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85 条记录 (耗时 0.045 秒)

    Pipe connecting tube
    21.
    外观设计
    Pipe connecting tube 有权

    公开(公告)号：USD992701S1

    公开(公告)日：2023-07-18

    申请号：US29801572

    申请日：2021-07-29

    申请人： Jong Ho Lee ,  Hye Jung Lee

    设计人： Jong Ho Lee ,  Hye Jung Lee

    摘要： FIG. 1 is a perspective view of a pipe connecting tube showing our new design,
    FIG. 2 is a front view thereof,
    FIG. 3 is a rear view thereof,
    FIG. 4 is a left-side view thereof,
    FIG. 5 is a right-side view thereof,
    FIG. 6 is a plan view thereof,
    FIG. 7 is a bottom view thereof; and,
    FIG. 8 is an exploded perspective view of thereof.
    The light lines in the drawing figures depict transparent portions of the pipe connecting tube.

    Method of fabricating a 3-D device
    23.
    发明授权
    Method of fabricating a 3-D device 有权
    制造3-D器件的方法

    公开(公告)号：US08367472B2

    公开(公告)日：2013-02-05

    申请号：US13070196

    申请日：2011-03-23

    申请人： Jong Ho Lee ,  Dong Ho Lee ,  Eun Chul Ahn ,  Yong Chai Kwon

    发明人： Jong Ho Lee ,  Dong Ho Lee ,  Eun Chul Ahn ,  Yong Chai Kwon

    IPC分类号： H01L21/60

    CPC分类号： H01L21/76898 ,  H01L23/525 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06589

    摘要： A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.

    摘要翻译： 一种制造半导体器件的方法包括提供具有活性表面的半导体衬底，通过从衬底的与活性表面相对的第二表面去除材料来稀释衬底，将金属载体接合到薄化衬底的第二表面上，形成 通过在所述薄化基板中的开口，在所述通孔开口中形成导电构件，并且图案化结合到所述薄化基板的第二表面的金属载体以形成金属图案。

    Photonic crystal light emitting device using photon-recycling
    24.
    发明授权
    Photonic crystal light emitting device using photon-recycling 有权
    光子晶体发光器件采用光子回收

    公开(公告)号：US08269238B2

    公开(公告)日：2012-09-18

    申请号：US12007495

    申请日：2008-01-11

    申请人： Hyun Jun Kim ,  Chang Hwan Choi ,  Won Ha Moon ,  Jong Ho Lee ,  Jae Chul Yong ,  Jin Ha Kim

    发明人： Hyun Jun Kim ,  Chang Hwan Choi ,  Won Ha Moon ,  Jong Ho Lee ,  Jae Chul Yong ,  Jin Ha Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/46 ,  H01L33/502 ,  H01L33/508 ,  H01L2224/14 ,  H01L2933/0083

    摘要： A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.

    摘要翻译： 1.一种光子晶体发光器件，包括：发光二极管（LED）发光结构，包括第一导电半导体层，第二导电半导体层和插入在所述第一和第二导电半导体层之间的有源层; 以及形成在与所述有源层相反的所述第一导电半导体层的一个表面上的第一光子再循环发光层，其中所述第一光子再循环发光层吸收从所述LED发光结构发射的初级光，并发射光 具有与初级光的波长不同的波长，并且在第一光子再循环发光层的整个厚度上形成光子晶体结构。

    Method of forming fine patterns and manufacturing semiconductor light emitting device using the same
    25.
    发明授权
    Method of forming fine patterns and manufacturing semiconductor light emitting device using the same 有权
    形成精细图案的方法和制造使用其的半导体发光器件

    公开(公告)号：US08080480B2

    公开(公告)日：2011-12-20

    申请号：US12239122

    申请日：2008-09-26

    申请人： Jong Ho Lee ,  Moo Youn Park ,  Soo Ryong Hwang ,  Il Hyung Jung ,  Gwan Su Lee ,  Jin Ha Kim

    发明人： Jong Ho Lee ,  Moo Youn Park ,  Soo Ryong Hwang ,  Il Hyung Jung ,  Gwan Su Lee ,  Jin Ha Kim

    IPC分类号： H01L21/302

    CPC分类号： H01L33/20 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/3083 ,  H01L33/22 ,  H01L33/382

    摘要： A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.

    摘要翻译： 形成精细图案的方法开始于提供c面六边形半导体晶体。 在半导体晶体上形成具有预定图案的掩模。 通过使用掩模对半导体晶体进行干蚀刻以在半导体晶体上形成第一精细图案。 包括第一精细图案的半导体晶体被湿蚀刻以在第一精细图案沿水平方向扩展以形成第二精细图案。 在半导体晶体的湿式蚀刻中获得的第二精细图案分别具有独特的晶面的底面和侧壁。 本发明的精细图案形成方法可以有利地应用于半导体发光器件，特别是应用于具有精细图案所需的语音晶体结构或使用表面等离子体共振原理的结构。

    Air conditioner
    26.
    发明授权
    Air conditioner 有权
    冷气机

    公开(公告)号：US08037707B2

    公开(公告)日：2011-10-18

    申请号：US11710574

    申请日：2007-02-26

    申请人： Jong Ho Lee ,  Moon Shin Kim

    发明人： Jong Ho Lee ,  Moon Shin Kim

    IPC分类号： F25D21/14

    CPC分类号： F24F1/025 ,  F24F13/222 ,  F24F2013/205 ,  F24F2013/227 ,  F24F2140/30

    摘要： An air conditioner is provided. The air conditioner according to an embodiment of the present invention includes: a base pan constituting a lower appearance: and a condensed water detector detecting the amount of condensed water collected on the base pan. The air conditioner according to another embodiment of the present invention includes: a base pan constituting a lower appearance; a blower unit provided at one side of the base pan to guide a flow of air; and a motor providing a fan with a rotational power, wherein a motor support supporting the motor is further installed on the base pan.

