公开(公告)号：US07884392B2

公开(公告)日：2011-02-08

申请号：US12362210

申请日：2009-01-29

Applicant: Hyuek-Jae Lee ,  Tae-Je Cho ,  Yong-Hwan Kwon ,  Un-Byoung Kang ,  Chung-Sun Lee ,  Woon-Seong Kwon ,  Hyung-Sun Jang

Inventor： Hyuek-Jae Lee ,  Tae-Je Cho ,  Yong-Hwan Kwon ,  Un-Byoung Kang ,  Chung-Sun Lee ,  Woon-Seong Kwon ,  Hyung-Sun Jang

IPC: H01L31/0328

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05023 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05099

Abstract: One embodiment exemplarily described herein can be characterized as an image sensor including a substrate having a front surface and a rear surface; a photoelectric converting portion on the front surface of the substrate; a through via extending through the substrate, wherein the through via is electrically connected to the photoelectric converting portion; an external connection terminal on the rear surface of the substrate, wherein the external connection terminal is connected to the through via; and a light shading layer formed on a portion of the rear surface of the substrate, wherein the light shading layer is substantially opaque with respect to an external light. In some embodiments, the portion of the rear surface of the substrate on which the light shading layer is formed is not overlapped by the through via or the external connection terminal.

Abstract translation: 本文示例性描述的一个实施例可以被表征为包括具有前表面和后表面的基板的图像传感器; 在所述基板的前表面上的光电转换部; 贯穿所述基板延伸的通孔，其中所述通孔电连接到所述光电转换部分; 在所述基板的后表面上的外部连接端子，其中所述外部连接端子连接到所述通孔; 以及形成在所述基板的后表面的一部分上的遮光层，其中所述遮光层相对于外部光基本上是不透明的。 在一些实施例中，其上形成有遮光层的基板的后表面的部分不与通孔或外部连接端子重叠。

公开(公告)号：US20100019338A1

公开(公告)日：2010-01-28

申请号：US12574906

申请日：2009-10-07

Applicant: Woon-Seong KWON ,  Yong-Hwan KWON ,  Un-Byoung KANG ,  Chung-Sun LEE ,  Hyung-Sun JANG

Inventor： Woon-Seong KWON ,  Yong-Hwan KWON ,  Un-Byoung KANG ,  Chung-Sun LEE ,  Hyung-Sun JANG

IPC: H01L25/04

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06524 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A stack type semiconductor chip package includes a first wafer mold, a protection substrate, and a second wafer mold that are stacked in a wafer level process. The first wafer mold includes a first chip having first pads and a first mold layer encapsulating the first chip. The protection substrate is placed on the first wafer mold, is mechanically bonded with the first wafer mold using a first adhesive layer, and includes wiring layers facing the first pads. The second wafer mold is placed under the first wafer mold, is mechanically bonded with the first wafer mold using a second adhesive layer, and includes a second chip having second pads, and a second mold layer encapsulating the second chip. First vias electrically connect the wiring layers of the protection substrate with the second pads. Second vias electrically connect the wiring layers of the protection substrate with external connection terminals.

Abstract translation: 堆叠型半导体芯片封装包括在晶片级工艺中堆叠的第一晶片模具，保护基板和第二晶片模具。 第一晶片模具包括具有第一焊盘的第一芯片和封装第一芯片的第一模具层。 保护基板被放置在第一晶片模具上，使用第一粘合剂层与第一晶片模具机械结合，并且包括面向第一焊盘的布线层。 第二晶片模具放置在第一晶片模具下面，使用第二粘合剂层与第一晶片模具机械结合，并且包括具有第二焊盘的第二芯片和封装第二芯片的第二模具层。 第一通孔将保护衬底的布线层与第二衬垫电连接。 第二通孔将保护基板的布线层与外部连接端子电连接。

公开(公告)号：US20090200632A1

公开(公告)日：2009-08-13

申请号：US12362210

申请日：2009-01-29

Applicant: Hyuek-Jae LEE ,  Tae-Je CHO ,  Yong-Hwan KWON ,  Un-Byoung KANG ,  Chung-Sun LEE ,  Woon-Seong KWON ,  Hyung-Sun JANG

Inventor： Hyuek-Jae LEE ,  Tae-Je CHO ,  Yong-Hwan KWON ,  Un-Byoung KANG ,  Chung-Sun LEE ,  Woon-Seong KWON ,  Hyung-Sun JANG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05023 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05099

Abstract: One embodiment exemplarily described herein can be characterized as an image sensor including a substrate having a front surface and a rear surface; a photoelectric converting portion on the front surface of the substrate; a through via extending through the substrate, wherein the through via is electrically connected to the photoelectric converting portion; an external connection terminal on the rear surface of the substrate, wherein the external connection terminal is connected to the through via; and a light shading layer formed on a portion of the rear surface of the substrate, wherein the light shading layer is substantially opaque with respect to an external light. In some embodiments, the portion of the rear surface of the substrate on which the light shading layer is formed is not overlapped by the through via or the external connection terminal.

