公开(公告)号：US20160167079A1

公开(公告)日：2016-06-16

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA ,  Minoru KUBOTA ,  Hiroyuki IDE

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00

CPC classification number: G05B15/02 ,  B05D1/005 ,  B05D3/042 ,  B05D3/0466 ,  B05D3/104 ,  G03F7/162 ,  H01L21/6715

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

Abstract translation: 提供了一种涂布方法，其可以在减少涂布溶液的量的同时将涂布溶液均匀地涂布在基材表面上。 将涂布溶液涂布在晶片上的涂布方法包括以下步骤：向晶片供给涂布溶液的溶剂，以在晶片的周边区域形成溶剂的环状液膜; 在第一旋转速度（时间t1-t2）旋转晶片的同时将涂布溶液供应到晶片的中心; 并且通过以高于第一转速（时刻t4-t5）的第二转速旋转晶片，使涂布液在晶片上扩散。 溶剂的供给继续进行，直到涂布液与溶剂的液膜接触（时刻t0-t3）为止。

公开(公告)号：US20150125793A1

公开(公告)日：2015-05-07

申请号：US14528290

申请日：2014-10-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Koji TAKAYANAGI ,  Toshinobu FURUSHO ,  Takashi SASA ,  Daisuke ISHIMARU

IPC: G03F7/16

CPC classification number: G03F7/16 ,  H01L21/67017

Abstract: A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. The amount of the processing liquid returned to the processing liquid source side in the returning step is larger than the amount of the processing liquid ejected from the ejecting part in the ejecting step.

Abstract translation: 处理液体供给装置执行喷射步骤，其中抽吸到泵中的处理液体通过过滤装置并从排出部件喷出而不将处理液体返回到泵中; 其中抽吸到泵中的处理液体返回到混合部分的处理液体源侧的返回步骤; 以及补充步骤，其中返回到处理液体源侧的处理液体与从处理液体源补充的处理液体一起被抽吸到泵中。 处理液体在返回步骤和补充步骤中的至少一个中通过过滤装置。 在返回步骤中返回到处理液体源侧的处理液的量大于在喷射步骤中从喷射部喷出的处理液的量。

公开(公告)号：US20140299161A1

公开(公告)日：2014-10-09

申请号：US14246714

申请日：2014-04-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keiichi TANAKA ,  Kousuke YOSHIHARA ,  Tomohiro ISEKI

IPC: H01L21/02

CPC classification number: H01L21/67051 ,  B08B3/024 ,  B08B5/00 ,  G03F7/3021 ,  H01L21/67028 ,  H01L21/67034

Abstract: There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force.

Abstract translation: 提供了一种基板处理方法，其包括：将显影液供给到暴露的基板的表面以形成抗蚀剂图案; 向所述基板的表面供给清洗液以从所述基板除去在所述显影步骤中产生的残留物; 将更换液体供给到基板的表面以用替换液体代替存在于基板上的清洗液体，替代液体具有50mN / m以下的表面张力，并含有用于限制更换液体渗滤的渗滤抑制剂 形成抗蚀图案的抗蚀剂壁部分; 并且通过在旋转基板的同时向衬底的中心部分供应气体来形成干燥区域，以便通过以离心力将干燥区域扩展到基板的周缘部分来干燥基板的表面。

公开(公告)号：US20140038423A1

公开(公告)日：2014-02-06

申请号：US13952739

申请日：2013-07-29

Applicant: Tokyo Electron Limited

Inventor： Fumiko IWAO ,  Satoru SHIMURA ,  Kousuke YOSHIHARA

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  H01L21/02087 ,  H01L21/0337 ,  H01L21/67051 ,  H01L21/6708

Abstract: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.

Abstract translation: 在本发明中，将掩模溶液供给到在垂直轴上旋转的基板的前表面的边缘部分，以在基板的边缘部分形成掩模膜，将硬掩模溶液供给到 在基板的正面上形成硬掩模膜的基板，将硬膜掩模膜溶解的硬掩模膜去除溶液供给到形成在基板的边缘部分的硬掩模膜，以除去形成在该基板上的硬掩模膜 将基板的边缘部分和溶解掩模膜的掩模膜去除溶液供应到掩模膜以去除基板边缘部分处的掩模膜。

公开(公告)号：US20180350594A1

公开(公告)日：2018-12-06

申请号：US16055975

申请日：2018-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Takafumi NIWA

IPC: H01L21/02 ,  H01L21/67 ,  B05C13/00 ,  G03F7/16 ,  B05C9/12 ,  H01L21/687 ,  B05C11/08

Abstract: A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and spreading the coating solution by a centrifugal force by rotating the substrate at a first rotational speed, decreasing a speed of the substrate from the first rotational speed toward a second rotational speed and rotating the substrate at the second rotational speed to make a surface of a liquid film of the coating solution even, supplying a gas to a surface of the substrate when the substrate is rotated at the second rotational speed to reduce fluidity of the coating solution, and drying the surface of the substrate by rotating the substrate at a third rotational speed faster than the second rotational speed.

