公开(公告)号：US5976715A

公开(公告)日：1999-11-02

申请号：US965682

申请日：1997-11-06

Applicant: Li-Han Chen ,  Sungho Jin ,  Wei Zhu ,  Robert Bruce van Dover

Inventor： Li-Han Chen ,  Sungho Jin ,  Wei Zhu ,  Robert Bruce van Dover

IPC: C22C38/00 ,  C22C38/26 ,  C22C38/28 ,  G11B5/127 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/667 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/32 ,  H01F17/00 ,  H01F41/30 ,  G11B5/66

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11B5/1878 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3906 ,  H01F10/002 ,  H01F10/08 ,  H01F10/13 ,  H01F10/138 ,  H01F10/147 ,  H01F10/3204 ,  H01F10/3254 ,  H01F17/0033 ,  H01F41/302 ,  Y10S428/90 ,  Y10T428/115

Abstract: The invention is embodied in a soft magnetic thin film article comprising an iron--chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron--chromium--nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C.). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.

Abstract translation: 本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。 在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V）， 钼（Mo），铌（Nb）或钨（W）。 制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地， 低温处理（如低于约150℃）。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。

公开(公告)号：US5868910A

公开(公告)日：1999-02-09

申请号：US341317

申请日：1994-11-17

Applicant: Ami Berkowitz

Inventor： Ami Berkowitz

IPC: C23C14/14 ,  C23C14/16 ,  C23C14/24 ,  C23C14/34 ,  C23C14/58 ,  G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F41/18 ,  H01F41/20 ,  H01F41/30 ,  H01L43/10

CPC classification number: C23C14/5806 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/165 ,  C23C14/58 ,  C23C14/584 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3903 ,  H01F41/18 ,  H01F41/301 ,  H01L43/10 ,  G11B2005/3996 ,  Y10T428/1107 ,  Y10T428/12014 ,  Y10T428/12097 ,  Y10T428/12118 ,  Y10T428/12465 ,  Y10T428/12486

Abstract: A single layer film is deposited onto a substrate at room temperature from two sources, one source being a magnetic material, the other being a non-magnetic or weakly-magnetic material. The film is annealed for predetermined time in order to induce phase separation between the magnetic clusters and the non-magnetic matrix, and to form stable clusters of a size such that each magnetic particle, or cluster, comprises a single domain and has no dimensions greater than the mean free path within the particle.

公开(公告)号：US5830584A

公开(公告)日：1998-11-03

申请号：US586571

申请日：1996-01-16

Applicant: Ga-Lane Chen ,  Qixu Chen

Inventor： Ga-Lane Chen ,  Qixu Chen

IPC: G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  H01F10/08 ,  H01F10/16 ,  H01F10/26 ,  G11B5/66

CPC classification number: G11B5/732 ,  G11B5/656 ,  G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12819 ,  Y10T428/12847 ,  Y10T428/12854 ,  Y10T428/12944 ,  Y10T428/24355 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/31678

Abstract: A magnetic recording medium having low medium noise and suitable for high density magnetic recording is produced with a bicrystal cluster magnetic layer on a glass or glass-ceramic substrate. An underlayer which is formed with a (200) crystallographic orientation induces the formation of a bicrystal cluster microstructure in a magnetic alloy layer epitaxially grown on the underlayer.

Abstract translation: 在玻璃或玻璃陶瓷基板上用双晶簇磁性层制造具有低介质噪声且适用于高密度磁记录的磁记录介质。 形成有（200）结晶取向的底层在外底生长在底层上的磁性合金层中形成双晶簇微结构。

公开(公告)号：US5793207A

公开(公告)日：1998-08-11

申请号：US729253

申请日：1996-10-09

Applicant: Hardayal Singh Gill

Inventor： Hardayal Singh Gill

IPC: G01R33/09 ,  G11B5/00 ,  G11B5/012 ,  G11B5/02 ,  G11B5/39 ,  G11B5/48 ,  G11B19/04 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08 ,  H01L43/00 ,  G01R33/02 ,  G11B5/127 ,  H01F1/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/012 ,  G11B5/02 ,  G11B5/3903 ,  G11B5/488 ,  H01F10/3268 ,  G11B19/04 ,  G11B2005/3996 ,  G11B5/3945 ,  H01F10/3286 ,  Y10T428/12465

Abstract: A disk drive system having a spin valve (SV) magnetoresistive (MR) sensor having four leads, two leads for providing sense current to an SV element and two leads for providing current to an asperity compensation layer (ACL). The SV element as well as the hard bias layers are electrically insulated from the ACL by an antiferromagnetic layer made of an insulating material. The voltages developed across the SV element (voltages due to the presence of thermal asperities and voltages due to the presence of data fields) and the ACL (voltages due to the presence of thermal asperities) are applied to the inputs of a differential amplifier for substantial elimination of the thermal asperity signal.

