METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS
    31.
    发明申请
    METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS 有权
    用于形成用于碲化镉光伏电池的反接触电极的方法

    公开(公告)号:US20110259423A1

    公开(公告)日:2011-10-27

    申请号:US12765225

    申请日:2010-04-22

    Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

    Abstract translation: 提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。 该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料,使得活化的材料蚀刻半导体层的表面。 该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

    PROCESS FOR MAKING THIN FILM SOLAR CELL
    33.
    发明申请
    PROCESS FOR MAKING THIN FILM SOLAR CELL 审中-公开
    制造薄膜太阳能电池的方法

    公开(公告)号:US20110143489A1

    公开(公告)日:2011-06-16

    申请号:US12635767

    申请日:2009-12-11

    Abstract: A process for making a component of a thin film solar cell is provided. The process includes steps of making the component in the following sequence: depositing an absorber layer on a transparent substrate, depositing a back-contact layer on the absorber layer and activating the absorber layer. The absorber layer comprises tellurium. A process for making a thin film solar cell is also presented.

    Abstract translation: 提供了制造薄膜太阳能电池组件的方法。 该方法包括以下列顺序制备该组分的步骤:在透明基底上沉积吸收层,在吸收层上沉积背接触层并活化吸收层。 吸收层包括碲。 还提出了制造薄膜太阳能电池的方法。

    Systems and methods of intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices
    34.
    发明授权
    Systems and methods of intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices 有权
    用于薄膜光伏器件混合硫化镉层和碲化镉层的系统和方法

    公开(公告)号:US07939363B1

    公开(公告)日:2011-05-10

    申请号:US12913296

    申请日:2010-10-27

    Abstract: A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is also provided.

    Abstract translation: 提供了具有混合层的碲化镉基薄膜光伏器件的制造方法。 该方法可以包括将衬底引入沉积室,其中窗口层(例如,硫化镉层)在衬底的表面上。 可以向沉积室供应含硫气体。 此外,源蒸气可以供应到沉积室,其中源材料包括碲化镉。 含硫气体和源蒸气可以存在于沉积室内以在窗口层上形成混合层。 在一个具体实施方案中,例如,混合层通常可以具有增加的碲浓度和降低远离窗口层的硫浓度。 还提供了用于在光伏(PV)模块基板上顺序沉积混合薄膜层和升华的源材料的装置。

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