Abstract translation: 本文示例性描述的一个实施例可以被表征为包括具有前表面和后表面的基板的图像传感器; 在所述基板的前表面上的光电转换部; 贯穿所述基板延伸的通孔，其中所述通孔电连接到所述光电转换部分; 在所述基板的后表面上的外部连接端子，其中所述外部连接端子连接到所述通孔; 以及形成在所述基板的后表面的一部分上的遮光层，其中所述遮光层相对于外部光基本上是不透明的。 在一些实施例中，其上形成有遮光层的基板的后表面的部分不与通孔或外部连接端子重叠。

公开(公告)号：US07495317B2

公开(公告)日：2009-02-24

申请号：US11387848

申请日：2006-03-24

Applicant: Eun-Seok Song ,  Un-Byoung Kang ,  Si-Hoon Lee

Inventor： Eun-Seok Song ,  Un-Byoung Kang ,  Si-Hoon Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H04B3/28 ,  H05K9/00 ,  G11B33/14

CPC classification number: H01L24/13 ,  H01L23/5225 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00014

Abstract: A semiconductor device comprises at the wafer level one or more ferrite structures adapted to dampen high frequency noise potentially apparent at signal lines and termination points within the semiconductor device. Related methods of forming said ferrite structures are also disclosed.

Abstract translation: 半导体器件包括在晶片级上的一个或多个铁氧体结构，其适于抑制在半导体器件内的信号线和终端点处潜在地显现的高频噪声。 还公开了形成所述铁氧体结构的相关方法。

公开(公告)号：US20080083983A1

公开(公告)日：2008-04-10

申请号：US11850184

申请日：2007-09-05

Applicant: Hyang-sun JANG ,  Yong-hwan KWON ,  Un-byoung KANG ,  Chung-sun Lee ,  Woon-seong KWON

Inventor： Hyang-sun JANG ,  Yong-hwan KWON ,  Un-byoung KANG ,  Chung-sun Lee ,  Woon-seong KWON

IPC: H01L23/48 ,  H01L21/44

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/1147 ,  H01L2224/13144 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/013

Abstract: In one aspect, a bump electrode of a semiconductor device is formed by providing a substrate including a pad electrode, forming a seed layer over the pad electrode, and forming a mask layer over the seed layer which includes an opening aligned over the pad electrode. A barrier plating layer is electroplated within the opening over the seed layer, and a bump plating layer is electroplated over the barrier plating layer. The mask layer is removed, and the seed layer is etched using the bump plating layer as a mask.

Abstract translation: 一方面，通过提供包括焊盘电极的基板，在焊盘电极上形成种子层，以及在种子层上形成掩模层，形成半导体器件的突起电极，该掩模层包括在焊盘电极上对准的开口。 在种子层的开口内电镀阻挡层，在阻挡镀层上电镀凸点镀层。 去除掩模层，并使用凸块镀层作为掩模蚀刻种子层。

公开(公告)号：US20080054456A1

公开(公告)日：2008-03-06

申请号：US11828409

申请日：2007-07-26

Applicant: Un-byoung KANG ,  Yong-hwan KWON ,  Chung-sun LEE ,  Woon-seong KWON ,  Hyung-sun JANG

Inventor： Un-byoung KANG ,  Yong-hwan KWON ,  Chung-sun LEE ,  Woon-seong KWON ,  Hyung-sun JANG

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L21/563 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/1147 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/73203 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A semiconductor package includes a semiconductor chip operatively attached to a conductive lead of a film circuit substrate by an indium-containing solder material and a silver-containing bump electrode, where the solder material is interposed between the conductive lead and the bump electrode.

Abstract translation: 半导体封装包括通过含铟焊料材料和含银凸点电极可操作地附接到膜电路基板的导电引线的半导体芯片，其中焊料材料插入在导电引线和凸块电极之间。

公开(公告)号：US20070023902A1

公开(公告)日：2007-02-01

申请号：US11387848

申请日：2006-03-24

Applicant: Eun-Seok Song ,  Un-Byoung Kang ,  Si-Hoon Lee

Inventor： Eun-Seok Song ,  Un-Byoung Kang ,  Si-Hoon Lee

IPC: H01L23/48

CPC classification number: H01L24/13 ,  H01L23/5225 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00014

Abstract: A semiconductor device comprises at the wafer level one or more ferrite structures adapted to dampen high frequency noise potentially apparent at signal lines and termination points within the semiconductor device. Related methods of forming said ferrite structures are also disclosed.

