利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.023 秒)

    Method of making a mask ROM using tunnel current detection to store data
    21.
    发明授权
    Method of making a mask ROM using tunnel current detection to store data 失效
    使用隧道电流检测来制作掩模ROM以存储数据的方法

    公开(公告)号：US5580809A

    公开(公告)日：1996-12-03

    申请号：US492217

    申请日：1995-06-19

    申请人： Shinichi Mori ,  Osamu Ueda ,  Masayuki Yamashita

    发明人： Shinichi Mori ,  Osamu Ueda ,  Masayuki Yamashita

    IPC分类号： G11C11/56 ,  H01L21/8246 ,  H01L27/112

    CPC分类号： G11C11/5692 ,  H01L27/112 ,  Y10S257/926 ,  Y10S438/981

    摘要： Each of the portions corresponding to the crossings of a plurality of first strip conductive layers serving as bit lines and a plurality of second strip conductive layers serving as word lines crossing the conductive layers at right angles is used as one memory cell. An oxide film is provided between the first strip conductive layers and the second strip conductive layers. The thickness of this oxide film is set in each memory cell according to stored data. Also a multi-value memory can be realized, since the amount of stored data in each memory cell is an arbitrary amount of 1 bit or more by making the stored data of a plurality of types of memory cells having different thicknesses in the tunnel oxide film 15 correspond to a plurality of different data. The size of each memory cell can be reduced since the occupying area of each memory cell on the semiconductor substrate is dependent on the width of the first strip conductive layer and the second strip conductive layer. An insulation film in which tunnel phenomenon is generated can be formed using conventional manufacturing technology.

    摘要翻译： 作为用作位线的多个第一带状导电层和作为与导电层成直角交叉的字线的多个第二带状导电层的交叉部分的每个部分被用作一个存储单元。 在第一带状导电层和第二带状导电层之间设置氧化膜。 根据存储的数据，将该氧化膜的厚度设定在各存储单元中。 另外，可以实现多值存储器，因为通过在隧道氧化膜中存储具有不同厚度的多种类型的存储单元的存储数据，每个存储单元中存储的数据量是1位或更多的任意量 15对应于多个不同的数据。 由于半导体衬底上的每个存储单元的占有面积取决于第一带状导电层和第二带状导电层的宽度，因此可以减小每个存储单元的尺寸。 可以使用传统的制造技术形成其中产生隧道现象的绝缘膜。

    Semiconductor memory device including redundant memory cell array for repairing defect
    22.
    发明授权
    Semiconductor memory device including redundant memory cell array for repairing defect 失效
    半导体存储器件包括用于修复缺陷的冗余存储单元阵列

    公开(公告)号：US5416740A

    公开(公告)日：1995-05-16

    申请号：US987757

    申请日：1992-12-09

    申请人： Koreaki Fujita ,  Masayuki Yamashita ,  Masamitsu Shimasaki

    发明人： Koreaki Fujita ,  Masayuki Yamashita ,  Masamitsu Shimasaki

    IPC分类号： G11C11/413 ,  G11C11/401 ,  G11C29/00 ,  G11C29/04 ,  G11C29/44 ,  G11C7/00

    CPC分类号： G11C29/808 ,  G11C29/44

    摘要： An SRAM disclosed herein includes 64 memory cell array blocks and a redundant memory cell array block. The redundant memory cell array includes a total of 16 redundant memory cell columns. A defect address indicating a location of a defective memory column is programmed in an address programming circuit, and the specific defecting column in the defect address is programmed in an I/O programming circuit. Although each memory cell does not include a spare memory cell column or row for redundancy, the defect can be repaired by using a redundant memory cell array, so that the high integration of the SRAM can be accomplished.

    摘要翻译： 本文公开的SRAM包括64个存储单元阵列块和冗余存储单元阵列块。 冗余存储单元阵列包括总共16个冗余存储单元列。 指示缺陷存储器列的位置的缺陷地址被编程在地址编程电路中，缺陷地址中的特定缺陷列被编程在I / O编程电路中。 虽然每个存储器单元不包括用于冗余的备用存储单元列或行，但是可以通过使用冗余存储单元阵列来修复缺陷，使得可以实现SRAM的高集成度。

    Semiconductor memory device capable of correct reading of data under variable supply voltage
    23.
    发明授权
    Semiconductor memory device capable of correct reading of data under variable supply voltage 失效
    半导体存储器能够在可变电源电压下正确读取数据

    公开(公告)号：US5305275A

    公开(公告)日：1994-04-19

    申请号：US913315

    申请日：1992-07-15

    申请人： Masayuki Yamashita ,  Tatsuki Furusho ,  Yasuhiro Kouro

    发明人： Masayuki Yamashita ,  Tatsuki Furusho ,  Yasuhiro Kouro

    IPC分类号： G11C17/00 ,  G11C5/14 ,  G11C7/06 ,  G11C16/06 ,  G11C7/00

    CPC分类号： G11C7/067 ,  G11C5/14

    摘要： An improved flash EEPROM with a sense amplifier having a sensing characteristics suitable for sensing a data signal under an externally applied supply voltage Vcc in a lower range, and a sense amplifier having a sensing characteristics suitable for sensing a data signal under the supply voltage Vcc in a higher range. A Vcc level detecting device detects in which range the supply voltage Vcc is in, soasto selectively enable one of sense amplifiers. Since the data signal is amplified using the sense amplifier having the optimum sensing characteristics in accordance with the level of the supply voltage, the stored data can be accurately read.

