公开(公告)号：US20100027576A1

公开(公告)日：2010-02-04

申请号：US12509676

申请日：2009-07-27

申请人： Tetsuya Takeuchi

发明人： Tetsuya Takeuchi

IPC分类号： H01S5/00 ,  H01L21/00

CPC分类号： H01S5/18391 ,  H01S5/0425 ,  H01S5/0601 ,  H01S5/18311 ,  H01S5/32341 ,  H01S5/327

摘要： A surface emitting laser configured by laminating on a substrate a lower reflection mirror, an active layer and an upper reflection mirror includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a convex high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, and an absorption layer causing band-to-band absorption is provided in the laminated structure.

摘要翻译： 通过在基板上层叠下反射镜，有源层和上反射镜而构成的表面发射激光器包括在上反射镜的发光部中具有用于控制由低反射率区域构成的反射率的结构， 形成在低反射率区域的中心部分并且以λ的波长振荡的凸高反射率区域，其中上反射镜由基于通过层叠多个层而形成的层叠结构的多层膜反射镜构成 ，并且在层叠结构中设置引起带间吸收的吸收层。

公开(公告)号：US07562695B2

公开(公告)日：2009-07-21

申请号：US11592018

申请日：2006-11-02

申请人： Shigeru Kadota ,  Kazutoshi Nishizawa ,  Tetsuya Takeuchi ,  Akira Ito ,  Satoru Nakamura

发明人： Shigeru Kadota ,  Kazutoshi Nishizawa ,  Tetsuya Takeuchi ,  Akira Ito ,  Satoru Nakamura

IPC分类号： F28D1/02 ,  F24D19/02

CPC分类号： F28D15/0266 ,  F28D15/0233 ,  F28D15/0275 ,  F28D15/0283 ,  F28F1/022 ,  F28F1/128 ,  F28F9/26 ,  H05K7/20609

摘要： A cooling device has a case defining a first space through which a first fluid flows and a second space through which a second fluid having the temperature lower than that of the first fluid flows. A first heat exchanger is disposed in the first space for performing heat exchange between the first fluid and a refrigerant, thereby to evaporate the refrigerant. A second heat exchanger is disposed in the second space for performing heat exchange between the second fluid and the refrigerant evaporated in the first heat exchanger, thereby to transfer heat of the refrigerant to the second fluid. The case defines a first dimension in a first direction and a second dimension in a second direction perpendicular to the first direction in a transverse cross-section. The second dimension is larger than the first dimension. The first space and the second space are arranged in the second direction.

摘要翻译： 冷却装置具有限定第一流体流过的第一空间的壳体和具有低于第一流体的温度的第二流体的第二空间。 第一热交换器设置在第一空间中，用于在第一流体和制冷剂之间进行热交换，从而蒸发制冷剂。 第二热交换器设置在第二空间中，用于在第二流体和在第一热交换器中蒸发的制冷剂之间进行热交换，从而将制冷剂的热量传递到第二流体。 壳体在横截面中限定第一方向上的第一尺寸和垂直于第一方向的第二方向的第二尺寸。 第二维度大于第一维度。 第一空间和第二空间被布置在第二方向上。

公开(公告)号：US20090057693A1

公开(公告)日：2009-03-05

申请号：US12259420

申请日：2008-10-28

申请人： Tetsuya Takeuchi ,  Makoto Koto ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Takao Yonehara

发明人： Tetsuya Takeuchi ,  Makoto Koto ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Takao Yonehara

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  B41J2/45

摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.

摘要翻译： 可以在不分离金属反射层的情况下制造发光元件阵列。 发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在 基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。 多个发光元件部分被分成多个块。 每个块包括多个发光部分。 发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。

公开(公告)号：US07491976B2

公开(公告)日：2009-02-17

申请号：US11782935

申请日：2007-07-25

申请人： Tetsuya Takeuchi ,  Makoto Koto ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Takao Yonehara

发明人： Tetsuya Takeuchi ,  Makoto Koto ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Takao Yonehara

IPC分类号： H01L33/00

CPC分类号： B21D43/09 ,  B21D43/021 ,  B41J2/45 ,  B65H23/1884 ,  H01L27/153 ,  Y10T83/0481 ,  Y10T83/148 ,  Y10T83/159

摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.

