公开(公告)号：US4876219A

公开(公告)日：1989-10-24

申请号：US318638

申请日：1989-03-03

申请人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Takuya Watanabe

发明人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Takuya Watanabe

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02658 ,  Y10S148/025 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/154 ,  Y10S148/169 ,  Y10S438/933

摘要： A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor (e.g., GaAs) on the silicon substrate, and growing a first epitaxial layer of the compound semiconductor on the amorphous layer, characterized in that the method comprises the steps of: after the epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on the first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on the second amorphous layer. The obtained GaAs/Si substrate has a reduced dislocation density.

公开(公告)号：US08477072B2

公开(公告)日：2013-07-02

申请号：US13414794

申请日：2012-03-08

申请人： Yuji Furumura

发明人： Yuji Furumura

IPC分类号： H01Q1/38

CPC分类号： H01Q9/27 ,  G06K19/072 ,  G06K19/07749 ,  G07D7/01 ,  H01Q1/2208 ,  H01Q9/16

摘要： The present disclosure generally describes radio frequency (RF) particles and an RF powder-containing base including a plurality of such RF particles. The RF particles may include an antenna element and an integrated circuit element coupled together by at least one interconnection. The base may be formed from sheet-like subjects, such as various kinds of cards, bills, and documents. Methods of forming the RF powder-containing base are also generally disclosed.

摘要翻译： 本公开通常描述射频（RF）颗粒和包含多个这样的RF颗粒的含RF粉末的基底。 RF颗粒可以包括通过至少一个互连而耦合在一起的天线元件和集成电路元件。 基部可以由片状物体形成，例如各种卡，票据和文件。 通常还公开了形成含有RF粉末的基底的方法。

公开(公告)号：US08154456B2

公开(公告)日：2012-04-10

申请号：US12153662

申请日：2008-05-22

申请人： Yuji Furumura

发明人： Yuji Furumura

IPC分类号： H01Q1/38

CPC分类号： H01Q9/27 ,  G06K19/072 ,  G06K19/07749 ,  G07D7/01 ,  H01Q1/2208 ,  H01Q9/16

摘要： The present invention provides an RF powder-containing base including functional components, wherein forged cards, documents, bills, or the like are hard to be produced with respect to sheet-like subjects with high proprietary nature, such as various kinds of cards, bills, and securities, and each of a large number of particles can memorize information such as an identification number or the like. An RF powder-containing base 10 contains an RF powder (particles 11, 12, and 13), in which each particle of the RF powder provides an integrated circuit 15 formed on a substrate 14, an insulating layer 16 formed on the integrated circuit, and an antenna element 17 formed on the insulating layer, wherein each of the particles of the RF powder contained in the base has sensitivity to an electromagnetic waves having any of a plurality of different frequencies.

摘要翻译： 本发明提供了一种包含功能部件的含RF粉末的基体，其中相对于具有高专利性的片状物体，如各种卡片，纸币，纸币，纸币等都难以制造伪造的卡片，文件，纸币等 和证券，并且大量的粒子中的每一个可以记忆诸如识别号码等的信息。 含RF粉末的基体10包含RF粉末（颗粒11,12和13），其中RF粉末的每个颗粒提供形成在基板14上的集成电路15，形成在集成电路上的绝缘层16， 以及形成在所述绝缘层上的天线元件17，其中包含在所述基座中的所述RF粉末的每个颗粒对具有多个不同频率中的任何一个的电磁波具有敏感性。

公开(公告)号：US5233163A

公开(公告)日：1993-08-03

申请号：US725081

申请日：1991-07-03

申请人： Fumitake Mieno ,  Yuji Furumura ,  Atsuhiro Tsukune ,  Hiroshi Miyata

发明人： Fumitake Mieno ,  Yuji Furumura ,  Atsuhiro Tsukune ,  Hiroshi Miyata

IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B29/06 ,  H01L21/00 ,  H01L21/324

CPC分类号： H01L21/67103

摘要： A heating apparatus for use in heating a substrate comprises an electric heater and a power supply part. The electric heater is made up of an approximately columnar body which is made of graphite, and this columnar body has a top with a flat surface part on which the substrate is placed and a pair of legs which extend downwardly from the flat surface part. The legs are defined by an opening in the columnar body. The power supplying part is coupled to the electric heater and supplies a voltage across the legs of the columnar body so that a current flows from one leg to the other, thereby generating heat at the flat surface part to heat the substrate.