Abstract translation: 半导体器件包括在晶片级上的一个或多个铁氧体结构，其适于抑制在半导体器件内的信号线和终端点处潜在地显现的高频噪声。 还公开了形成所述铁氧体结构的相关方法。

公开(公告)号：US20060213251A1

公开(公告)日：2006-09-28

申请号：US11089311

申请日：2005-03-24

Applicant: Andrew Rinzler ,  Jennifer Sippel-Oakley ,  Byoung Kang ,  Hung-Ta Wang ,  Fan Ren ,  Stephen Pearton

Inventor： Andrew Rinzler ,  Jennifer Sippel-Oakley ,  Byoung Kang ,  Hung-Ta Wang ,  Fan Ren ,  Stephen Pearton

IPC: G01N7/00

CPC classification number: G01N27/127 ,  G01N33/005

Abstract: A multi-layer H2 sensor includes a carbon nanotube layer, and a ultra-thin metal or metal alloy layer in contact with the nanotube layer. The ultra-thin metal or metal alloy layer is preferably from 10 to 50 angstroms thick. An electrical resistance of the layered sensor increases upon exposure to H2 and can provide detection of hydrogen gas (H2) down to at least 10 ppm, The metal or metal alloy layer is preferably selected from the group consisting of Ni, Pd and Pt, or mixtures thereof. Multi-layered sensors and can be conveniently operated at room temperature.

Abstract translation: 多层H 2传感器包括碳纳米管层和与纳米管层接触的超薄金属或金属合金层。 超薄金属或金属合金层的厚度优选为10〜50埃。 层状传感器的电阻在暴露于H 2 2时增加，并且可以将氢气（H 2 O 2）的检测降低至至少10ppm。金属或金属合金 层优选选自Ni，Pd和Pt，或其混合物。 多层传感器，可方便地在室温下运行。

公开(公告)号：US20060126949A1

公开(公告)日：2006-06-15

申请号：US11302748

申请日：2005-12-13

Applicant: Jin Lee ,  Min Kim ,  Byoung Kang

Inventor： Jin Lee ,  Min Kim ,  Byoung Kang

IPC: G06K9/36

CPC classification number: H04N19/90 ,  H03M7/3084

Abstract: A method of coding and decoding a still picture is provided. The method of coding and decoding a still image includes: constructing a coded data configured with a region consisting of a first information expressible in bit and a second information expressible in byte by using separate output buffers; and separately allocating a first output buffer for the first information and a second output buffer for the second information, and decoding the coded data.

Abstract translation: 提供了一种对静止图像进行编码和解码的方法。 对静止图像进行编码和解码的方法包括：通过使用单独的输出缓冲器来构造配置有由可表示位的第一信息和以字节表示的第二信息的区域构成的编码数据; 并分别分配用于第一信息的第一输出缓冲器和用于第二信息的第二输出缓冲器，并对编码数据进行解码。

公开(公告)号：US20060073383A1

公开(公告)日：2006-04-06

申请号：US11194058

申请日：2005-07-28

Applicant: Won Han ,  Byoung Kang ,  Joong Kim ,  Chang Kim ,  Seung Lee ,  Jae Bang

Inventor： Won Han ,  Byoung Kang ,  Joong Kim ,  Chang Kim ,  Seung Lee ,  Jae Bang

IPC: H01M2/02 ,  B32B27/36 ,  B32B27/08 ,  B32B15/08

CPC classification number: H01M10/4257 ,  B32B7/12 ,  B32B15/085 ,  B32B15/09 ,  B32B15/18 ,  B32B27/08 ,  B32B27/18 ,  B32B27/32 ,  B32B27/36 ,  B32B2264/0207 ,  B32B2307/558 ,  B32B2307/734 ,  B32B2439/46 ,  B32B2457/10 ,  B32B2553/02 ,  H01M2/0207 ,  H01M2/0275 ,  H01M2/0277 ,  H01M2/0285 ,  H01M2/0287 ,  H01M2/0295 ,  H01M10/0525 ,  H01M10/0565 ,  Y10T428/31692 ,  Y10T428/31797

Abstract: A battery sheath having enough mechanical strength to stably protect a battery from external impact is provided. The battery sheath also has reduced thickness, thereby increasing battery capacity. In addition, the battery sheath suppresses swelling, thereby preventing battery deformation. The battery sheath includes a base layer having a first surface and a second surface opposite the first surface. A first adhesive is applied to the first surface of the base layer to a predetermined thickness. A CPP layer is applied to the first adhesive to a predetermined thickness. A PET layer is laminated at high temperature on the second surface of the base layer to a predetermined thickness.

Abstract translation: 提供了具有足够的机械强度以稳定地保护电池免受外部冲击的电池护套。 电池护套也具有减小的厚度，从而增加电池容量。 此外，电池护套抑制膨胀，防止电池变形。 电池护套包括具有第一表面和与第一表面相对的第二表面的基底层。 将第一粘合剂施加到基层的第一表面至预定厚度。 将CPP层施加到第一粘合剂到预定厚度。 PET层在基层的第二表面上以高温层压到预定厚度。