摘要翻译： 可以在不分离金属反射层的情况下制造发光元件阵列。 发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在 基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。 多个发光元件部分被分成多个块。 每个块包括多个发光部分。 发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。

公开(公告)号：US20080212631A1

公开(公告)日：2008-09-04

申请号：US12028562

申请日：2008-02-08

申请人： Tetsuya Takeuchi ,  Mamoru Uchida ,  Tomoyuki Miyamoto ,  Fumio Koyama

发明人： Tetsuya Takeuchi ,  Mamoru Uchida ,  Tomoyuki Miyamoto ,  Fumio Koyama

IPC分类号： H01S5/18

CPC分类号： H01S5/34326 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/1039 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/2201 ,  H01S5/3072 ,  H01S5/3213 ,  H01S5/3436

摘要： A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.

摘要翻译： 红色表面发射激光器元件包括第一反射器，包括p型半导体多层膜的第二反射器，第一反射器和第二反射器之间的有源层以及有源层和第二反射器之间的p型半导体间隔层 反射器，p型半导体间隔层的厚度为100nm以上且350nm以下。

公开(公告)号：US20080056320A1

公开(公告)日：2008-03-06

申请号：US11840602

申请日：2007-08-17

申请人： Tetsuya Takeuchi

发明人： Tetsuya Takeuchi

IPC分类号： H01S5/30

CPC分类号： H01S5/18369 ,  B82Y20/00 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/34333

摘要： A novel semiconductor laser device is provided which can suppress internal optical absorption even when In is used as a material for a semiconductor multilayer mirror containing a nitride. The semiconductor laser device has two mirrors disposed to face each other, and an active layer disposed therebetween. At least one of the mirrors is a multilayer mirror having first nitride semiconductor layers containing Ga and second nitride semiconductor layers containing Al, which are alternately laminated to each other. The second nitride semiconductor layer contains In and includes a first region having a refractive index lower than that of the first nitride semiconductor layer, and a second region having a refractive index lower than that of the first nitride semiconductor layer and an In concentration lower than that of the first region. The second region is disposed closer to the active layer than the first region.

摘要翻译： 提供了一种新颖的半导体激光器件，其即使在将In用作含有氮化物的半导体多层反射镜的材料时也能够抑制内部光吸收。 半导体激光装置具有彼此相对设置的两个反射镜，并且设置在其间的有源层。 至少一个反射镜是具有包含Ga的第一氮化物半导体层和含有Al的第二氮化物半导体层的多层反射镜，其彼此交替层叠。 第二氮化物半导体层包含In并且包括折射率低于第一氮化物半导体层的折射率的第一区域和具有低于第一氮化物半导体层的折射率的折射率的第二区域以及低于第一氮化物半导体层的In浓度的In浓度 的第一个地区。 第二区域设置成比第一区域更靠近有源层。

公开(公告)号：US20070148791A1

公开(公告)日：2007-06-28

申请号：US11409269

申请日：2006-04-24

申请人： Kazutoshi Izumi ,  Tetsuya Takeuchi

发明人： Kazutoshi Izumi ,  Tetsuya Takeuchi

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.

摘要翻译： 公开了一种测量薄膜厚度的方法。 该方法包括在基板上形成铁电电容器的步骤，形成绝缘膜以覆盖铁电电容器的步骤，以及光学测量铁电体电容器的电极上的绝缘膜的厚度的步骤。

公开(公告)号：US06934312B2

公开(公告)日：2005-08-23

申请号：US10261754

申请日：2002-09-30

申请人： Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

发明人： Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

IPC分类号： C23C16/34 ,  H01L21/205 ,  H01S5/183 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/32341 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S2304/025

摘要： A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.