摘要翻译： 用于加热基板的加热装置包括电加热器和电源部分。 电加热器由石墨制成的近似柱状的主体构成，并且该柱状体具有顶部，其具有放置基板的平坦表面部分和从平坦表面部分向下延伸的一对支腿。 腿由柱状体中的开口限定。 供电部分耦合到电加热器并且提供横跨柱状体的腿的电压，使得电流从一个腿流向另一个腿，由此在平坦表面部分处产生热量以加热衬底。

公开(公告)号：US5231057A

公开(公告)日：1993-07-27

申请号：US748955

申请日：1991-08-20

申请人： Masahiko Doki ,  Junya Nakahira ,  Yuji Furumura

发明人： Masahiko Doki ,  Junya Nakahira ,  Yuji Furumura

IPC分类号： H01L21/768 ,  C23C16/40 ,  C23C16/515 ,  H01L21/316 ,  H01L23/522

CPC分类号： H01L21/02164 ,  C23C16/515 ,  H01L21/02129 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/31612

摘要： A method for producing a semiconductor device includes the steps of forming a patterned wiring line on a first insulating layer, and depositing a second insulating layer on the patterned wiring line and the first insulating layer by a plasma-assisted CVD process in which a pulse-modulated plasma is generated and a gas containing hydrogen is used.

公开(公告)号：US5111266A

公开(公告)日：1992-05-05

申请号：US714367

申请日：1991-06-12

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737

CPC分类号： H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  H01L29/7375

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

公开(公告)号：US5763005A

公开(公告)日：1998-06-09

申请号：US589470

申请日：1996-01-22

申请人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

发明人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

IPC分类号： H01L21/316 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  C23C16/00 ,  H01L21/223

CPC分类号： H01L23/291 ,  H01L21/3105 ,  H01L23/5329 ,  H01L2924/0002

摘要： For a multilayer insulating film of a semiconductor device, the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1.times.10.sup.20 atoms/cm.sup.3 or more.

摘要翻译： 对于半导体器件的多层绝缘膜，在绝缘膜的界面上碳或氟的分布量最大化。 界面处存在的碳的浓度为1×1020原子/ cm3以上。

公开(公告)号：US5518937A

公开(公告)日：1996-05-21

申请号：US407254

申请日：1995-03-20

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  H01L29/7375

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

摘要翻译： 双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上 大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。 第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。

公开(公告)号：US5506443A

公开(公告)日：1996-04-09

申请号：US327820

申请日：1994-10-17

申请人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

发明人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

IPC分类号： H01L21/316 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/291 ,  H01L21/3105 ,  H01L23/5329 ,  H01L2924/0002

摘要： A multilayer insulating film of a semiconductor device, where the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1.times.10.sup.20 atoms/cm.sup.3 or more.

摘要翻译： 半导体器件的多层绝缘膜，其中碳或氟的分布量在绝缘膜之间的界面处最大化。 界面处存在的碳的浓度为1×1020原子/ cm3以上。

公开(公告)号：US4509070A

公开(公告)日：1985-04-02

申请号：US218007

申请日：1980-12-18

申请人： Yuji Furumura

发明人： Yuji Furumura

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/08

CPC分类号： H01L27/088

摘要： A metal-insulator-semiconductor (MIS) device comprising a MIS transistor and a MIS input element which are fabricated apart from each other on a semiconductor substrate. The MIS transistor is provided with source and drain regions as well as a channel region between the source and drain regions, a gate insulating layer on the channel region and a gate on the insulating layer. The MIS input element is provided with an input region of the same conductive type as the channel region, an insulating layer on the input region and an electrode on the insulating layer. The electrode and insulating layer of the input element are made of the same material in the same thickness as the gate and insulating layer of the MIS transistor, and the gate of the MIS transistor is exclusively electrically interconnected to the electrode of the MIS input element.

摘要翻译： 一种金属绝缘体半导体（MIS）器件，包括在半导体衬底上彼此分开制造的MIS晶体管和MIS输入元件。 MIS晶体管设置有源极和漏极区以及源极和漏极区之间的沟道区，沟道区上的栅极绝缘层和绝缘层上的栅极。 MIS输入元件设置有与沟道区相同的导电类型的输入区域，输入区域上的绝缘层和绝缘层上的电极。 输入元件的电极和绝缘层由与MIS晶体管的栅极和绝缘层相同厚度的相同材料制成，并且MIS晶体管的栅极专门与MIS输入元件的电极电互连。