公开(公告)号：US20230327628A1

公开(公告)日：2023-10-12

申请号：US18331577

申请日：2023-06-08

申请人： Akoustis, Inc.

发明人： Dae Ho KIM ,  Frank Zhiquang Bi ,  Mary Winters ,  Abhay Kochhar ,  Emad Mehdizadeh ,  Rohan W. Houlden ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H10N30/02 ,  H03H9/10 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/87 ,  H10N30/00 ,  H03H9/13 ,  H03H9/17 ,  H10N30/85 ,  H10N30/88 ,  H03H9/05 ,  H03H9/54 ,  H03H9/02

CPC分类号： H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US11784634B2

公开(公告)日：2023-10-10

申请号：US17126726

申请日：2020-12-18

申请人： Skyworks Solutions, Inc.

发明人： Akshara Kankar ,  Tomoya Komatsu ,  Abhishek Dey ,  Nan Wu ,  Stephane Richard Marie Wloczysiak

IPC分类号： H03H9/70 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56 ,  H03F3/19 ,  H03H3/02 ,  H04B1/38

CPC分类号： H03H9/706 ,  H03F3/19 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/0542 ,  H03H9/105 ,  H03H9/173 ,  H03H9/176 ,  H03H9/562 ,  H03H9/564 ,  H03H9/568 ,  H03F2200/294 ,  H03F2200/451 ,  H03H2003/021 ,  H04B1/38

摘要： Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

公开(公告)号：US20230275561A1

公开(公告)日：2023-08-31

申请号：US18315211

申请日：2023-05-10

申请人： Shenzhen Newsonic Technologies Co., Ltd.

发明人： Jian WANG

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H9/05

CPC分类号： H03H9/1042 ,  H03H3/02 ,  H03H9/0523

摘要： A method for packaging chips includes: flip-chip bonding a plurality of filter chips to be packaged on a substrate to be packaged; applying a first mold material layer on the filter chips to be packaged; applying a second mold material layer on a side of the first mold material layer away from the filter chip to be packaged, the first mold material layer and the second mold material layer forming a first mold layer; thinning the first mold material layer and the second mold material layer to expose substrates of the filter chips to be packaged, and thinning the substrates of the filter chips to be packaged to a preset thickness; applying a second mold layer on the exposed substrates of the filter chips to be packaged to obtain a mold structure; and cutting the mold structure into a plurality of particle chips.

公开(公告)号：US11689186B2

公开(公告)日：2023-06-27

申请号：US16828675

申请日：2020-03-24

申请人： Akoustis, Inc.

发明人： Ya Shen ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC分类号： H03H9/60 ,  H03H9/56 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/54 ,  H03H9/00 ,  H03H3/02

CPC分类号： H03H9/605 ,  H03H3/02 ,  H03H9/0014 ,  H03H9/0095 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/542 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H9/568 ,  H03H2003/021 ,  H03H2003/025

摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US20190103852A1

公开(公告)日：2019-04-04

申请号：US15720374

申请日：2017-09-29

申请人： Avago Technologies General IP (Singapore) Pte. Ltd.

发明人： Stephen Roy Gilbert ,  Martin Franosch ,  Suresh Sridaran ,  Andrew Thomas Barfknecht ,  Richard C. Ruby

IPC分类号： H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/145 ,  H03H9/25 ,  H03H3/08 ,  H01L23/00 ,  H01L41/047

CPC分类号： H03H9/02897 ,  H01L24/11 ,  H01L24/13 ,  H01L41/0477 ,  H01L41/29 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13564 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2924/014 ,  H01L2924/351 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02102 ,  H03H9/02834 ,  H03H9/0523 ,  H03H9/059 ,  H03H9/1014 ,  H03H9/1071 ,  H03H9/145 ,  H03H9/171 ,  H03H9/25

摘要： An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

公开(公告)号：US20180278236A1

公开(公告)日：2018-09-27

申请号：US15494825

申请日：2017-04-24

申请人： Crystal Waves LABs Limited

发明人： Dror Hurwitz

IPC分类号： H03H9/56 ,  H03H9/205 ,  H01L41/18 ,  H01L41/08 ,  H01L29/04 ,  H01L23/00

CPC分类号： H03H9/205 ,  H01L24/06 ,  H01L24/14 ,  H01L29/045 ,  H01L41/0815 ,  H01L41/183 ,  H01L2224/0401 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/131 ,  H03H9/568 ,  H03H9/587 ,  H03H9/588 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/023

摘要： A filter package comprising an array of piezoelectric films sandwiched between lower electrodes and an array of upper electrodes covered by an array of silicon membranes with cavities thereover: the lower electrode being coupled to an interposer with a first cavity between the lower electrodes and the interposer; the array of silicon membranes having a known thickness and attached over the upper electrodes with an array of upper cavities, each upper cavity between a silicon membrane of the array and a common silicon cover; each upper cavity aligned with a piezoelectric film, an upper electrode and silicon membrane, the upper cavities having side walls comprising SiO2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.

