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163 条记录 (耗时 0.047 秒)

    Thermal interface apparatus
    23.
    发明申请
    Thermal interface apparatus 有权
    热接口设备

    公开(公告)号：US20070177367A1

    公开(公告)日：2007-08-02

    申请号：US11344657

    申请日：2006-02-01

    申请人： Sean Bailey ,  Richard Blanco ,  David Edwards ,  Supratik Guha ,  Michael Hillman ,  Yves Martin ,  Phillip Mort ,  Roger Schmidt ,  Prabjit Singh ,  Ronald Smith ,  Gregory Tice ,  Theodore van Kessel

    发明人： Sean Bailey ,  Richard Blanco ,  David Edwards ,  Supratik Guha ,  Michael Hillman ,  Yves Martin ,  Phillip Mort ,  Roger Schmidt ,  Prabjit Singh ,  Ronald Smith ,  Gregory Tice ,  Theodore van Kessel

    IPC分类号： H05K7/12

    CPC分类号： H01L23/42 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An apparatus for conducting heat from a computer component to a heat sink. The invention may include a thermal interface material (TIM). The invention may further include a seal or gasket that at least partially encloses the TIM. The gasket may facilitate retaining the TIM within its sidewall, and thus in place on or near a computer component. Generally, the gasket may be placed between the computer component (or a silicon board or other material upon which the computer component is located) and a heat sink. An insert may be placed within the gasket and define an aperture. The chip seats in the aperture and thus is spatially located with respect to the insert. The TIM abuts both the computer component and a heat sink. A desiccant may be located within the gasket and absorb any moisture diffusing or migrating through the gasket.

    摘要翻译： 一种用于将热量从计算机部件传导到散热器的装置。 本发明可以包括热界面材料（TIM）。 本发明还可以包括至少部分地包围TIM的密封件或垫圈。 垫圈可以有助于将TIM保持在其侧壁内，从而在计算机部件上或附近保持适当的位置。 通常，垫圈可以放置在计算机部件（或者硅板或计算机部件所在的其它材料）和散热器之间。 插入件可以放置在垫圈内并且限定孔。 芯片位于孔中并因此在空间上相对于插入件定位。 TIM邻接计算机组件和散热器。 干燥剂可以位于垫圈内并吸收任何通过垫片扩散或迁移的水分。

    Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair
    26.
    发明授权
    Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair 失效
    金属嵌入式钝化层结构，用于微电子互连形成，定制和修复

    公开(公告)号：US06255671B1

    公开(公告)日：2001-07-03

    申请号：US09002840

    申请日：1998-01-05

    申请人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Sampath Purushothaman

    发明人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Sampath Purushothaman

    IPC分类号： H01L3300

    CPC分类号： H01L21/76894 ,  H01L21/76823 ,  H01L21/76838 ,  H01L23/5254 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorption of light having a predetermined wavelength. Single films comprised of AlN are also within the scope of this invention, wherein an Al trace or interconnect is formed by laser radiation of wavelength 248 nm so as to contact circuitry that exists under the film. Multilayered stacks of films are also within the scope of the teachings of this invention. In this case each film layer may be separately deposited and then illuminated to selectively form the desired electrical connection(s), which may also connect to conductive feature(s) in an underlying layer, or a plurality of metal nitride layers are stacked bottom to top in order of increasing electronic band gap energy value, and then the conductive features are written into selective ones of the layers by controlling the wavelength of the light to be absorbed in a desired layer. The teachings of this invention can be employed to fabricate fuses and anti-fuses enabling selective circuit customization, test and repair. Also disclosed is a technique for forming electrical resistors in a metal nitride layer by adjusting the electrical resistance of the metallization formed from the metal nitride film layer.

    摘要翻译： 结构包括形式为MN的金属氮化物膜，其中M选自Ga，In，AlGa，AlIn和AlGaIn。 该结构具有通过由具有预定波长的光吸收驱动的热处理而形成在金属氮化物膜内和从金属氮化物膜形成的至少一个导电金属区域。 由AlN组成的单个膜也在本发明的范围内，其中通过波长为248nm的激光辐射形成Al迹线或互连，以便接触存在于膜下面的电路。 多层薄膜也在本发明的教导的范围内。 在这种情况下，每个膜层可以被分开沉积，然后照亮以选择性地形成所需的电连接，其也可以连接到下层中的导电特征，或者多个金属氮化物层被堆叠到底部 顶部按照增加电子带隙能量值的顺序，然后通过控制要在所需层中吸收的光的波长将导电特征写入选择层中。 本发明的教导可用于制造保险丝和抗熔丝，从而能够进行选择性电路定制，测试和修理。 还公开了通过调整由金属氮化物膜层形成的金属化层的电阻来形成金属氮化物层中的电阻器的技术。

