公开(公告)号：US5041311A

公开(公告)日：1991-08-20

申请号：US490887

申请日：1990-03-09

申请人： Atsuhiro Tsukune ,  Kenji Koyama

发明人： Atsuhiro Tsukune ,  Kenji Koyama

IPC分类号： C23C16/30 ,  C23C16/44 ,  C23C16/50 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： C23C16/4405 ,  C23C16/4404

摘要： A CVD method comprises the steps of making a plasma self-cleaning within a chamber using a gas which includes fluorine, coating an inside of the chamber by a first layer of a material which includes silicon and nitrogen, and forming a second layer on a predetermined surface within the chamber by a chemical vapor deposition. The second layer is made of a material which includes a quantity of nitrogen smaller than a quantity of nitrogen included in the first layer.

公开(公告)号：US06635523B1

公开(公告)日：2003-10-21

申请号：US09204277

申请日：1998-12-03

申请人： Yuji Uchiyama ,  Toshiya Suzuki ,  Atsuhiro Tsukune ,  Takae Sukegawa

发明人： Yuji Uchiyama ,  Toshiya Suzuki ,  Atsuhiro Tsukune ,  Takae Sukegawa

IPC分类号： H01L218242

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/7687 ,  H01L21/76889 ,  H01L28/60 ,  H01L28/91

摘要： The method of forming a capacitor of a semiconductor device comprises the steps of forming a semiconductor film connected to a semiconductor substrate, forming a capacitor lower electrode made of a tungsten film selectively on a surface of the semiconductor film by causing a tungsten compound gas to react with the semiconductor film, forming a tungsten nitride film by nitriding a surface of the tungsten film by using a nitrogen gas or a nitrogen containing gas, forming a capacitor dielectric film made of oxygen compound on the tungsten nitride film, annealing the capacitor dielectric film in an oxygen containing gas, and forming a capacitor upper electrode made of a conductive film on the capacitor dielectric film.

摘要翻译： 形成半导体器件的电容器的方法包括以下步骤：形成连接到半导体衬底的半导体膜，通过使钨化合物气体反应，在半导体膜的表面上选择性地形成由钨膜制成的电容器下电极 与半导体膜通过使用氮气或含氮气体氮化钨膜的表面而形成氮化钨膜，在氮化钨膜上形成由氧化合物制成的电容器电介质膜，使电容器电介质膜退火 含氧气体，并且在电容器电介质膜上形成由导电膜制成的电容器上电极。

公开(公告)号：US06344363B1

公开(公告)日：2002-02-05

申请号：US09143099

申请日：1998-08-28

申请人： Rika Shinohara ,  Atsuhiro Tsukune ,  Hiroshi Kudo

发明人： Rika Shinohara ,  Atsuhiro Tsukune ,  Hiroshi Kudo

IPC分类号： H01L2100

CPC分类号： H01L27/11502 ,  C23C16/401 ,  C23C16/402 ,  C23C16/511 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629 ,  H01L28/55

摘要： A ferroelectric film is formed on a principal surface of an underlying substrate. By the vapor deposition using high density plasma, an insulating protection film is deposited so that the ferroelectric film is covered therewith. The deposited protection film can prevent the ferroelectric film from deteriorating.

摘要翻译： 在下层基板的主面上形成铁电体膜。 通过使用高密度等离子体的气相沉积，沉积绝缘保护膜，以便将铁电体膜覆盖。 沉积的保护膜可以防止铁电体膜劣化。

公开(公告)号：US4781945A

公开(公告)日：1988-11-01

申请号：US65505

申请日：1987-06-23

申请人： Masahide Nishimura ,  Kanetake Takasaki ,  Kenji Koyama ,  Atsuhiro Tsukune

发明人： Masahide Nishimura ,  Kanetake Takasaki ,  Kenji Koyama ,  Atsuhiro Tsukune

IPC分类号： C23C16/22 ,  C23C16/40 ,  H01L21/316 ,  C23C16/30

CPC分类号： H01L21/02129 ,  C23C16/22 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/31625

摘要： A coating of phosphosilicate glass is deposited on a substrate by a chemical vapor deposition method, using a reaction gas consisting of monosilane, phosphine, and oxygen, in admixture with ammonia gas. According to this deposition process, the undesirable formation and adhesion of particulate by-products such as SiO.sub.2, P.sub.2 O.sub.5, and H.sub.2 SiO.sub.3 to the substrate surface can be effectively prevented, and the step coverage can be improved.

公开(公告)号：US08836126B2

公开(公告)日：2014-09-16

申请号：US12535489

申请日：2009-08-04

申请人： Hirosato Ochimizu ,  Atsuhiro Tsukune ,  Hiroshi Kudo

发明人： Hirosato Ochimizu ,  Atsuhiro Tsukune ,  Hiroshi Kudo

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC分类号： H01L21/76807 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2224/05149 ,  H01L2224/05649 ,  H01L2224/29149 ,  H01L2224/29649 ,  H01L2224/80449 ,  H01L2224/81449 ,  H01L2224/83449 ,  H01L2224/84449 ,  H01L2224/85449 ,  H01L2924/0002 ,  H01L2924/01025 ,  H01L2924/00

摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

摘要翻译： 半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线， 所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。

公开(公告)号：US20100038792A1

公开(公告)日：2010-02-18

申请号：US12535489

申请日：2009-08-04

申请人： Hirosato OCHIMIZU ,  Atsuhiro Tsukune ,  Hiroshi Kudo

发明人： Hirosato OCHIMIZU ,  Atsuhiro Tsukune ,  Hiroshi Kudo

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/76807 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2224/05149 ,  H01L2224/05649 ,  H01L2224/29149 ,  H01L2224/29649 ,  H01L2224/80449 ,  H01L2224/81449 ,  H01L2224/83449 ,  H01L2224/84449 ,  H01L2224/85449 ,  H01L2924/0002 ,  H01L2924/01025 ,  H01L2924/00

摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

摘要翻译： 半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线， 所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。

公开(公告)号：US5609721A

公开(公告)日：1997-03-11

申请号：US367828

申请日：1995-01-03

申请人： Atsuhiro Tsukune ,  Kiyokatsu Suzuki ,  Katsuyoshi Matsuura ,  Fumitake Mieno ,  Hirokazu Yamanishi

发明人： Atsuhiro Tsukune ,  Kiyokatsu Suzuki ,  Katsuyoshi Matsuura ,  Fumitake Mieno ,  Hirokazu Yamanishi

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67028 ,  Y10S438/905

摘要： An apparatus and method for manufacturing a semiconductor device includes a reaction chamber adapted to exhaust gas therefrom, and a cleaning gas supplying system for introducing cleaning gas containing ClF.sub.3 into the reaction chamber, the system having a plurality of gas blowout holes formed in the flow direction of gas at least in the reaction chamber. The reaction chamber may be a tubular chamber, and the cleaning gas supplying system may be a tube extending from one end to the other end of the reaction chamber along the inner wall or the central axis of the reaction chamber, a plurality of through holes being formed in the side wall of the tube. Damages to the inner surface of the reaction chamber of the semiconductor device manufacturing apparatus can be suppressed and a film attached to the inner wall of the reaction chamber can be removed in a short time.

摘要翻译： 一种用于制造半导体器件的设备和方法，包括适于从其中排出的反应室和用于将含有ClF 3的清洁气体引入反应室的清洁气体供给系统，该系统具有沿流动方向形成的多个气体吹出孔 至少在反应室中。 反应室可以是管状室，并且清洁气体供应系统可以是沿着反应室的内壁或中心轴线从反应室的一端延伸到另一端的管，多个通孔是 形成在管的侧壁中。 能够抑制对半导体装置制造装置的反应室内表面的损伤，能够在短时间内除去附着于反应室内壁的膜。

公开(公告)号：US5233163A

公开(公告)日：1993-08-03

申请号：US725081

申请日：1991-07-03

申请人： Fumitake Mieno ,  Yuji Furumura ,  Atsuhiro Tsukune ,  Hiroshi Miyata

发明人： Fumitake Mieno ,  Yuji Furumura ,  Atsuhiro Tsukune ,  Hiroshi Miyata

IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B29/06 ,  H01L21/00 ,  H01L21/324

CPC分类号： H01L21/67103

摘要： A heating apparatus for use in heating a substrate comprises an electric heater and a power supply part. The electric heater is made up of an approximately columnar body which is made of graphite, and this columnar body has a top with a flat surface part on which the substrate is placed and a pair of legs which extend downwardly from the flat surface part. The legs are defined by an opening in the columnar body. The power supplying part is coupled to the electric heater and supplies a voltage across the legs of the columnar body so that a current flows from one leg to the other, thereby generating heat at the flat surface part to heat the substrate.

摘要翻译： 用于加热基板的加热装置包括电加热器和电源部分。 电加热器由石墨制成的近似柱状的主体构成，并且该柱状体具有顶部，其具有放置基板的平坦表面部分和从平坦表面部分向下延伸的一对支腿。 腿由柱状体中的开口限定。 供电部分耦合到电加热器并且提供横跨柱状体的腿的电压，使得电流从一个腿流向另一个腿，由此在平坦表面部分处产生热量以加热衬底。

公开(公告)号：US4804560A

公开(公告)日：1989-02-14

申请号：US026900

申请日：1987-03-17

申请人： Yoshimi Shioya ,  Yasushi Oyama ,  Norihisa Tsuzuki ,  Mamoru Maeda ,  Masaaki Ichikawa ,  Fumitake Mieno ,  Shin-ichi Inoue ,  Yasuo Uo-ochi ,  Akira Tabuchi ,  Atsuhiro Tsukune ,  Takuya Watanabe ,  Takayuki Ohba

发明人： Yoshimi Shioya ,  Yasushi Oyama ,  Norihisa Tsuzuki ,  Mamoru Maeda ,  Masaaki Ichikawa ,  Fumitake Mieno ,  Shin-ichi Inoue ,  Yasuo Uo-ochi ,  Akira Tabuchi ,  Atsuhiro Tsukune ,  Takuya Watanabe ,  Takayuki Ohba

IPC分类号： H01L21/205 ,  C23C16/04 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  B05D5/12 ,  C23C16/00

CPC分类号： H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

摘要： A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface. Aluminum film is deposited on the flat surface and patterned by lithography. The flat aluminum deposition allows fabrication of accurate and reliable wirings and facilitates production of VLSI of sub-micron order.

摘要翻译： 一种在硅半导体衬底上选择性地沉积钨的方法。 硅衬底涂覆有被图案化以提供用于形成电极或布线的开口的PSG或SiO 2的掩模膜。 在开口中的基板的一部分上，通过CVD法从含有WF6和H2的气体混合物的大气层沉积厚度约为2000的钨层。 在该处理中，钨核沉积在掩模膜的表面上也是如此。 在这种核形成膜之前，中断沉积处理，并且将H 2气体进料到CVD装置中以产生HF，其蚀刻掩模膜的表面，因此除去钨原子。 沉积和去除步骤重复几次，直到沉积的钨的高度和掩模膜的厚度基本上等于呈现平坦表面。 铝膜沉积在平坦表面上并通过光刻图案化。 扁平铝沉积允许制造准确可靠的布线，并有助于生产亚微米级VLSI。