Abstract translation: 具有四个引线的自旋阀（SV）磁阻（MR）传感器的磁盘驱动器系统，用于向SV元件提供感测电流的两个引线和用于向凹凸补偿层（ACL）提供电流的两个引线。 SV元件以及硬偏置层通过由绝缘材料制成的反铁磁性层与ACL电绝缘。 在SV元件上产生的电压（由于存在数据场的存在导致的热凹凸和电压导致的电压）和ACL（由于存在热粗糙度而导致的电压）被施加到差分放大器的输入端，用于实质 消除热凹凸信号。

公开(公告)号：US5759434A

公开(公告)日：1998-06-02

申请号：US684052

申请日：1996-07-22

Applicant: Yuichi Shimakawa ,  Yoshimi Kubo ,  Takashi Manako

Inventor： Yuichi Shimakawa ,  Yoshimi Kubo ,  Takashi Manako

IPC: G01R33/09 ,  G11B5/39 ,  H01F1/34 ,  H01F1/40 ,  H01F10/08 ,  H01F10/12 ,  H01F10/18 ,  H01F10/193 ,  H01F10/32 ,  H01L43/10 ,  G01R33/06

CPC classification number: H01F1/407 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/1933 ,  Y10T428/1107

Abstract: The present invention provides a compound magnetoresistive material having a perovskite related structure and being represented by M1.sub.m M2.sub.n+1 M3.sub.n Z.sub.y, where: M1 is a first metal comprising at least one element selected from the group consisting of Tl, Bi, Pb, and Hg; M2 is a second metal comprising at least one element selected from the group consisting of alkaline earth metals; M3 is a third metal comprising at least one element selected from the group consisting of Mn, Os, and Ru; Z is one selected from the group consisting of oxygen and anions in which some oxygen elements are replaced by Oh, F, B, Cl, Br, S, Se and Te; m is equal to 1 or 2; 1.ltoreq.n.ltoreq.4; y is variable and depends upon a kind of elements constituting the perovskite related structure, a ratio of composition thereof, and synthesis conditions thereof.

Abstract translation: 本发明提供具有钙钛矿相关结构并由M1mM2n + 1M3nZy表示的复合磁阻材料，其中：M1是包含选自由Tl，Bi，Pb和Hg组成的组中的至少一种元素的第一金属; M2是包含选自碱土金属中的至少一种元素的第二金属; M3是包含选自Mn，Os和Ru中的至少一种元素的第三金属; Z是选自氧和阴离子的一种，其中一些氧元素被OH，F，B，Cl，Br，S，Se和Te代替; m等于1或2; 1

公开(公告)号：US5747859A

公开(公告)日：1998-05-05

申请号：US699326

申请日：1996-08-19

Applicant: Koichi Mizushima ,  Teruyuki Kinno ,  Takashi Yamauchi ,  Koichiro Inomata

Inventor： Koichi Mizushima ,  Teruyuki Kinno ,  Takashi Yamauchi ,  Koichiro Inomata

IPC: H01L29/47 ,  G01R33/06 ,  G11B5/33 ,  G11B5/39 ,  G11C11/16 ,  H01F10/08 ,  H01L29/66 ,  H01L29/872 ,  H01L43/08 ,  H01L29/82 ,  G11B5/127 ,  H01L29/84

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/3909 ,  G11B5/3993 ,  G11C11/16 ,  H01L29/66984 ,  H01L43/08 ,  G11B5/332

Abstract: A magnetic sensor has a three-terminal magnetic device consisting of an emitter, a base, and a collector. A semiconductor layer serving as the collector and a magnetic multilayered film serving as the base form a Schottky junction. The magnetic multilayered film has two magnetic films opposing each other with a nonmagnetic film between them. The emitter constructed of a metal film and the base are connected via a tunnel insulating film. The relationship between the magnetization directions in the magnetic films changes in accordance with an external magnetic field, and this changes the value of a current flowing through the magnetic device. The external magnetic field is sensed on the basis of this change in the current value.

公开(公告)号：US5742458A

公开(公告)日：1998-04-21

申请号：US626103

申请日：1996-04-03

Applicant: Fumihito Koike ,  Naoya Hasegawa

Inventor： Fumihito Koike ,  Naoya Hasegawa

IPC: C23C14/08 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G01R33/09

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  C23C14/085 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268 ,  H01L43/10 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1193 ,  Y10T428/12958 ,  Y10T428/26 ,  Y10T428/265

Abstract: A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic layers is pinned by a coercive force increasing layer of .alpha.-Fe.sub.2 O.sub.3 provided adjacent thereto and having a thickness of 200 to 1000 .ANG. so as to increase coercive force of the ferromagnetic layer, and the other ferromagnetic layer has free magnetization so as to produce a change in resistance at a low magnetic field. The present invention also provides a method of producing the giant magnetoresistive material film and a magnetic head provided with the giant magnetoresistive material film.