    Column III metal nitride films as phase change media for optical recording
    27.
    发明授权
    Column III metal nitride films as phase change media for optical recording 失效
    作为用于光学记录的相变介质的III族金属氮化物膜

    公开(公告)号：US5874147A

    公开(公告)日：1999-02-23

    申请号：US892826

    申请日：1997-07-15

    申请人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Wade Wai-Chung Tang

    发明人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Wade Wai-Chung Tang

    IPC分类号： B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253 ,  B32B3/00

    CPC分类号： G11B7/253 ,  G11B7/00455 ,  G11B7/0052 ,  G11B7/24 ,  G11B7/243 ,  G11B2007/2431 ,  G11B2007/24322 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system. Additional advantages offered by these materials over present day phase change media include higher differences in reflectivity contrast and suitability for use with short wavelength laser diodes (460 nm and lower) which are expected to be introduced into optical recording technology in the next 5 years. The band gap of alloys of nitrides of column III metals can be tuned by changing the relative fractions of the column III metals to continuously vary the band gap so as to be compatible with lasers having photon energies within the range. The low absorptivity and hence high transmissitivity, at the appropriate recording wavelength, of the starting phase also offers the potential application of these materials in a multiple-recording-layer format.

    摘要翻译： 本发明提供了基于第三列金属的氮化物的半导体的用于光学存储的相变介质。 这些宽带隙半导体的薄膜的表面可以通过用等于或大于这些材料的带隙的能量的光子照射超过临界阈值的功率密度来金属化（通过解吸氮）。 作为这种可写入金属化的结果，由于金属与其相应的宽间隙氮化物之间的反射率的差异非常大，所以这些材料是写入一次的优异候选物，读取多次存储介质。 此外，一旦氮被解吸，写入的金属相不能再回到氮化物相，因此介质是稳定的，并且是真正的一次写入系统。 这些材料在现在的相变介质中提供的另外的优点包括在短波长激光二极管（460nm或更低）中使用的反射率对比度和适用性的较高差异，预期在未来5年内将其引入到光学记录技术中。 可以通过改变第III列金属的相对分数来连续改变带隙来调节第III列金属的氮化物的带隙，从而与具有该光子能量的激光器兼容。 起始阶段的适当记录波长下的低吸收率和高透射率也提供了这些材料在多层记录层格式中的潜在应用。

    TRANSPORTABLE PHOTOVOLTAIC SYSTEM
    30.
    发明申请
    TRANSPORTABLE PHOTOVOLTAIC SYSTEM 有权
    运输光伏系统

    公开(公告)号：US20130199594A1

    公开(公告)日：2013-08-08

    申请号：US13365301

    申请日：2012-02-03

    申请人： Supratik Guha ,  Yves C. Martin ,  David B. Mitzi ,  Robert L. Sandstrom ,  Theodore G. van Kessel

    发明人： Supratik Guha ,  Yves C. Martin ,  David B. Mitzi ,  Robert L. Sandstrom ,  Theodore G. van Kessel

    IPC分类号： H01L31/052 ,  H01L31/18

    CPC分类号： H02S20/30 ,  H01L31/042 ,  H01L31/0547 ,  H02S10/40 ,  H02S20/32 ,  H02S30/20 ,  Y02E10/52 ,  Y10T29/49355

    摘要： A transportable photovoltaic system includes a plurality of photovoltaic devices, a composite frame to which the plurality of photovoltaic devices are affixed, and a base structure to which the composite frame is movably attached through at least one variable-angle mount structure. The orientation of the frame and the light concentrating elements relative to the base structure can be altered employing the at least one variable-angle mount structure. The frame and the plurality of photovoltaic devices can be assembled prior to shipping, and the base structure can be manufactured on site. The transportable photovoltaic system is not affixed to ground or other fixture, but can be picked up at any time during the operational lifetime. The transportable photovoltaic system can be rapidly deployed with little or no site preparation requirement other than generally level ground, and can be retracted to a lower exposure position to avoid storm and/or hazardous conditions.

    摘要翻译： 可移动光伏系统包括多个光伏器件，固定多个光伏器件的复合框架，以及基础结构，复合框架通过至少一个可变角度安装结构可移动地附接到该基座结构。 可以使用至少一个可变角度安装结构来改变框架和光聚集元件相对于基部结构的取向。 框架和多个光伏器件可以在运输之前组装，并且可以现场制造基座结构。 可运输光伏系统不固定在地面或其他灯具上，但可以在使用寿命期间的任何时间进行拾取。 可运输的光伏系统可以很快地部署，除了一般水平地面之外很少或没有现场准备要求，并且可以缩回到较低的暴露位置以避免暴风雨和/或危险状况。