公开(公告)号：US08502265B2

公开(公告)日：2013-08-06

申请号：US12561761

申请日：2009-09-17

申请人： Akira Tanaka

发明人： Akira Tanaka

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/08 ,  H01L33/305

摘要： A light emitting device includes: an active layer including a multi-quantum well having a well layer and a barrier layer, the active layer including a non-emitting region and an emitting region formed around the non-emitting region; a first cladding layer provided on a first major surface of the active layer; a pad electrode provided above the first cladding layer so that its center is located near a center of the non-emitting region as viewed in a direction perpendicular to the first major surface; and a second cladding layer provided below a second major surface of the active layer opposite to the first major surface. A bandgap of the well layer in the non-emitting region is wider than a bandgap of the well layer in the emitting region and narrower than a bandgap of the first cladding layer.

摘要翻译： 发光器件包括：有源层，包括具有阱层和阻挡层的多量子阱，所述有源层包括非发射区和形成在所述非发射区周围的发射区; 设置在所述有源层的第一主表面上的第一覆层; 焊接电极，其设置在所述第一包层上方，使得其中心位于与所述第一主表面垂直的方向上观察的所述非发光区域的中心附近; 以及第二包覆层，设置在与第一主表面相对的有源层的第二主表面的下方。 非发光区域中的阱层的带隙比发光区域中的阱层的带隙宽，并且比第一包层的带隙窄。

公开(公告)号：US20130092896A1

公开(公告)日：2013-04-18

申请号：US13507083

申请日：2012-06-04

申请人： Nikolay Ledentsov ,  James Lott ,  Vitaly Shchukin

发明人： Nikolay Ledentsov ,  James Lott ,  Vitaly Shchukin

IPC分类号： H01L33/04 ,  H01L33/26

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/26 ,  H01L33/305 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/3422 ,  Y10S977/762 ,  Y10S977/773

摘要： A light-emitting device epitaxially-grown on a GaAs substrate which contains an active region composed of AlxGa1-xAs alloy or of related superlattices of this materials system is disclosed. This active region either includes tensile-strained GaP-rich insertions aimed to increase the forbidden gap of the active region targeting the bright red, orange, yellow, or green spectral ranges, or is confined by regions with GaP-rich insertions aimed to increase the barrier height for electrons in the conduction band preventing the leakage of the nonequilibrium carriers outside of the light-generation region.

摘要翻译： 公开了一种在GaAs衬底上外延生长的发光器件，其包含由Al x Ga 1-x As合金构成的有源区或该材料体系的相关超晶格。 该活性区域还包括拉伸应变的富含GaP的插入物，旨在增加靶向明亮的红色，橙色，黄色或绿色光谱范围的活性区域的禁止间隙，或被GaP富集插入区限制，目的在于增加 导电带中的电子的势垒高度防止非平衡载流子在光产生区域外的泄漏。

公开(公告)号：US08367489B2

公开(公告)日：2013-02-05

申请号：US12951243

申请日：2010-11-22

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L29/66

CPC分类号： H01L29/78693 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02634 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/247 ,  H01L29/66666 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/7869 ,  H01L33/305

摘要： Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

摘要翻译： 目的是提供一种用于高功率应用的半导体器件，其中使用具有高生产率的新型半导体材料，并提供具有其中使用新型半导体材料的新颖结构的半导体器件。 本发明是一种垂直晶体管和一个垂直二极管，它们都具有堆叠具有结晶度的第一氧化物半导体膜和具有结晶性的第二氧化物半导体膜的氧化物半导体层叠体。 在晶体生长的步骤中除去用作氧化物半导体层叠体中的电子给体（供体）的杂质; 因此，氧化物半导体的堆叠体被高度纯化，并且是载流子密度低的本征半导体或本质上的半导体。 氧化物半导体的层叠体具有比硅半导体更宽的带隙。

公开(公告)号：US20120286287A1

公开(公告)日：2012-11-15

申请号：US13512269

申请日：2010-11-25

申请人： Jong Lam Lee

发明人： Jong Lam Lee

IPC分类号： H01L33/30 ,  H01L33/40

CPC分类号： H01L33/22 ,  H01L33/30 ,  H01L33/305 ,  H01L33/405 ,  H01L2933/0083

摘要： The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based πi-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based πi-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based πi-V group compound semiconductor layer on the p-type GaN-based πi-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening.

摘要翻译： 本公开提供了一种垂直GaN基半导体二极管及其制造方法。 GaN基和半导体组件半导体器件包括衬底，衬底上的p型欧姆电极层，p型欧姆电极层上的p型GaN基和pV族化合物半导体层，n 在p型GaN基和iV族化合物半导体层上的n型GaN基和iV族化合物半导体层以及n型GaN基IE-V族化合物半导体上的n型欧姆电极层 层。 p型欧姆电极层是具有70％以上的高反射率的Ag系高反射性电极，n型GaN系EV基化合物半导体层的表面经受以下工序中的至少一种： 形成光子晶体和表面粗糙化的过程。

公开(公告)号：US07812354B2

公开(公告)日：2010-10-12

申请号：US11567236

申请日：2006-12-06

申请人： David T. Emerson

发明人： David T. Emerson

IPC分类号： H01L29/22

CPC分类号： H01L33/305 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0075

摘要： A light emitting diode is disclosed that is formed in the Group III nitride material system. The diode includes respective n-type and p-type layers for current injection and light emission. At least one n-type Group III nitride layer in the diode has dopants selected from the group consisting of elements with a larger atomic radius than silicon and elements with a larger covalent radius than silicon, with germanium and tellurium being exemplary.

