Junichi Koezuka , Yukinori Shima , Masahiko Hayakawa , Takashi Hamochi , Suzunosuke Hiraishi
IPC分类号： H01L29/786 , H01L29/24 , H01L21/477 , H01L21/02 , H01L21/28
CPC分类号： H01L21/477 , H01L21/02112 , H01L21/02403 , H01L21/28 , H01L29/24 , H01L29/7869 , H01L29/78606
摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.
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公开(公告)号：US11637208B2
公开(公告)日：2023-04-25
申请号：US17262793
申请日：2019-07-24
发明人： Junichi Koezuka , Kenichi Okazaki , Yasuharu Hosaka , Toshimitsu Obonai , Yasutaka Nakazawa , Seiji Yasumoto , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L27/12 , H01L51/50 , H05B33/22
摘要： A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.
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公开(公告)号：US11209710B2
公开(公告)日：2021-12-28
申请号：US16720439
申请日：2019-12-19
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1362 , H01L27/12 , G02F1/1345 , G02F1/1335 , G02F1/1337
摘要： The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
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公开(公告)号：US10770310B2
公开(公告)日：2020-09-08
申请号：US16524733
申请日：2019-07-29
发明人： Shunpei Yamazaki , Yasuharu Hosaka , Toshimitsu Obonai , Junichi Koezuka , Yukinori Shima , Masahiko Hayakawa , Takashi Hamochi , Suzunosuke Hiraishi
IPC分类号： H01L21/477 , H01L29/786 , H01L29/24 , H01L21/02 , H01L21/28
摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.
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公开(公告)号：US10483295B2
公开(公告)日：2019-11-19
申请号：US15865567
申请日：2018-01-09
IPC分类号： H01L27/12
摘要： An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.
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公开(公告)号：US10372274B2
公开(公告)日：2019-08-06
申请号：US15091295
申请日：2016-04-05
发明人： Shunpei Yamazaki , Hajime Kimura , Masami Jintyou , Yasuharu Hosaka , Naoto Goto , Takahiro Iguchi , Daisuke Kurosaki , Junichi Koezuka
摘要： A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
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公开(公告)号：US20190051727A1
公开(公告)日：2019-02-14
申请号：US16152850
申请日：2018-10-05
发明人： Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
IPC分类号： H01L29/24 , H01L27/12 , C04B35/622 , H01L29/786 , H01L29/778 , C23C14/58 , C23C14/08 , C04B35/01 , C03C17/245 , C04B35/453
CPC分类号： H01L29/24 , C03C17/245 , C03C2217/23 , C03C2218/151 , C04B35/01 , C04B35/453 , C04B35/62218 , C04B2235/3217 , C04B2235/3225 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/787 , C04B2235/96 , C23C14/08 , C23C14/5853 , H01L27/1225 , H01L29/7782 , H01L29/7786 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
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公开(公告)号：US10205008B2
公开(公告)日：2019-02-12
申请号：US15664353
申请日：2017-07-31
发明人： Toshimitsu Obonai , Hironobu Takahashi , Yasuharu Hosaka , Masahiro Watanabe , Takuya Handa , Yukinori Shima , Takashi Hamochi
IPC分类号： H01L29/786 , H01L21/336 , H01L29/66 , H01L21/02 , H01L21/67
摘要： Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.
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