    摘要翻译： 一种具有读出放大器的改进的快闪EEPROM，其具有适于在较低范围内在外部施加的电源电压Vcc下感测数据信号的感测特性，以及具有适于在电源电压Vcc下感测数据信号的感测特性的读出放大器 更高的范围。 Vcc电平检测装置检测电源电压Vcc在哪个范围内，选择性地启用读出放大器之一。 由于使用具有根据电源电压的电平具有最佳感测特性的读出放大器对数据信号进行放大，所以能够准确地读出所存储的数据。

    A/D converter
    24.
    发明授权
    A/D converter 失效
    A / D转换器

    公开(公告)号：US4833474A

    公开(公告)日：1989-05-23

    申请号：US88418

    申请日：1987-08-24

    申请人： Kenji Nagai ,  Masayuki Yamashita ,  Masafumi Kanagawa ,  Mitsumasa Sato ,  Tsuneo Ito

    发明人： Kenji Nagai ,  Masayuki Yamashita ,  Masafumi Kanagawa ,  Mitsumasa Sato ,  Tsuneo Ito

    IPC分类号： H03M3/04

    CPC分类号： H03M3/324 ,  H03M3/458

    摘要： An A/D converter apparatus comprises: a sampling signal generating means to generate an oversampling signal and an internal sampling signal; a converter means to convert an input analog signal into a digital signal in synchronism with the oversampling signal; and a decimator means to perform a specified decimation on the digital signal in synchronism with the internal sampling signal; whereby the sampling signal generating means maintains the frequencies of the oversampling signal and the internal sampling signal in a specified relationship.

    摘要翻译： A / D转换装置包括：采样信号发生装置，用于产生过采样信号和内部采样信号; 转换器装置，用于将输入模拟信号转换成与过采样信号同步的数字信号; 以及抽取器装置，用于与内部采样信号同步地对数字信号执行指定的抽取; 由此采样信号发生装置以特定的关系维持过采样信号和内部采样信号的频率。

    Process for distilling water
    25.
    发明授权
    Process for distilling water 失效
    蒸馏水的方法

    公开(公告)号：US4421606A

    公开(公告)日：1983-12-20

    申请号：US315236

    申请日：1981-10-26

    申请人： Kenji Tsumura ,  Masayuki Yamashita

    发明人： Kenji Tsumura ,  Masayuki Yamashita

    IPC分类号： B01D1/26 ,  C02F1/08 ,  C02F1/14 ,  B01D3/02

    CPC分类号： B01D1/26 ,  C02F1/08 ,  C02F1/14 ,  Y02W10/37 ,  Y10S159/906 ,  Y10S203/01

    摘要： A process and an apparatus for distilling water in which a heat receiving plate member and a plurality of cooling plate members have a means for holding water to be treated on each reverse side thereof and are arranged in parallel spaced relationship with each other, and the water vapor produced by heating the heat receiving surface of the heat receiving plate member is condensed on the condensing surface of the adjacent cooling plate member, while giving the latent heat of the condensation to the cooling plate member and heating a water held on its back to produce the water vapor which is condensed on the condensing surface of the next cooling plate member, such evaporation by the latent heat and condensation being conducted according the number of rooms partitioned by adjacent two cooling plate members. There are apparatuses of two types, i.e. thermal diffusion type and convection type, and they are availably employed for purifying impure water or desalting sea water in high heat efficiency by utilizing various heat sources such as solar heat.

    摘要翻译： 一种用于蒸馏水的方法和装置，其中热接收板构件和多个冷却板构件具有用于在其每个反向侧上保持被处理水的装置并且彼此平行间隔地布置，并且水 通过加热受热板构件的受热面产生的蒸气在相邻的冷却板构件的冷凝表面上冷凝，同时向冷却板构件施加冷凝潜热并加热其背面保持的水以产生 在下一个冷却板构件的冷凝表面上冷凝的水蒸汽，这种通过潜热和冷凝的蒸发根据由相邻的两个冷却板构件隔开的房间数进行。 存在两种类型的装置，即热扩散型和对流型，并且它们可用于通过利用诸如太阳热的各种热源来净化不纯水或以高热效率脱盐海水。