摘要翻译： 公开了在III族氮化物材料体系中形成的发光二极管。 二极管包括用于电流注入和发光的各自的n型和p型层。 二极管中的至少一个n型III族氮化物层具有选自具有比硅更大的原子半径的元素和具有比硅更大的共价半径的元素的掺杂剂，其中锗和碲是示例性的。

公开(公告)号：US07718450B2

公开(公告)日：2010-05-18

申请号：US11920043

申请日：2006-05-08

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/268 ,  H01L29/66462 ,  H01L33/305

摘要： There is provided a method for manufacturing a nitride semiconductor device which has a p-type nitride semiconductor layer having a high carrier concentration (low resistance) by activating an acceptor without raising a problem of forming nitrogen vacancies which are generated when a high temperature annealing is carried out over an extended time. A semiconductor lamination portion (6) made of nitride semiconductor is formed on a substrate (1) so as to form a light emitting layer, and irradiated by a laser beam having a wavelength λ of λ=h·c/E or less (E is energy capable of separating off the bonding between Mg and H) from the front surface side of the semiconductor lamination portion. Then, a heat treatment is carried out at a temperature of 300 to 400° C. And, similarly to a process for normal nitride semiconductor LED, a light transmitting conductive layer (7) is provided, an n-side electrode (9) is formed on an n-type layer (3) exposed by removing a part of the semiconductor lamination portion by etching, and a p-side electrode (8) is formed on a surface of the light transmitting conductive layer, thereby a LED is obtained.

摘要翻译： 提供了一种通过激活受主而具有具有高载流子浓度（低电阻）的p型氮化物半导体层的氮化物半导体器件的制造方法，而不会产生当高温退火时产生的形成氮空位的问题 进行了漫长的时间。 在基板（1）上形成由氮化物半导体构成的半导体层叠部（6），形成发光层，用波长λ为λ= h·c / E以下的激光（E 是能够分离Mg和H）之间的结合的能量与半导体层叠部分的前表面侧。 然后，在300〜400℃的温度下进行热处理。与普通氮化物半导体LED的工序相同，设置透光导电层（7），n侧电极（9）为 形成在通过蚀刻去除一部分半导体层叠部分而露出的n型层（3）上，并且在透光导电层的表面上形成p侧电极（8），由此获得LED。

公开(公告)号：US07514349B2

公开(公告)日：2009-04-07

申请号：US11505293

申请日：2006-08-17

申请人： Takashi Shiota ,  Tomonobu Tsuchiya

发明人： Takashi Shiota ,  Tomonobu Tsuchiya

IPC分类号： H01L21/28

CPC分类号： H01S5/305 ,  B82Y20/00 ,  H01L33/305 ,  H01S5/0265 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/34313

摘要： The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.

摘要翻译： 本发明的目的是为了减少作为p型掺杂剂的C被掺杂时的活性层附近的结晶劣化，并抑制作为p型掺杂剂的Zn的扩散为 未掺杂的有源层，从而实现清晰的掺杂分布。 当在C掺杂的InGaAlAs上侧引导层和未掺杂的有源层之间提供具有良好结晶度的Zn掺杂的InGaAlAs层时，可以降低结晶度降低的C掺杂InGaAlAs层的影响 活动层 此外，可以通过C掺杂的InGaAlAs层来抑制来自Zn掺杂的InP包层的Zn扩散。

公开(公告)号：US07456445B2

公开(公告)日：2008-11-25

申请号：US11597384

申请日：2005-05-20

申请人： Hitoshi Takeda ,  Syunji Horikawa

发明人： Hitoshi Takeda ,  Syunji Horikawa

IPC分类号： H01L29/20

CPC分类号： H01L33/325 ,  H01L33/305 ,  H01L33/32

摘要： A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer (4) having germanium (Ge) added thereto and having a resistivity of 1×10−1 to 1×10−3 Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.

摘要翻译： 一种III族氮化物半导体发光器件，其具有与由n型或p型III族氮化物半导体组成的晶体层结合的发光层（6），所述III族氮化物半导体发光器件的特征在于包括n 型（III）氮化物半导体层（4），其具有锗（Ge）并且具有1×10 -1至1×10 -3Ω电阻率的电阻率。 本发明提供了具有低电阻和优异的平坦度的Ge掺杂的n型III族氮化物半导体层，以便获得表现出低正向电压和优异的发光效率的III族氮化物半导体发光器件。

公开(公告)号：US20080227233A1

公开(公告)日：2008-09-18

申请号：US11837676

申请日：2007-08-13

申请人： Yoshihiko Hanamaki ,  Kenichi Ono

发明人： Yoshihiko Hanamaki ,  Kenichi Ono

IPC分类号： H01L21/00

CPC分类号： H01S5/0421 ,  H01L33/02 ,  H01L33/305 ,  H01S5/3054

摘要： A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer.

摘要翻译： 一种制造半导体光学器件的方法包括：形成掺杂有杂质的第一导电类型的BDR（带断续连续性降低）层;在形成BDR层之后，沉积与BDR层接触的第一导电类型的接触层， 接触层掺杂与BDR层相同的杂质并用于形成电极，以及在形成接触层之后进行热处理。

公开(公告)号：US20080121909A1

公开(公告)日：2008-05-29

申请号：US11987215

申请日：2007-11-28

申请人： Minoru Niigaki ,  Toru Hirohata ,  Kazutoshi Nakajima ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Toru Hirohata ,  Kazutoshi Nakajima ,  Hirofumi Kan

IPC分类号： H01L33/00 ,  H01L31/0336

CPC分类号： H01L33/30 ,  H01L31/03046 ,  H01L31/1035 ,  H01L33/02 ,  H01L33/025 ,  H01L33/305 ,  Y02E10/544

摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).

摘要翻译： 半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合， 做异质结。 第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物 半导体层可以沉积在第一III-V族化合物半导体层上。 第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。