公开(公告)号：US20170170040A1

公开(公告)日：2017-06-15

申请号：US15378595

申请日：2016-12-14

Applicant: Tokyo Electron Limited

Inventor： Kenichi SHIGETOMI ,  Takeshi SAIKUSA ,  Eiichi SEKIMOTO ,  Takayuki FUKUDOME ,  Kousuke YOSHIHARA ,  Suguru ENOKIDA ,  Kazuhiro TAKESHITA ,  Kazuto UMEKI

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67103 ,  H05B1/0233 ,  H05B2203/037

Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

公开(公告)号：US20170140929A1

公开(公告)日：2017-05-18

申请号：US15350150

申请日：2016-11-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Takafumi NIWA

IPC: H01L21/02 ,  B05C13/00 ,  B05C9/12 ,  H01L21/687 ,  B05C11/08

CPC classification number: H01L21/02282 ,  B05C9/12 ,  B05C11/08 ,  B05C13/00 ,  G03F7/162 ,  G03F7/168 ,  H01L21/67028 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/68764

Abstract: A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and spreading the coating solution by a centrifugal force by rotating the substrate at a first rotational speed, decreasing a speed of the substrate from the first rotational speed toward a second rotational speed and rotating the substrate at the second rotational speed to make a surface of a liquid film of the coating solution even, supplying a gas to a surface of the substrate when the substrate is rotated at the second rotational speed to reduce fluidity of the coating solution, and drying the surface of the substrate by rotating the substrate at a third rotational speed faster than the second rotational speed.

公开(公告)号：US20170045821A1

公开(公告)日：2017-02-16

申请号：US15338638

申请日：2016-10-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Hideharu KYOUDA ,  Koshi MUTA ,  Taro YAMAMOTO ,  Yasushi TAKIGUCHI

IPC: G03F7/30 ,  B05C5/02 ,  B05C11/08 ,  B05D1/00

CPC classification number: G03F7/30 ,  B05C5/02 ,  B05C5/0287 ,  B05C11/08 ,  B05D1/005 ,  B05D1/26 ,  G03F7/3021 ,  H01L21/6715

Abstract: A developing apparatus includes: a substrate holder that hold a substrate horizontally; a developer nozzle that supplies a developer onto the substrate to form a liquid puddle; a turning flow generation mechanism including a rotary member that rotates about an axis perpendicular to the substrate while the rotary member is being in contact with the liquid puddle thereby to generate a turning flow in the liquid puddle of the developer formed on the substrate; and a moving mechanism for moving the turning flow generation mechanism along a surface of the substrate. The line-width uniformity of a pattern can be improved by forming turning flows in a desired region of the substrate and stirring the developer.

Abstract translation: 显影装置包括：水平保持基板的基板支架; 显影剂喷嘴，其将显影剂供应到所述基板上以形成液体熔池; 旋转流产生机构，其包括旋转构件，所述旋转构件在所述旋转构件与所述液体熔池接触的同时围绕垂直于所述基板的轴旋转，从而在形成在所述基板上的所述显影剂的液体池中产生转向流; 以及用于沿着基板的表面移动转向流产生机构的移动机构。 可以通过在衬底的期望区域中形成转向流并搅拌显影剂来改善图案的线宽均匀性。

公开(公告)号：US20160161867A1

公开(公告)日：2016-06-09

申请号：US15040362

申请日：2016-02-10

Applicant: Tokyo Electron Limited

Inventor： Yuichi YOSHIDA ,  Kousuke YOSHIHARA

IPC: G03F7/20

CPC classification number: G03F7/70975 ,  G03F7/162 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/02052 ,  H01L21/02104 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6715

Abstract: A liquid treatment method includes: supplying a first organic solvent to a substrate with the substrate being held horizontally by a substrate holder; and thereafter supplying a second organic solvent to a substrate held by the substrate holder, the second solvent having a higher cleanliness than the first solvent.

公开(公告)号：US20150279702A1

公开(公告)日：2015-10-01

申请号：US14736582

申请日：2015-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshinobu FURUSHO ,  Takahiro OOKUBO ,  Kousuke YOSHIHARA ,  Yusuke YAMAMOTO ,  Steffen HORNIG

IPC: H01L21/67 ,  B01D35/02 ,  B05C11/10 ,  B01D29/56

CPC classification number: B05D1/02 ,  B01D29/56 ,  B01D35/02 ,  B05C9/06 ,  B05C11/10 ,  F17D1/00 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67178 ,  Y10T137/794

Abstract: A chemical supply system comprises: a first container and a second container for storing a chemical solution; a first pump, located on a first pipe connecting the first and second containers, for directing the solution stored in the first container to the second container; and a first filter, located in the first pipe, for filtering the solution flowing through the first pipe from the first container toward the second container. The system further includes: a second pipe for connecting the first container and the second container; and a second pump, located on the second pipe, for directing the solution stored in the second container to the first container.

Abstract translation: 化学品供应系统包括：第一容器和用于储存化学溶液的第二容器; 第一泵，位于连接第一和第二容器的第一管上，用于将存储在第一容器中的溶液引导到第二容器; 以及位于第一管道中的第一过滤器，用于将从第一容器流过第一管道的溶液过滤到第二容器。 该系统还包括：用于连接第一容器和第二容器的第二管; 以及位于第二管上的用于将存储在第二容器中的溶液引导到第一容器的第二泵。