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140 条记录 (耗时 0.026 秒)

    Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same
    22.
    发明申请
    Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same 失效
    长波长磷化铟（InAsP）量子阱活性区及其制备方法

    公开(公告)号：US20040043523A1

    公开(公告)日：2004-03-04

    申请号：US10230895

    申请日：2002-08-29

    发明人： David P. Bour ,  Michael R.T. Tan ,  William H. Perez

    IPC分类号： H01L021/28

    CPC分类号： B82Y20/00 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/0062 ,  H01S5/3434

    摘要： An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.

    摘要翻译： 公开了一种用于长波长发光器件的InAsP有源区及其生长方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟磷（InAsP）膜的生长，形成InAsP的量子阱层，并形成相邻的势垒层 量子阱层，其中在低于520℃的温度下形成量子阱层和势垒层。在低于520℃的温度下形成量子阱层和阻挡层，导致较少的位错 抑制层的松弛。 还公开了包括InAsP量子阱层和InGaP阻挡层的长波长有源区。

    Semiconductor device and its manufacturing method capable of reducing low frequency noise
    24.
    发明申请
    Semiconductor device and its manufacturing method capable of reducing low frequency noise 审中-公开
    能够降低低频噪声的半导体装置及其制造方法

    公开(公告)号：US20030116782A1

    公开(公告)日：2003-06-26

    申请号：US10318065

    申请日：2002-12-13

    申请人： NEC CORPORATION

    发明人： Hiroshi Mizutani

    IPC分类号： H01L021/338 ,  H01L031/0328 ,  H01L021/28

    CPC分类号： H01L29/66143 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/7371 ,  H01L29/7783 ,  H01L29/872

    摘要： In a semiconductor device, a first semiconductor layer is formed on a semiconductor substrate. A second semiconductor layer is formed on a part of the first semiconductor layer, and a third semiconductor layer is formed on a part of the second semiconductor layer. A first electrode is formed on the third semiconductor layer, and a second electrode is formed on the first semiconductor layer in contact with the second semiconductor layer and apart from the semiconductor layer, thus forming a diode.

    摘要翻译： 在半导体器件中，在半导体衬底上形成第一半导体层。 在第一半导体层的一部分上形成第二半导体层，在第二半导体层的一部分上形成第三半导体层。 第一电极形成在第三半导体层上，并且第二电极形成在与第二半导体层接触并且与半导体层分离的第一半导体层上，从而形成二极管。

    Method and device for reducing the contact resistance in organic field-effect transistors by embedding nanoparticles to produce field boosting
    26.
    发明申请
    Method and device for reducing the contact resistance in organic field-effect transistors by embedding nanoparticles to produce field boosting 失效
    通过嵌入纳米颗粒来产生场增压来降低有机场效应晶体管中的接触电阻的方法和装置

    公开(公告)号：US20030080426A1

    公开(公告)日：2003-05-01

    申请号：US10283883

    申请日：2002-10-30

    发明人： Hagen Klauk ,  Gunter Schmid

    IPC分类号： H01L023/48 ,  H01L021/28 ,  H01L029/40

    CPC分类号： H01L51/0545 ,  H01L51/0021 ,  H01L51/0541 ,  H01L51/105

    摘要： A method for selectively doping an organic semiconductor 1material in the region of a contact area 0.1formed between a contact and the organic semiconductor material disposed thereon includes introducing the dopant with the aid of nanoparticles, the nanoparticles being disposed in a manner adjoining the contact area and, as a result, only a very narrow region of the organic semiconductor material being doped. The field increase effected by the nanoparticles results in a further reduction of the contact resistance.

