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    Gland sealing steam supply system for steam turbines
    21.
    发明授权
    Gland sealing steam supply system for steam turbines 失效
    蒸汽轮机密封蒸汽供应系统

    公开(公告)号：US4793141A

    公开(公告)日：1988-12-27

    申请号：US120097

    申请日：1987-11-13

    申请人： Eiji Yanai ,  Tsuguo Hashimoto ,  Kiyoshi Takeuchi ,  Takashi Asao ,  Yoshiki Noguchi

    发明人： Eiji Yanai ,  Tsuguo Hashimoto ,  Kiyoshi Takeuchi ,  Takashi Asao ,  Yoshiki Noguchi

    IPC分类号： F01D11/04 ,  F01D11/06 ,  F01K23/10 ,  F01K21/00

    CPC分类号： F01K23/106 ,  F01D11/04 ,  F01D11/06 ,  F05D2240/63

    摘要： In order to recover the heat of the waste gas from a gas turbine, a waste heat recovery boiler is provided, which has a high-pressure steam generating portion consisting of an economizer, a high-pressure steam generator and a superheater, and a low-pressure steam generating portion consisting of an economizer, and a low-pressure steam generator. The steam from the high-pressure generating portion is supplied to the turbine through a high-pressure steam pipe, and the steam from the low-pressure steam generating portion to the same through a low-pressure steam pipe. The high-pressure gland sealing steam is supplied to a high-pressure side steam gland portion the steam turbine through a high-pressure steam extracton pipe branching from the high-pressure steam pipe, a steam pressure regulator adapted to regulate the steam pressure and introduce the excess steam to a condenser, and a high-pressure gland sealing steam pipe. The low-pressure gland sealing steam is supplied to a low-pressure side steam gland portion through a low-pressure steam extraction pipe branching from the low-pressure steam pipe, a reducing valve adapted to supply steam of a constant pressure due to a depressurization operation, and a low-pressure gland sealing steam pipe.

    摘要翻译： 为了从燃气轮机回收废气的热量，提供了一种废热回收锅炉，其具有由节能器，高压蒸汽发生器和过热器构成的高压蒸汽发生部，低 压缩蒸汽发生部分由节能器和低压蒸汽发生器组成。 来自高压发生部分的蒸汽通过高压蒸汽管道被供应到涡轮机，并且通过低压蒸汽管将蒸汽从低压蒸汽发生部分供应到它们。 高压密封蒸汽通过高压蒸汽管道分支的高压蒸汽提取管提供给蒸汽轮机的高压侧蒸汽压盖部分，适用于调节蒸汽压力并引入 过剩的蒸汽到冷凝器，以及一个高压密封的蒸汽管。 通过从低压蒸汽管分支的低压蒸汽抽出管将低压侧密封蒸汽供给到低压侧蒸汽密封部分，该减压阀适于由于减压而提供恒定压力的蒸汽 操作和低压密封蒸汽管。

    Pressure sensor
    22.
    发明授权
    Pressure sensor 失效
    压力传感器

    公开(公告)号：US4524625A

    公开(公告)日：1985-06-25

    申请号：US574693

    申请日：1984-01-24

    申请人： Kiyoshi Takeuchi

    发明人： Kiyoshi Takeuchi

    IPC分类号： G01L21/10 ,  G01L23/10 ,  F16B31/02

    CPC分类号： G01L23/10 ,  Y10S73/04

    摘要： A pressure transducer suitable for remote sensing of pressure in hostile environments consists generally of a body and a sensing member. The body has first and second opposing inner surfaces defining an inside space therebetween. The sensing member is disposed within the inside space and has first and second opposite surfaces. The first surface of the sensing member contacts the first inner surface of the body. The second surface of the sensing member is separated from the second inner surface of the body by a predetermined clearance so that the second surface of the sensing member comes into contact with the second inner surface of the body only when the external force exerted on the body exceeds a predetermined level.

