CATHODIC ARC DEPOSITION
    21.
    发明申请
    CATHODIC ARC DEPOSITION 有权
    阴极弧沉积

    公开(公告)号:US20150034478A1

    公开(公告)日:2015-02-05

    申请号:US14129395

    申请日:2012-06-28

    Abstract: The present invention provides a method for depositing a wear resistant coating on a cutting tool substrate. Cathodic arc deposition is performed using one or more plate-shaped targets and a high arc current of at least 200 A, preferably at least 400 A, whereby a high total ion current of at least 5 A is provided in front of the substrates. A comparatively low bias voltage may be used in order to avoid negative effects of ions impinging on the substrates with high kinetic energy. Thanks to the method of the invention it is possible to deposit thick wear resistant coatings on cutting tool substrates in order to improve cutting performance and tool life.

    Abstract translation: 本发明提供了一种在切削工具基板上沉积耐磨涂层的方法。 使用一个或多个板状靶和至少200,优选至少400的高电弧电流进行阴极电弧沉积,由此在衬底前面提供至少5A的高总离子电流。 可以使用相对较低的偏置电压,以避免离子以高动能撞击在衬底上的负面影响。 由于本发明的方法,可以在切削工具基底上沉积厚的耐磨涂层,以便提高切削性能和刀具寿命。

    SPUTTERING APPARATUS
    22.
    发明申请
    SPUTTERING APPARATUS 审中-公开
    溅射装置

    公开(公告)号:US20130277213A1

    公开(公告)日:2013-10-24

    申请号:US13922353

    申请日:2013-06-20

    Inventor: Yohsuke SHIBUYA

    Abstract: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

    Abstract translation: 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括:能够在目标表面上形成磁场的磁体单元; 能够驱动所述磁体单元以改变所述磁场图案的旋转系统; 以及电流计,被配置为当由磁体单元形成磁场时测量目标电流,并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置,并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁,从而可以仅对必需的部分执行清洁。

    MAGNETRON SPUTTERING DEVICE, METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD
    23.
    发明申请
    MAGNETRON SPUTTERING DEVICE, METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD 审中-公开
    磁控溅射装置,控制磁控溅射装置的方法和薄膜形成方法

    公开(公告)号:US20130213798A1

    公开(公告)日:2013-08-22

    申请号:US13878695

    申请日:2011-10-17

    Applicant: Tokuo Yoshida

    Inventor: Tokuo Yoshida

    Abstract: A magnetron sputtering device is provided with: a target part positioned in such a manner as to face a substrate held by a substrate holding part; a power source that supplies power to the target part; a magnet part that moves back and forth along the rear of the target part; a chamber having side walls that are electrically grounded; and a power source control part that controls the power source in such a manner that, while the magnet part is away from approach points, which are points respectively closest to the side walls, a prescribed voltage is applied to the target part by the power source, but the prescribed voltage is reduced when the magnet part reaches one of the approach points.

    Abstract translation: 磁控溅射装置设置有:以与被基板保持部保持的基板相对的方式设置的目标部分; 向目标部件供电的电源; 沿着目标部分的后部来回移动的磁体部分; 具有电接地的侧壁的室; 以及电源控制部,其以这样的方式控制所述电源,即当所述磁体部分远离接近所述接近点时,所述接近点是分别最靠近所述侧壁的点,通过所述电源将规定的电压施加到所述目标部分 但是当磁体部分到达接近点之一时,规定的电压降低。

    Physical vapor deposition apparatus

    公开(公告)号:US12077850B2

    公开(公告)日:2024-09-03

    申请号:US17395186

    申请日:2021-08-05

    CPC classification number: C23C14/54 C23C14/14 C23C14/35 H01J37/3476

    Abstract: A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

    APPARATUS AND METHOD FOR FILM FORMATION BY PHYSICAL SPUTTERING

    公开(公告)号:US20190003038A1

    公开(公告)日:2019-01-03

    申请号:US15539816

    申请日:2017-05-25

    Inventor: Siyang LIU

    Abstract: Disclosed is an apparatus for film formation by physical sputtering, which includes a vacuum chamber; a substrate platform arranged inside of the chamber, and provided thereon with a substrate to be formed with a film; a target material arranged inside of the chamber, and arranged opposite to the substrate; at least one square resistance meter, which is connected to the target material to real-timely measure an actual resistance value of the target material; an excitation source, which is used to bombard the target material for sputtering atoms of the target material; and a control system, which is connected to the square resistance meter. The apparatus for film formation by physical sputtering has a simple structure, can monitor the consumption of the target material in real time, effectively avoid damage of a backboard and abnormality of a product resulting from breakdown of the target material, and improve the quality of the product. Meantime, the use efficiency of the target material can be improved and thus the waste of the material, which would otherwise be caused by incomplete use of the target material, can be avoided.

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