摘要:
A device includes a base substrate, a package including an encapsulated die, the package at least partially embedded in the base substrate, and a wiring portion on the package and extending across at least a portion of the base substrate adjacent to the package.
摘要:
A semiconductor package using a chip-embedded interposer substrate is provided. The chip-embedded interposer substrate includes a chip including a plurality of chip pads; a substrate having the chip mounted thereon and including a plurality of redistribution pads for redistributing the chip pads; bonding wires for connecting the chip pads to the redistribution pads; a protective layer having via holes for exposing the redistribution pads while burying the chip and the substrate; and vias connected to the redistribution pads through the via holes. The semiconductor package including chips of various sizes is fabricated using the chip-embedded interposer substrate.
摘要:
A device includes a base substrate, a package including an encapsulated die, the package at least partially embedded in the base substrate, and a wiring portion on the package and extending across at least a portion of the base substrate adjacent to the package.
摘要:
In an integrated circuit (IC) chip and a flip chip package having the same, no wiring line is provided and the first electrode pad does not make contact with the wiring line in a pad area of the IC chip. Thus, the first bump structure makes contact with the first electrode regardless of the wiring line in the pad area. The second electrode pad makes contact with the wiring line in a pseudo pad area of the IC chip. Thus, the second bump structure in the pseudo pad area makes contact with an upper surface of the second electrode at a contact point(s) spaced apart from the wiring line under the second electrode.
摘要:
In an integrated circuit (IC) chip and a flip chip package having the same, no wiring line is provided and the first electrode pad does not make contact with the wiring line in a pad area of the IC chip. Thus, the first bump structure makes contact with the first electrode regardless of the wiring line in the pad area. The second electrode pad makes contact with the wiring line in a pseudo pad area of the IC chip. Thus, the second bump structure in the pseudo pad area makes contact with an upper surface of the second electrode at a contact point(s) spaced apart from the wiring line under the second electrode.
摘要:
A semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes a first package that a first semiconductor chip is mounted on a front side of a first substrate and a redistributed pad including a first redistributed pad electrically connected to the first substrate and a second redistributed pad electrically connected to the first redistributed pad is disposed on the first semiconductor chip and a second package that a second semiconductor chip is mounted on a front side of a second substrate, the second package including a connection member electrically connected to the second redistributed pad. The connection member electrically connected to the redistributed pad electrically connects the first and second packages to each other.
摘要:
A semiconductor chip package including a semiconductor chip including a first surface having bonding pads, a second surface facing the first surface, and sidewalls; a molding extension part surrounding the second surface and the sidewalls of the semiconductor chip; redistribution patterns extending from the bonding pads over the molding extension part, and electrically connected to the bonding pads; bump solder balls on the redistribution patterns; and a molding layer configured to cover the first surface of the semiconductor chip and the molding extension part, while exposing portions of each of the bump solder balls. The molding layer has concave meniscus surfaces between the bump solder balls adjacent to each other.
摘要:
In one embodiment, a semiconductor package disclosed herein can be generally characterized as including a resin substrate having a first recess, a first interconnection disposed on a surface of the first recess, a first semiconductor chip disposed in the first recess, and an underfill resin layer substantially filling the first recess and covering a side surface of the first semiconductor chip. The first semiconductor chip is electrically connected to the first interconnection.
摘要:
A flip-chip assembly comprises a semiconductor chip, a substrate, a first buffer layer, a second buffer layer and a conductive bump. The semiconductor chip includes a first region and a second region adjacent to the first region. The substrate is disposed under the semiconductor chip. The first buffer layer is disposed between the first region of the semiconductor chip and the substrate. The second buffer layer is disposed between the second region of the semiconductor chip and the substrate. The conductive bump is formed through the second buffer layer and electrically connects the semiconductor chip to the substrate.
摘要:
A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.