    摘要翻译： 适用于在恶劣环境中远程感测压力的压力传感器通常由身体和感测构件组成。 主体具有限定其间的内部空间的第一和第二相对的内表面。 感测构件设置在内部空间内并且具有第一和第二相对表面。 感测构件的第一表面接触身体的第一内表面。 感测构件的第二表面与本体的第二内表面以预定的间隙分开，使得感测构件的第二表面仅在施加在主体上的外力时才与主体的第二内表面接触 超过预定水平。

    Vibration sensor for an automotive vehicle
    23.
    发明授权
    Vibration sensor for an automotive vehicle 失效
    汽车用振动传感器

    公开(公告)号：US4373378A

    公开(公告)日：1983-02-15

    申请号：US202271

    申请日：1980-10-30

    申请人： Takeshi Fujishiro ,  Kiyoshi Takeuchi ,  Toru Kita

    发明人： Takeshi Fujishiro ,  Kiyoshi Takeuchi ,  Toru Kita

    IPC分类号： G01H11/08 ,  G01L23/22 ,  H04R1/46 ,  H04R17/02

    CPC分类号： G01L23/222 ,  G01H11/08

    摘要： A vibration sensor for an automotive vehicle having a multi-peak vibration characteristic of wider responsiveness and of a higher S/N ratio. The vibration sensor comprises a plurality of piezoelectric vibrators so arranged that the piezoelectric voltage signals from the vibrators are synthesized in reverse polarity between two elements having two adjacent resonant frequencies, when the element are deformed in the same direction. Therefore, the voltages are synthesized in the same polarity, when engine knocking frequency lies between two adjacent sensor resonant frequencies, because a vibrator is 180 degrees out of phase with another adjacent vibrator.

    摘要翻译： 一种用于机动车辆的振动传感器，具有响应性更广，S / N比高的多峰振动特性。 振动传感器包括多个压电振动器，其被布置成当元件沿相同方向变形时，来自振动器的压电电压信号以具有两个相邻谐振频率的两个元件之间的相反极性合成。 因此，当发动机爆震频率位于两个相邻的传感器谐振频率之间时，由于振动器与另一个相邻的振动器相差180度，所以电压被合成为相同的极性。

    Sensor, solid-state imaging device, and imaging apparatus and method of manufacturing the same
    27.
    发明授权
    Sensor, solid-state imaging device, and imaging apparatus and method of manufacturing the same 失效
    传感器，固态成像装置及其制造方法

    公开(公告)号：US08035182B2

    公开(公告)日：2011-10-11

    申请号：US12354428

    申请日：2009-01-15

    申请人： Kiyoshi Takeuchi

    发明人： Kiyoshi Takeuchi

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

    摘要： A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.

    摘要翻译： 提供传感器。 传感器包括半导体层; 光电二极管，杂质掺杂多晶硅层; 和栅电极。 在半导体层中形成光电二极管。 杂质掺杂多晶硅层形成在半导体层上方。 栅电极向多晶硅层施加栅极电压。 布线层设置在半导体层的第一表面上，并且光入射到其第二表面上。

    Fin-type field effect transistor and semiconductor device
    28.
    发明授权
    Fin-type field effect transistor and semiconductor device 有权
    鳍型场效应晶体管和半导体器件

    公开(公告)号：US07859065B2

    公开(公告)日：2010-12-28

    申请号：US11921685

    申请日：2006-06-05

    申请人： Kiyoshi Takeuchi ,  Katsuhiko Tanaka

    发明人： Kiyoshi Takeuchi ,  Katsuhiko Tanaka

    IPC分类号： H01L27/088

    CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/785

    摘要： A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode comprising an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion comprises an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

    摘要翻译： 通过形成包括檐结构的栅电极，通过离子注入将均匀的掺杂剂浓度保持在半导体内，可以在源极/漏极区之间保持恒定的距离而不提供栅极侧壁。 结果，可以获得元件性能和操作性能优异的FinFET。 一种场效应晶体管，其中栅极结构体是在沟道长度方向上朝向源极和漏极区域侧突出的突起，并且沟道长度方向宽度大于栅电极中与绝缘膜相邻的部分的沟道长度方向宽度;以及 突起包括由在半导体层的顶表面上沿栅电极延伸方向延伸的突起形成的檐结构。