    摘要翻译： 在接触区域和设置在其上的有机半导体材料之间形成的接触区域0.1的区域中有选择地掺杂有机半导体1材料的方法包括借助纳米颗粒引入掺杂剂，纳米颗粒以与接触区域相邻的方式设置， 结果，仅掺杂有机半导体材料的非常窄的区域。 由纳米颗粒引起的场增加导致接触电阻的进一步降低。

    Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
    28.
    发明申请
    Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate 失效
    氮化物半导体衬底及其制造方法以及使用氮化物半导体衬底的氮化物半导体器件

    公开(公告)号：US20030032288A1

    公开(公告)日：2003-02-13

    申请号：US10260442

    申请日：2002-10-01

    申请人： Nichia Corporation

    发明人： Tokuya Kozaki ,  Hiroyuki Kiyoku ,  Kazuyuki Chocho ,  Hitoshi Maegawa

    IPC分类号： H01L021/28 ,  H01L021/44 ,  H01L021/302 ,  H01L021/461

    CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01S5/0217 ,  H01S5/3063 ,  H01S5/32341 ,  H01S2304/12

    摘要： A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer. A protective layer having a periodically arranged stripe-like, grid-like or island-like apertures is formed on the supporting substrate. The first nitride semiconductor layer is laterally grown from the exposed portion of the substrate. The growth is stopped before the first nitride semiconductor layer covers the supporting substrate. Thus, the first nitride semiconductor layer has a periodical T-shaped cross-section. Then, the protective layer is removed and the second nitride semiconductor layer is grown from the top and side surface of the first nitride semiconductor layer to cover the substrate.

    摘要翻译： 一种氮化物半导体衬底，包括：（a）支撑衬底，（b）具有周期性T形横截面的第一氮化物半导体层，其从所述支撑上的周期性排列的带状，格子状或岛状部分生长 衬底，以及（c）覆盖所述支撑衬底的第二氮化物半导体衬底，其从所述第一氮化物半导体层的顶表面和侧表面生长，其中在所述第二氮化物半导体层下方形成腔。 在支撑基板上形成具有周期性布置的条状，格子状或岛状孔的保护层。 第一氮化物半导体层从衬底的暴露部分横向生长。 在第一氮化物半导体层覆盖支撑衬底之前停止生长。 因此，第一氮化物半导体层具有周期性的T形横截面。 然后，去除保护层，并且从第一氮化物半导体层的顶表面和侧表面生长第二氮化物半导体层以覆盖衬底。

    Group III nitride compound semiconductor element and method for producing the same
    30.
    发明申请
    Group III nitride compound semiconductor element and method for producing the same 失效
    III族氮化物化合物半导体元件及其制造方法

    公开(公告)号：US20020197841A1

    公开(公告)日：2002-12-26

    申请号：US10160288

    申请日：2002-06-04

    发明人： Seiji Nagai ,  Masayoshi Koike ,  Kazuyoshi Tomita

    IPC分类号： H01L021/28 ,  H01L021/3205

    CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/007

    摘要： An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed from SiO2 film is provided on the Si(111) plane of an n-type silicon substrate, and a window portion (crystal growth region) in the shape of an equilateral triangle having a side of approximately 300 nullm is formed through the mask. The three sides of the equilateral triangle are composed of three edges; each edge defined by the (111) plane and another crystal plane that is cleavable. Subsequently, a multi-layer structure of semiconductor crystals in an LED is formed through crystal growth of a Group III nitride compound semiconductor. Thus, limiting the area of one crystal growth region to a considerably small area weakens a stress applied to a semiconductor layer, thereby readily producing semiconductor elements having excellent crystallinity. In addition, semiconductor elements can be arranged in a semiconductor wafer at high packing density without loss, and each side of these semiconductor elements can be readily arranged in a line on a semiconductor wafer, thereby enhancing quality, yield, productivity, etc. of semiconductor elements.

    摘要翻译： 本发明的目的是高效率地制造由没有裂纹和位错密度低且具有优异特性的高品质结晶半导体形成的半导体元件。 具体地，在n型硅衬底的Si（111）面上设置由SiO 2膜形成的掩模，并且形成具有约300μm侧面的等边三角形形状的窗口部分（晶体生长区域） 通过面具。 等边三角形的三面由三边组成， 每个边缘由（111）面和另一个可切割的晶体平面限定。 随后，通过III族氮化物化合物半导体的晶体生长，形成LED中的半导体晶体的多层结构。 因此，将一个晶体生长区域的面积限制在相当小的面积上，削弱施加到半导体层的应力，从而容易地制造具有优异结晶度的半导体元件。 此外，半导体元件可以以高封装密度无损耗地布置在半导体晶片中，并且这些半导体元件的每一侧可以容易地布置在半导体晶片上的线上，从而提高半导体的质量，产量，生产率等 元素。