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    LIGHT-EMITTING DEVICE AND ILLUMINATING DEVICE
    21.
    发明申请
    LIGHT-EMITTING DEVICE AND ILLUMINATING DEVICE 审中-公开
    发光装置和照明装置

    公开(公告)号：US20100053970A1

    公开(公告)日：2010-03-04

    申请号：US12411912

    申请日：2009-03-26

    申请人： Takahiro Sato ,  Shinji Saito ,  Shinya Nunoue ,  Yasushi Hattori ,  Maki Sugai

    发明人： Takahiro Sato ,  Shinji Saito ,  Shinya Nunoue ,  Yasushi Hattori ,  Maki Sugai

    IPC分类号： G02B27/20 ,  G02F1/35

    CPC分类号： G02B6/001 ,  G02B6/0096 ,  G02F1/133603 ,  G02F1/133609 ,  G02F2001/133614 ,  G02F2201/02

    摘要： A light-emitting device includes: a first laser light source; a first diffusion member provided along a light axis of a first light radiated form the first laser light source; and a first wavelength converter provided along the first diffusion member. The first diffusion member generates a second light from the first light. The second light outgoes in a direction different from the light axis direction of the first light. A ratio of generating the second light from the first light in a first part is higher than that in a second part, wherein an intensity of the first light in the first part is lower than that in a second part. The first wavelength converter absorbs the second light and emitting a third light having a different wavelength from the second light.

    摘要翻译： 发光装置包括：第一激光光源; 沿着从所述第一激光光源照射的第一光的光轴设置的第一漫射部件; 以及沿着第一扩散部件设置的第一波长转换器。 第一漫射构件从第一光产生第二光。 第二光在与第一光的光轴方向不同的方向上出射。 在第一部分中产生来自第一光的第二光的比例高于第二部分中的第一光的比率，其中第一部分中的第一光的强度低于第二部分中的第一光的强度。 第一波长转换器吸收第二光并发射与第二光不同波长的第三光。

    Semiconductor light emitting device with an aluminum containing layer formed thereon
    25.
    发明授权
    Semiconductor light emitting device with an aluminum containing layer formed thereon 有权
    其上形成有铝层的半导体发光器件

    公开(公告)号：US09093588B2

    公开(公告)日：2015-07-28

    申请号：US13032907

    申请日：2011-02-23

    申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01L33/26 ,  H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

    Semiconductor light emitting device and manufacturing method of the same
    26.
    发明授权
    Semiconductor light emitting device and manufacturing method of the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08729575B2

    公开(公告)日：2014-05-20

    申请号：US13215628

    申请日：2011-08-23

    申请人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L31/072

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/3063 ,  H01S2304/04

    摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.

    摘要翻译： 根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。 氮化镓铝层中的铟浓度在​​1E18原子/ cm3至1E20原子/ cm3之间。 碳浓度等于或小于6E17原子/ cm3。 当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

    LIGHT EMITTING DEVICE
    27.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20110157864A1

    公开(公告)日：2011-06-30

    申请号：US12876774

    申请日：2010-09-07

    申请人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

    发明人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

    IPC分类号： F21V9/16

    CPC分类号： F21K9/68 ,  G02F1/133615 ,  G02F2001/133614

    摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.

    摘要翻译： 根据实施例，提供了一种发光器件。 发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光 光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。