Abstract:
The present invention provides a method for depositing a wear resistant coating on a cutting tool substrate. Cathodic arc deposition is performed using one or more plate-shaped targets and a high arc current of at least 200 A, preferably at least 400 A, whereby a high total ion current of at least 5 A is provided in front of the substrates. A comparatively low bias voltage may be used in order to avoid negative effects of ions impinging on the substrates with high kinetic energy. Thanks to the method of the invention it is possible to deposit thick wear resistant coatings on cutting tool substrates in order to improve cutting performance and tool life.
Abstract:
The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.
Abstract:
A magnetron sputtering device is provided with: a target part positioned in such a manner as to face a substrate held by a substrate holding part; a power source that supplies power to the target part; a magnet part that moves back and forth along the rear of the target part; a chamber having side walls that are electrically grounded; and a power source control part that controls the power source in such a manner that, while the magnet part is away from approach points, which are points respectively closest to the side walls, a prescribed voltage is applied to the target part by the power source, but the prescribed voltage is reduced when the magnet part reaches one of the approach points.
Abstract:
Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.
Abstract:
A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.
Abstract:
A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.
Abstract:
The present disclosure provides embodiments of a system and method for detecting processing chamber condition. The embodiments include performing a wafer-less processing step in a processing chamber to determine the condition of the chamber walls. Based on an analysis of the residual gas resulting from the wafer-less processing step, an operator or a process controller can determine whether the chamber walls have deteriorated to such an extent as to be cleaned.
Abstract:
Disclosed is an apparatus for film formation by physical sputtering, which includes a vacuum chamber; a substrate platform arranged inside of the chamber, and provided thereon with a substrate to be formed with a film; a target material arranged inside of the chamber, and arranged opposite to the substrate; at least one square resistance meter, which is connected to the target material to real-timely measure an actual resistance value of the target material; an excitation source, which is used to bombard the target material for sputtering atoms of the target material; and a control system, which is connected to the square resistance meter. The apparatus for film formation by physical sputtering has a simple structure, can monitor the consumption of the target material in real time, effectively avoid damage of a backboard and abnormality of a product resulting from breakdown of the target material, and improve the quality of the product. Meantime, the use efficiency of the target material can be improved and thus the waste of the material, which would otherwise be caused by incomplete use of the target material, can be avoided.
Abstract:
Some embodiments include systems to generate transient, elevated effective mass electron quasiparticles for transmuting radioactive fission products. Other embodiments of related systems and methods also are disclosed.
Abstract:
A method for affixing an RFID tag to sputtering targets is disclosed. A cavity is formed on the back of the backing plate adjacent to the outer edge. Within the cavity, an RFID tag is secured with an encapsulant. The encapsulant is cured with the RFID tag capable of communicating with an associated reader through the encapsulant.