    Semiconductor device and manufacturing method thereof
    29.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07830703B2

    公开(公告)日：2010-11-09

    申请号：US11570037

    申请日：2005-05-25

    申请人： Koichi Takeda ,  Masahiro Nomura ,  Kiyoshi Takeuchi ,  Hitoshi Wakabayashi ,  Shigeharu Yamagami ,  Risho Koh ,  Koichi Terashima ,  Katsuhiko Tanaka ,  Masayasu Tanaka

    发明人： Koichi Takeda ,  Masahiro Nomura ,  Kiyoshi Takeuchi ,  Hitoshi Wakabayashi ,  Shigeharu Yamagami ,  Risho Koh ,  Koichi Terashima ,  Katsuhiko Tanaka ,  Masayasu Tanaka

    IPC分类号： G11C11/00

    CPC分类号： H01L27/11 ,  H01L27/1104 ,  H01L27/1108 ,  H01L29/785 ,  Y10S257/903

    摘要： A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

    摘要翻译： 一种具有SRAM单元单元的半导体器件，每个SRAM单元包括一对第一驱动晶体管和第二驱动晶体管，一对第一负载晶体管和第二负载晶体管，以及一对第一存取晶体管和第二存取晶体管，其中 每个晶体管包括从衬底平面向上突出的半导体层，在半导体层的相对侧上延伸以跨越半导体层的顶部的栅极电极，插入在栅极电极和半导体之间的栅极绝缘膜 层，以及形成在半导体层中的一对源极/漏极区域; 并且第一和第二驱动晶体管的沟道宽度均大于至少任一个负载晶体管或每个存取晶体管的沟道宽度。

    SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND SEMICONDUCTOR MANUFACTURING METHOD
    30.
    发明申请
    SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND SEMICONDUCTOR MANUFACTURING METHOD 审中-公开
    半导体器件，集成电路和半导体制造方法

    公开(公告)号：US20090321849A1

    公开(公告)日：2009-12-31

    申请号：US12302121

    申请日：2007-05-23

    申请人： Makoto Miyamura ,  Kiyoshi Takeuchi

    发明人： Makoto Miyamura ,  Kiyoshi Takeuchi

    IPC分类号： H01L27/088 ,  H01L21/8234

    CPC分类号： H01L29/785 ,  H01L21/823412 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/105 ,  H01L29/66772 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/78696

    摘要： A semiconductor circuit has a plurality of MISFETs formed with channel films comprised of semiconductor layers on an insulation film. Channel film thicknesses of each MISFET are different. A correlation relationship is fulfilled where concentration per unit area of impurity contained in the channel films becomes larger for MISFETs of a thicker channel film thickness. As a result, it is possible to suppress deviation of threshold voltage caused by changes in channel film thickness. In this event, designed values for the channel film thicknesses of the plurality of MISFETs are preferably the same, and the difference in channel film thickness of each MISFET may depend on statistical variation from the designed values. The concentration of the impurity per unit area is proportional to the channel film thickness, or is a function that is convex downwards with respect to the channel film thickness.

    摘要翻译： 半导体电路具有由绝缘膜上的半导体层构成的沟道膜形成的多个MISFET。 每个MISFET的通道膜厚度不同。 对于较厚的沟道膜厚度的MISFET，通道膜中所含的杂质的每单位面积的浓度越大，就能实现相关关系。 结果，可以抑制由沟道膜厚度的变化引起的阈值电压的偏差。 在这种情况下，多个MISFET的沟道膜厚度的设计值优选相同，并且每个MISFET的沟道膜厚度差可以取决于与设计值的统计变化。 每单位面积的杂质浓度与沟道膜厚度成比例，或者是相对于沟道膜厚度向下凸的函数。