    摘要翻译： 提供空调。 根据本发明实施例的空调器包括：底盘，其形状较低;以及冷凝水检测器，其检测在底盘上收集的冷凝水的量。 根据本发明的另一实施例的空调器包括：构成较低外观的底盘; 鼓风机单元，设置在底盘的一侧以引导空气流; 以及提供具有旋转动力的风扇的电动机，其中支撑电动机的电动机支架进一步安装在底盘上。

    Fin field effect transistor having low leakage current and method of manufacturing the FinFET
    27.
    发明授权
    Fin field effect transistor having low leakage current and method of manufacturing the FinFET 有权
    具有低漏电流的Fin场效应晶体管和制造FinFET的方法

    公开(公告)号：US07906814B2

    公开(公告)日：2011-03-15

    申请号：US12310532

    申请日：2007-08-27

    申请人： Jong Ho Lee

    发明人： Jong Ho Lee

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7851 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/7853 ,  H01L29/7854

    摘要： Provided is a fin field effect transistor (FinFET) having low leakage current and a method of manufacturing the same. The FinFET includes: a bulk silicon substrate; a fence-shaped body formed by patterning the substrate; an insulating layer formed on a surface of the substrate to a first height of the fence-shaped body; a gate insulating layer formed at side walls and an upper surface of the fence-shaped body at which the insulating layer is not formed; a gate electrode formed on the gate insulating layer; source/drain formed at regions of the fence-shaped body where the gate electrode is not formed. The gate electrode includes first and second gate electrodes which are in contact with each other and have different work functions. Particularly, the second gate electrode having a low work function is disposed to be close to the drain. As a result, the FinFET according to the present invention increases a threshold voltage by using a material having the high work function for the gate electrode and lowers the work function of the gate electrode overlapping with the drain, so that gate induced drain leakage (GIDL) can be reduced.

    摘要翻译： 提供了具有低漏电流的鳍式场效应晶体管（FinFET）及其制造方法。 FinFET包括：体硅衬底; 通过图案化基板形成的栅栏体; 在所述基板的表面上形成到所述栅栏状体的第一高度的绝缘层; 在侧壁形成的栅极绝缘层和不形成绝缘层的栅栏状体的上表面; 形成在所述栅极绝缘层上的栅电极; 源极/漏极形成在栅极体的不形成栅电极的区域处。 栅电极包括彼此接触并具有不同功函数的第一和第二栅电极。 特别地，具有低功函数的第二栅电极设置成靠近漏极。 结果，根据本发明的FinFET通过使用具有用于栅电极的高功函数的材料来增加阈值电压，并降低与漏极​​重叠的栅电极的功函数，从而导致漏极漏极（GIDL ）可以减少。

    CLUTCH WATER PUMP, CONTROL SYSTEM THEREOF, AND CONTROL METHOD THEREOF
    28.
    发明申请
    CLUTCH WATER PUMP, CONTROL SYSTEM THEREOF, AND CONTROL METHOD THEREOF 审中-公开
    离合器水泵，其控制系统及其控制方法

    公开(公告)号：US20110052425A1

    公开(公告)日：2011-03-03

    申请号：US12616643

    申请日：2009-11-11

    申请人： Seogjin YOON ,  Jong Ho Lee ,  Yoonghwa Park

    发明人： Seogjin YOON ,  Jong Ho Lee ,  Yoonghwa Park

    IPC分类号： F04B49/00 ,  F04B17/00

    CPC分类号： B60W10/02 ,  F01P7/08 ,  F04D13/024 ,  F04D15/00 ,  F04D15/0209 ,  F16D27/02 ,  Y10T477/753

    摘要： A clutch water pump may include a pulley, a brake pad attached on an interior surface of the clutch compartment of the pulley, a clutch disk disposed corresponding to the brake pad in the clutch compartment, a hub rotatably mounted into the penetrating hole and coupled to the clutch disk through a plurality of spring pins, the plurality of spring pins connecting slidably the clutch disk to the hub, a magnetic actuator fixed to the hub and disposed to the clutch disk to selectively move the clutch disk toward or away from the brake pad, and a main shaft, one end of which is fixed to the center of the hub and the other end of which is fixed to an impeller. Furthermore, a method of controlling the clutch water pump according to the engine rotation speed, the coolant temperature, and a condition of the coolant temperature sensor is provided.

    摘要翻译： 离合器水泵可以包括滑轮，附接在滑轮的离合器室的内表面上的制动衬块，与离合器室中的制动衬块相对设置的离合器盘，可旋转地安装到穿透孔中并联接到 所述离合器盘通过多个弹簧销，所述多个弹簧销将所述离合器盘可滑动地连接到所述轮毂;磁性致动器，其固定到所述轮毂并且设置在所述离合器盘上，以选择性地将离合器盘朝向或远离制动片移动 ，主轴一端固定在轮毂的中心，另一端固定在叶轮上。 此外，提供了根据发动机转速，冷却剂温度和冷却剂温度传感器的状态来控制离合器水泵的方法。