摘要翻译： 公开了一种用于制造发光器件的系统。 该系统包含生长室和至少一个被引入生长室的氮前体。 至少一种氮前体在至少一个III族原子和至少一个氮原子之间具有直接键合。 此外，氮前体用于制造构成包含铟，镓，砷和氮的发光器件的有源区的一部分的层，其中有源区产生波长在约1.2至1.6范围内的光 微米。 还公开了一种用于制造半导体结构的方法。 该方法包括提供衬底并使用至少一种具有至少一个III族原子和至少一个氮原子之间的直接键的氮前驱体在衬底上生长包含铟，镓，砷和氮的层。

公开(公告)号：US06800143B1

公开(公告)日：2004-10-05

申请号：US10204408

申请日：2002-11-21

申请人： Tomoyuki Kakeshita ,  Takashi Fukuda ,  Tetsuya Takeuchi

发明人： Tomoyuki Kakeshita ,  Takashi Fukuda ,  Tetsuya Takeuchi

IPC分类号： H01F100

CPC分类号： H01F1/0306 ,  C21D6/00 ,  C22C38/002 ,  H01L41/20 ,  Y02P10/212

摘要： The present invention provides a supermagnetostrictive alloy capable of providing a larger shift (lager magnetostriction) with excellent workability, which is applicable to an actuator in response to advances in downsizing of electronic devices and upgrading of medical instruments and production apparatuses. The supermagnetostrictive alloy has a degree of order of 0.6 to 0.95 achieved by subjecting Fe3−xPt1+x(−0.02≦×≦0.2) to a heat treatment. The present invention also provides a method for the preparation of a supermagnetostrictive alloy having a magnetostriction of 0.3% or more, particularly 0.5% or more, comprising the steps of subjecting the Fe3−xPt1+x alloy of a raw material to a homogenization annealing, and then subjecting the resulting product to a heat treatment at 700 to 1000 K for 0.5 to 600 hours.

摘要翻译： 本发明提供一种能够提供更好的可移动性（超大型磁致伸缩）的超磁致伸缩合金，其具有优异的可加工性，其适用于致动器，以响应电子设备的小型化和医疗仪器和生产设备的升级。 超磁致伸缩合金具有通过使Fe 3-xPt 1 + x（-0.02 <= x <= 0.2）进行热处理而获得的0.6至0.95的量级。 本发明还提供一种具有0.3％以上，特别是0.5％以上的磁致伸缩性的超磁致伸缩合金的制造方法，该方法包括以下步骤：对原料的Fe 3-xPt 1 + x合金进行均化退火， 然后将所得产物在700至1000K下进行热处理0.5至600小时。

公开(公告)号：US06683327B2

公开(公告)日：2004-01-27

申请号：US09993862

申请日：2001-11-13

申请人： Michael R. Krames ,  Tetsuya Takeuchi ,  Junko Kobayashi

发明人： Michael R. Krames ,  Tetsuya Takeuchi ,  Junko Kobayashi

IPC分类号： H01L29227

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0075

摘要： A light emitting device including a nucleation layer containing aluminum is disclosed. The thickness and aluminum composition of the nucleation layer are selected to match the index of refraction of the substrate and device layers, such that 90% of light from the device layers incident on the nucleation layer is extracted into the substrate. In some embodiments, the nucleation layer is AlGaN with a thickness between about 1000 and about 1200 angstroms and an aluminum composition between about 2% and about 8%. In some embodiments, the nucleation layer is formed over a surface of a wurtzite substrate that is miscut from the c-plane of the substrate. In some embodiments, the nucleation layer is formed at high temperature, for example between 900° and 1200° C. In some embodiments, the nucleation layer is doped with Si to a concentration between about 3e18 cm−3 and about 5e19 cm−3.

摘要翻译： 公开了一种包含含有铝的成核层的发光器件。 选择成核层的厚度和铝组成以匹配衬底和器件层的折射率，使得入射到成核层的器件层的90％的光被提取到衬底中。 在一些实施方案中，成核层是AlGaN，其厚度为约1000至约1200埃，铝组合物为约2％至约8％。 在一些实施方案中，成核层形成在纤维素基质的与基底的c面杂交的表面上。 在一些实施方案中，成核层在高温下形成，例如在900℃至1200℃之间。在一些实施方案中，成核层掺杂Si至约3埃18厘米-3至约5埃19厘米3的浓度， -3>。