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50 条记录 (耗时 0.02 秒)

    CMOS BOLOMETER
    21.
    发明申请
    CMOS BOLOMETER 有权

    公开(公告)号：US20140054740A1

    公开(公告)日：2014-02-27

    申请号：US13969828

    申请日：2013-08-19

    申请人： Robert Bosch GmbH

    发明人： Gary Yama ,  Ando Feyh ,  Ashwin Samarao ,  Fabian Purkl ,  Gary O'Brien

    IPC分类号： H01L31/02

    CPC分类号： H01L31/02019 ,  G01J5/023 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/20 ,  G01J2005/204 ,  H01L27/1446

    摘要： A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

    摘要翻译： 制造半导体器件的方法包括在互补金属氧化物半导体（CMOS）工艺期间在衬底上形成至少一个牺牲层。 在所述至少一个牺牲层的顶部上沉积吸收层。 吸收层下面的至少一个牺牲层的一部分被去除以形成一个间隙，吸收层的一部分悬挂在该间隙上。 牺牲层可以是CMOS工艺的氧化物，其中使用选择性氢氟酸蒸气干蚀刻释放工艺除去氧化物以形成间隙。 牺牲层也可以是聚合物层，其中除去聚合物层以使用O 2等离子体蚀刻工艺形成间隙。

    INFRARED SENSING ELEMENT AND INFRARED IMAGING DEVICE
    23.
    发明申请
    INFRARED SENSING ELEMENT AND INFRARED IMAGING DEVICE 有权
    红外传感元件和红外成像装置

    公开(公告)号：US20110267473A1

    公开(公告)日：2011-11-03

    申请号：US13095441

    申请日：2011-04-27

    申请人： Hidetoshi Kabasawa ,  Minoru Wakabayashi

    发明人： Hidetoshi Kabasawa ,  Minoru Wakabayashi

    IPC分类号： H04N5/33 ,  H01L29/66 ,  B82Y99/00

    CPC分类号： H01L37/025 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/046 ,  G01J5/34

    摘要： An infrared sensing element is provided and includes a substrate, a supporting electrical insulating layer formed on the substrate; a first electrode formed on the supporting electrical insulating layer, a pyroelectric layer formed on the first electrode, and a second electrode formed on the pyroelectric layer. The pyroelectric layer has a light receiving area of 1×102 to 1×104 μm2, has a thickness of 0.8 to 10 μm, and contains therein a compound expressed as Pb(ZrxTi1-x)O3, where 0.57

    摘要翻译： 提供一种红外感测元件，包括：基板，形成在基板上的支撑电绝缘层; 形成在支撑电绝缘层上的第一电极，形成在第一电极上的热电层和形成在热电层上的第二电极。 热电层的光接收面积为1×102〜1×104μm2，厚度为0.8〜10μm，其中含有表示为Pb（Zr x Ti 1-x）O 3的化合物，其中0.57

    INFRARED RAY DETECTION DEVICE, METHOD OF FABRICATING THE SAME AND INFRARED RAY CAMERA
    25.
    发明申请
    INFRARED RAY DETECTION DEVICE, METHOD OF FABRICATING THE SAME AND INFRARED RAY CAMERA 有权
    红外雷射检测装置，其制造方法和红外雷射摄像机

    公开(公告)号：US20070170361A1

    公开(公告)日：2007-07-26

    申请号：US11616660

    申请日：2006-12-27

    申请人： Hiroto Honda ,  Ikuo Fujiwara ,  Masahiro Kuwata ,  Kei Masunishi

    发明人： Hiroto Honda ,  Ikuo Fujiwara ,  Masahiro Kuwata ,  Kei Masunishi

    IPC分类号： G01J5/00

    CPC分类号： G01J5/10 ,  G01J5/02 ,  G01J5/023 ,  G01J5/0235 ,  G01J5/20 ,  G01J5/24 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An infrared ray detection device has a detection cell which has a thermoelectric converting part and an infrared ray absorption layer formed via a space on a semiconductor substrate, a first wiring part formed on the semiconductor substrate, and a supporting part, the detection cell being formed via the space on the semiconductor substrate and supports the detection cell. The supporting part includes a plurality of supporting legs which have a second wiring part electrically connecting the first wiring part to the detection cell and an insulating part covering a surrounding are of the second wiring part, and at least one connection part made of an insulating material connecting the plurality of supporting legs to each other.

    摘要翻译： 一种红外线检测装置具有检测单元，其具有通过半导体基板上的空间形成的热电转换部和红外线吸收层，形成在半导体基板上的第一布线部和支撑部，形成检测单元 通过半导体衬底上的空间并支持检测单元。 支撑部分包括多个支撑腿，其具有将第一布线部分与检测单元电连接的第二布线部分和覆盖第二布线部分的周围的绝缘部分，以及由绝缘材料制成的至少一个连接部 将多个支撑腿彼此连接。

    Thermal infrared detector provided with shield for high fill factor
    26.
    发明授权
    Thermal infrared detector provided with shield for high fill factor 有权
    热红外探测器提供了高填充因子的屏蔽

    公开(公告)号：US06448557B2

    公开(公告)日：2002-09-10

    申请号：US09771879

    申请日：2001-01-30

    申请人： Naoki Oda

    发明人： Naoki Oda

    IPC分类号： G01J520

    CPC分类号： G01J5/02 ,  G01J5/0215 ,  G01J5/0225 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  G01J2005/0077

    摘要： An infrared photosensitive area is constituted by an infrared ray absorbing part that is heated by infrared rays, a thermal detector that detects the temperature change of the infrared ray absorbing part, and electrodes that are electrically connected to the thermal detector. The infrared photosensitive area is held up above one surface of a substrate by supports. The electrodes of the infrared photosensitive area are electrically connected to contact pads on the substrate by wiring material that constitutes the support. A shield projects from portions of the infrared ray absorbing part other than portions that correspond to the electrodes. The contact pads of the substrate and the surfaces of the electrodes and the supports that are directed away from the substrate are covered by the shield with an interposed space. This configuration enables an increase in the fill factor of the picture elements of the thermal infrared detector and enables greater absorption of infrared light.