公开(公告)号：US20180219527A1

公开(公告)日：2018-08-02

申请号：US15885276

申请日：2018-01-31

申请人： TAIYO YUDEN CO., LTD.

发明人： Motoi YAMAUCHI

IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/13 ,  H03H9/05 ,  H01L41/187

CPC分类号： H03H9/02897 ,  H01L41/1873 ,  H03H9/05 ,  H03H9/0523 ,  H03H9/0547 ,  H03H9/059 ,  H03H9/13 ,  H03H9/145

摘要： An acoustic wave device includes: a first substrate made of a piezoelectric material; an acoustic wave element located on the first substrate; a bump located on the first substrate; a second substrate located on the first substrate through the bump, the second substrate facing the first substrate across an air gap; and a support layer that is located in at least a part of a periphery of the first substrate, is in contact with a side surface of the first substrate, and has a less linear thermal expansion coefficient than the first substrate.

公开(公告)号：US20180159508A1

公开(公告)日：2018-06-07

申请号：US15818467

申请日：2017-11-20

申请人： TAIYO YUDEN CO., LTD.

发明人： Taisei IRIEDA ,  Tokihiro NISHIHARA

IPC分类号： H03H9/70 ,  H03H9/205 ,  H03H9/56 ,  H03H9/02

CPC分类号： H03H9/706 ,  H03H9/02086 ,  H03H9/0523 ,  H03H9/205 ,  H03H9/564 ,  H03H9/568 ,  H03H9/587 ,  H03H9/605

摘要： A filter includes: a first substrate; first and second piezoelectric thin film resonators located on the first substrate, each of the resonators including first and second electrodes facing each other across a piezoelectric film, a crystal orientation from the first electrode to the second electrode of the piezoelectric film being the same between the resonators, the first electrodes of the resonators connecting to each other in a connection region between resonance regions where the first and second electrodes face each other across the piezoelectric film, the second electrodes of the resonators failing to connect to each other, and an area of the resonance region being approximately the same between the resonators, a second substrate mounting the first substrate across an air gap; and a ground pattern located on the second substrate and not overlapping with the first electrode located in the resonance regions and the connection region.

公开(公告)号：US20180145655A1

公开(公告)日：2018-05-24

申请号：US15796503

申请日：2017-10-27

申请人： TAIYO YUDEN CO., LTD.

发明人： Jun TSUTSUMI ,  Takeshi SAKASHITA

IPC分类号： H03H9/17 ,  H03H9/02 ,  H03H9/56 ,  H03H9/70

CPC分类号： H03H9/175 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/0571 ,  H03H9/173 ,  H03H9/568 ,  H03H9/706 ,  H03H2003/021

摘要： A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate and including a penetration hole penetrating therethrough; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and a protective film covering an upper surface of the piezoelectric film, a side surface of the piezoelectric film, and an inner surface of the penetration hole.

公开(公告)号：US20170272855A1

公开(公告)日：2017-09-21

申请号：US15532454

申请日：2015-10-19

申请人： SNAPTRACK, INC.

发明人： Christian BAUER ,  Hans KRÜEGER ,  Jürgen PORTMANN ,  Alois STELZL ,  Wolfgang PAHL

IPC分类号： H04R1/22 ,  H04R3/00 ,  H04R1/06 ,  H04R23/02 ,  H04R19/00 ,  H04R1/02

CPC分类号： H04R1/222 ,  B81B7/0061 ,  B81B2201/0257 ,  B81B2207/012 ,  B81B2207/098 ,  B81C1/0023 ,  H01L21/568 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/73217 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19105 ,  H03H9/0523 ,  H03H9/058 ,  H04R1/02 ,  H04R1/06 ,  H04R3/007 ,  H04R19/005 ,  H04R19/04 ,  H04R23/02 ,  H04R31/00

摘要： The invention relates to a simple to produce electric component for chips with sensitive component structures. Said component comprises a connection structure and a switching structure on the underside of the chip and a support substrate with at least one polymer layer.