    Exhaust cleaning-up device for internal combustion engine for vehicle
    27.
    发明授权
    Exhaust cleaning-up device for internal combustion engine for vehicle 有权
    用于车辆内燃机的排气净化装置

    公开(公告)号：US07614216B2

    公开(公告)日：2009-11-10

    申请号：US11629500

    申请日：2005-06-17

    申请人： Masayuki Yamashita ,  Katsuhiko Miyamoto ,  Seiji Shiota

    发明人： Masayuki Yamashita ,  Katsuhiko Miyamoto ,  Seiji Shiota

    IPC分类号： F01N3/00

    CPC分类号： F02D41/027 ,  F01N3/0835 ,  F01N3/101 ,  F01N13/009 ,  F02D17/02 ,  F02D41/0087 ,  F02D41/12 ,  Y02A50/2324 ,  Y02T10/22

    摘要： In an exhaust system, there are provided an HC absorbent which absorbs HC contained in exhaust when in a specified low-temperature range and desorbs the absorbed HC when it exceeds said low-temperature range, and a catalyst capable of at least removing HC by oxidation, where the catalyst is arranged at the same position as or downstream of the HC absorbent. When it is found that the HC absorbent is in a state ready for desorbing the absorbed HC (S16, S18) and the internal combustion engine is in a specified decelerating state (S14), fuel supply to some of the cylinders of an internal combustion engine is stopped while fuel is supplied to the other cylinders (partial fuel cut) (S22).

    摘要翻译： 在排气系统中，提供了一种HC吸收剂，其在特定的低温范围内吸收排气中的HC，并且当其超过所述低温范围时吸收的HC解吸，以及能够至少通过氧化除去HC的催化剂 其中催化剂被布置在HC吸收剂的相同位置或下游。 当发现HC吸收剂处于准备解吸所吸收的HC（S16，S18）并且内燃机处于规定的减速状态的状态（S14）时，向内燃机的一些气缸供给燃料 在向其他气缸供给燃料时停止（部分燃料切断）（S22）。

    Semiconductor device improved in light shielding property and light shielding package
    29.
    发明授权
    Semiconductor device improved in light shielding property and light shielding package 失效
    半导体器件改善了遮光性能和遮光封装

    公开(公告)号：US5317195A

    公开(公告)日：1994-05-31

    申请号：US792872

    申请日：1991-11-19

    申请人： Masahiko Ishikawa ,  Kohji Hayano ,  Shinichi Mori ,  Masayuki Yamashita ,  Osamu Ueda ,  Namiki Moriga

    发明人： Masahiko Ishikawa ,  Kohji Hayano ,  Shinichi Mori ,  Masayuki Yamashita ,  Osamu Ueda ,  Namiki Moriga

    IPC分类号： H01L23/06 ,  H01L23/29 ,  H01L23/31 ,  H01L23/552 ,  H01L23/28

    CPC分类号： H01L23/552 ,  H01L2224/48247 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3025

    摘要： Provided is a semiconductor device comprising a semiconductor chip which is directly covered with a resin material having a light shielding property as well as a film which is provided on the resin material for shielding the semiconductor device against light. The film may be formed by a seal having a surface which is covered with a metal and a rear surface which is colored black, a layer of a metal or ceramics which is deposited in a vapor phase, or a coating of an insulating material whose refractive index is different from that of the resin material. In another aspect of the present invention, provided is a semiconductor device which is directly covered with a resin material mixed with a light absorbing material. In still another aspect of the present invention, provided is a semiconductor device comprising a semiconductor chip, having a surface covered with black polyimide, which is further covered with a resin material having a light shielding property. In a further aspect of the present invention, provided is a package for covering a semiconductor device which is mounted on a wiring board. According to such improvement, a light shielding property is improved particularly in relation to a thin semiconductor device whose thickness is only about 1 mm, and the semiconductor device is prevented from a malfunction caused by light.

    摘要翻译： 提供了一种半导体器件，其包括直接由具有遮光性的树脂材料覆盖的半导体芯片以及设置在用于屏蔽半导体器件的光的树脂材料上的膜。 膜可以由具有被金属覆盖的表面和着色为黑色的后表面，以蒸气相沉积的金属或陶瓷层的密封件或者折射率为绝缘材料的绝缘材料的涂层形成， 指数与树脂材料的指数不同。 在本发明的另一方面，提供一种直接用与吸光材料混合的树脂材料覆盖的半导体器件。 在本发明的另一方面，提供一种半导体器件，其包括具有被黑色聚酰亚胺覆盖的表面的半导体芯片，该半导体器件进一步被具有遮光性的树脂材料覆盖。 在本发明的另一方面，提供一种用于覆盖安装在布线板上的半导体器件的封装。 根据这样的改进，特别是相对于厚度仅为1mm的薄型半导体器件而言，防光性能得到改善，并且防止了由于光引起的故障的半导体器件。