Flexible secondary battery
    313.
    发明授权

    公开(公告)号:US09991520B2

    公开(公告)日:2018-06-05

    申请号:US15299638

    申请日:2016-10-21

    Abstract: A flexible secondary battery includes an exterior member having an accommodation space inside, a cathode collector and an anode collector located in the accommodation space and spaced apart from each other, a cathode active material portion on the cathode collector, and an anode active material portion on the anode collector. The cathode collector includes a first connection portion extending in a first direction and a plurality of first leg portions protruding from the first connection portion in a second direction different from the first direction. The anode collector includes a second connection portion parallel to the first connection portion and a plurality of second leg portions protruding from the second connection portion toward the first connection portion. The first leg portions and the second leg portions are alternately arranged between the first connection portion and the second connection portion. The cathode active material portion is located only on the first leg portions. The anode active material portion is located on the second connection portion and the second leg portions.

    Method for manufacturing thin film solar cell

    公开(公告)号:US09941423B2

    公开(公告)日:2018-04-10

    申请号:US14803843

    申请日:2015-07-20

    Abstract: A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.

    SEMICONDUTOR DEVICE INCLUDING STRAINED GERMANIUM AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20180076084A1

    公开(公告)日:2018-03-15

    申请号:US15416727

    申请日:2017-01-26

    Abstract: A method for manufacturing a semiconductor device includes: forming a sacrificial layer on a first substrate, the sacrificial layer being made of a material whose lattice constant is different from that of germanium (Ge) by a preset threshold or below; forming a germanium (Ge) layer on the sacrificial layer; forming an insulation layer on a second substrate; bonding the germanium (Ge) layer onto the insulation layer; and removing the sacrificial layer and the first substrate by etching the sacrificial layer in a state where the germanium (Ge) layer is bonded to the insulation layer. In this method, a germanium-on-insulator (GeOI) structure having various surface orientations may be formed by means of epitaxial lift-off (ELO), and a strain may be applied to the germanium (Ge) layer using a lattice constant of the sacrificial layer.

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