Abstract translation: 巨磁阻材料薄膜包括NiFe合金或NiFeCo合金的至少两个铁磁层，它们通过Au，Ag，Cu或Cr的非磁性层形成在衬底上，其中至少一个铁磁层的磁化被固定 通过与其相邻设置并具有200〜1000厚度的α-Fe2O3的矫顽力增加层，以增加铁磁层的矫顽力，另一个铁磁层具有自由磁化，从而产生电阻变化 低磁场。 本发明还提供了制造巨磁阻材料膜的方法和设置有巨磁阻材料膜的磁头。

公开(公告)号：US5686193A

公开(公告)日：1997-11-11

申请号：US594359

申请日：1996-01-30

Applicant: John David Westwood

Inventor： John David Westwood

IPC: C23C14/06 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/14 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01F1/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3153 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/145 ,  H01F10/147 ,  H01F10/32 ,  H01F41/302 ,  Y10T428/12465 ,  Y10T428/12674 ,  Y10T428/12736 ,  Y10T428/12757 ,  Y10T428/12764 ,  Y10T428/12951 ,  Y10T428/12958

Abstract: A layered magnetic structure with a seed layer on a substrate and a bulk layer on the seed layer. The seed layer is a gas-doped sendust layer with a thickness of 100-800 .ANG.. The bulk layer is sendust with a thickness of 0.3-10.0 .mu.m. The seed layer and the bulk layer have different weight compositions.

Abstract translation: 在基底上具有种子层的层状磁性结构和种子层上的体层。 种子层是厚度为100-800安培的气体掺杂硅酸盐层。 主体层厚度为0.3-10.0μm。 种子层和本体层具有不同的重量组成。

公开(公告)号：US5668473A

公开(公告)日：1997-09-16

申请号：US481438

申请日：1995-06-19

Applicant: Hugo Van Den Berg

Inventor： Hugo Van Den Berg

IPC: G01R33/09 ,  H01F10/08 ,  H01L43/08 ,  G01R33/06

CPC classification number: B82Y25/00 ,  G01R33/093

Abstract: A magnetoresistive sensor may include a layer system having at least one measuring layer exhibiting a magnetization in the plane of the layer. The magnetization depends inversely in at least one direction of an applied magnetic field. The layer system also includes at least one bias layer having a fixed magnetization in the plane of the layer. The at least one measuring layer and the at least one bias layer are exchange-decoupled from one another by an interlayer. In order to achieve magnetostatic decoupling of the measuring layer and the bias layer, the measuring layer is shorter than the bias layer at least in a direction parallel to the fixed magnetization. The ground state magnetization of the measuring layer and the magnetization of the bias layer are preferably at least approximately orthogonal to each other. In this manner, a magnetoresistive sensor is obtained which has a linear characteristic and maximum sensitivity.

Abstract translation: PCT No.PCT / DE93 / 01205 Sec。 371日期：1995年6月19日 102（e）1995年6月19日PCT PCT 1993年12月16日PCT公布。 出版物WO94 / 15224 PCT 日期1994年7月7日磁阻传感器可以包括具有至少一个在层的平面中表现出磁化的测量层的层系统。 磁化强度在所施加的磁场的至少一个方向上成反比。 层系统还包括在该层的平面中具有固定磁化强度的至少一个偏置层。 所述至少一个测量层和所述至少一个偏压层通过中间层彼此交换分离。 为了实现测量层和偏置层的静磁解耦，测量层至少在平行于固定磁化强度的方向上比偏置层短。 测量层的基态磁化和偏置层的磁化优选至少大致彼此正交。 以这种方式，获得具有线性特性和最大灵敏度的磁阻传感器。

公开(公告)号：US5616370A

公开(公告)日：1997-04-01

申请号：US636460

申请日：1996-04-23

Applicant: Shiho Okuno ,  Susumu Hashimoto ,  Keiichiro Yusu ,  Koichiro Inomata

Inventor： Shiho Okuno ,  Susumu Hashimoto ,  Keiichiro Yusu ,  Koichiro Inomata

IPC: C22C45/02 ,  C23C14/34 ,  G11B5/39 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/26 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  G11B5/852

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/10 ,  G11B5/3903 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1129 ,  Y10T428/12632 ,  Y10T428/12819 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12889 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/24942 ,  Y10T428/265

Abstract: Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.

Abstract translation: 公开了一种人造层叠体，其中交替地层叠铁磁性层和非磁性层，其中沿预定方向将单轴磁各向异性引入到铁磁层中，从而控制电阻率相对于外部磁场变化的梯度。 在形成铁磁层期间，通过在铁磁层的表面施加磁场，将单轴磁各向异性引入铁磁层。