    摘要翻译： 红外线感光区域由红外线加热的红外线吸收部分，检测红外线吸收部分的温度变化的热检测器和与热检测器电连接的电极构成。 红外线感光区域通过支撑体保持在基板的一个表面上方。 红外光敏区域的电极通过构成支撑体的布线材料电连接到基板上的接触焊盘。 除了与电极对应的部分之外，护罩从红外线吸收部的一部分突出。 衬底的接触焊盘和指向远离衬底的电极和支撑体的表面被屏蔽物覆盖，具有插入的空间。 该配置使得能够增加热红外检测器的像素的填充因子，并且能够更大程度地吸收红外光。

    Thermal infrared detector provided with shield for high fill factor
    27.
    发明申请
    Thermal infrared detector provided with shield for high fill factor 有权
    热红外探测器提供了高填充因子的屏蔽

    公开(公告)号：US20010010360A1

    公开(公告)日：2001-08-02

    申请号：US09771879

    申请日：2001-01-30

    发明人： Naoki Oda

    IPC分类号： G01J005/02 ,  C23F001/00

    CPC分类号： G01J5/02 ,  G01J5/0215 ,  G01J5/0225 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  G01J2005/0077

    摘要： An infrared photosensitive area is constituted by an infrared ray absorbing part that is heated by infrared rays, a thermal detector that detects the temperature change of the infrared ray absorbing part, and electrodes that are electrically connected to the thermal detector. The infrared photosensitive area is held up above one surface of a substrate by supports. The electrodes of the infrared photosensitive area are electrically connected to contact pads on the substrate by wiring material that constitutes the support. A shield projects from portions of the infrared ray absorbing part other than portions that correspond to the electrodes. The contact pads of the substrate and the surfaces of the electrodes and the supports that are directed away from the substrate are covered by the shield with an interposed space. This configuration enables an increase in the fill factor of the picture elements of the thermal infrared detector and enables greater absorption of infrared light.

    摘要翻译： 红外线感光区域由红外线加热的红外线吸收部分，检测红外线吸收部分的温度变化的热检测器和与热检测器电连接的电极构成。 红外线感光区域通过支撑体保持在基板的一个表面上方。 红外光敏区域的电极通过构成支撑体的布线材料电连接到基板上的接触焊盘。 除了与电极对应的部分之外，护罩从红外线吸收部的一部分突出。 衬底的接触焊盘和指向远离衬底的电极和支撑体的表面被屏蔽物覆盖，具有插入的空间。 该配置使得能够增加热红外检测器的像素的填充因子，并且能够更大程度地吸收红外光。

    ELECTROMAGNETIC RADIATION MICRO DEVICE, WAFER ELEMENT AND METHOD FOR MANUFACTURING SUCH A MICRO DEVICE
    30.
    发明申请
    ELECTROMAGNETIC RADIATION MICRO DEVICE, WAFER ELEMENT AND METHOD FOR MANUFACTURING SUCH A MICRO DEVICE 有权
    电磁辐射微型器件，波形元件和制造这种微型器件的方法

    公开(公告)号：US20150048470A1

    公开(公告)日：2015-02-19

    申请号：US14384318

    申请日：2012-03-23

    申请人： Wolfgang Reinert

    发明人： Wolfgang Reinert

    IPC分类号： H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/02165 ,  G01J5/0215 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/045 ,  G01J5/046 ,  G01J5/0803 ,  G01J5/0806 ,  G01J5/0862 ,  G01J5/0875 ,  G01J5/20 ,  G02B1/115 ,  H01L31/18 ,  H01L2924/16235

    摘要： The invention refers to an electromagnetic radiation sensor micro device for detecting electromagnetic radiation, which device comprises a substrate and a cover at least in part consisting of an electromagnetic radiation transparent material, and comprising a reflection reducing coating and providing a hermetic sealed cavity and an electromagnetic radiation detecting unit arranged within the cavity. The reflection reducing coating is arranged in form of a multi-layer thin film stack, which comprises a first layer and a second layer arranged one upon the other. The first layer has a first refractive index and the second layer has a second refractive index different from the one of said first layer. First and second layer are of such layer thickness that for a certain wavelength there is destructive interference. The invention also refers to a wafer element as well as method for manufacturing such a device.

    摘要翻译： 本发明涉及一种用于检测电磁辐射的电磁辐射传感器微型装置，该装置包括至少部分由电磁辐射透明材料构成的基底和盖，并且包括反射降低涂层并提供气密密封腔和电磁辐射 放射线检测单元布置在腔内。 反射降低涂层以多层薄膜叠层的形式布置，其包括彼此排列的第一层和第二层。 第一层具有第一折射率，第二层具有与所述第一层不同的第二折射率。 第一层和第二层具有这样的层厚度，对于一定的波长具有破坏性干扰。 本发明还涉及一种晶片元件及其制造方法。